• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.33-36
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• 1994

The characteristics of the nonvolatile MONOS memory devices as the nitride thickness is scaled down while maintaining constant tunneling oxide thickness and blocking oxide thickness have been investigated in order to obtain the 5V-programmable E$^2$PROM. We have found that 1V memory window for a 5V programming voltage and 10 year data retention can be achieved in the scaled MONOS memory devices with a 50 blocking oxide, a 57 nitride and a 19 tunneling oxide.

• Journal of the Korean institute of surface engineering
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• v.35 no.4
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• pp.193-198
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• 2002

Alloys of XD45 (Ti45A12Nb2Mn-0.8vol%TiB$_2$) and XD47 (Ti47A12Nb2Mn-0.8vol%TiB$_2$) were oxidized between 800 and $1000^{\circ}C$ in air, and their oxidation characteristics were studied. The oxide scales consisted primarily of an outer $TiO_2$ layer, an intermediate $Al_2$$O_3$-rich layer, and an inner mixed layer of ($TiO_2$+$Al_2$$O_3$). Nb tended to present at the lower part of the oxide scale, whereas Mn at the upper part of the oxide scale. The Pt marker tests indicated that the outer oxide layer grew primarily by the outward diffusion of Ti and Mn, and the inner mixed layer by the inward transport of oxygen.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.1-1
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• 2011

We developed a new generalized synthetic procedure, called as "heat-up process," to produce uniform-sized nanocrystals of many transition metals and oxides without a size selection process. We were able to synthesize uniform magnetite nanocrystals as much as 1 kilogram-scale from the thermolysis of Fe-oleate complex. Clever combination of different nanoscale materials will lead to the development of multifunctional nano-biomedical platforms for simultaneous targeted delivery, fast diagnosis, and efficient therapy. In this presentation, I would like to present some of our group's recent results on the designed fabrication of multifunctional nanostructured materials based on uniform-sized magnetite nanoparticles and their medical applications. Uniform ultrasmall iron oxide nanoparticles of <3 nm were synthesized by thermal decomposition of iron-oleate complex in the presence of oleyl alcohol. These ultrasmall iron oxide nanoparticles exhibited good T1 contrast effect. In in vivo T1 weighted blood pool magnetic resonance imaging (MRI), iron oxide nanoparticles showed longer circulation time than commercial gadolinium complex, enabling high resolution imaging. We used 80 nm-sized ferrimagnetic iron oxide nanocrystals for T2 MRI contrast agent for tracking transplanted pancreatic islet cells and single-cell MR imaging. We reported on the fabrication of monodisperse magnetite nanoparticles immobilized with uniform pore-sized mesoporous silica spheres for simultaneous MRI, fluorescence imaging, and drug delivery. We synthesized hollow magnetite nanocapsules and used them for both the MRI contrast agent and magnetic guided drug delivery vehicle.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.32-32
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• 2009

Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.

• Journal of the Korean Society of Propulsion Engineers
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• v.24 no.3
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• pp.12-17
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• 2020

The mechanical properties of the propellant with yellow iron oxide were slightly increased compared to the propellant with red iron oxide. The propellant with yellow iron oxide used two types of AP. As the ratio of small particles of AP increased, the burning rate increased. The propellant may be applied to the propellant under operating conditions of 17.5 mm/sec or less having a pressure index of 0.5. The burning rate downs in the mixer scale-up. The stress at maximum load of propellant decreased and the strain at maximum load increased in the mixer scale-up. The yellow iron oxide did not affect the adhesive force between the insulation/liner/propellant.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.41-44
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• 2000

Ultra large scale integrated circuit(ULSI) & complementary metal oxide semiconductor(CMOS) circuits require gate electrode materials such as meta] silicides, titanium-silicide for gate oxides. Many previous authors have researched the improvements sub-micron gate oxide quality. However, little has been done on the electrical quality and reliability of ultra thin gates. In this research, we recommend novel shallow trench isolation structure and two step TiSi$_{2}$ formation for sub 0.1${\mu}{\textrm}{m}$ gate oxide.

• Journal of the Korean institute of surface engineering
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• v.34 no.1
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• pp.25-32
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• 2001

$TiB_2$ ceramics were oxidized at 800, 900 and $1000^{\circ}C$ in air for 40 hr, and their oxidation property was investigated using TGA, XRD, SEM and EPMA. The oxidation resistance decreased with an increase in oxidation temperature. The scale was essentially composed of $TiO_2$ only. $B_2$$O_3$ formed during oxidation escaped from the $TiO_2$ oxide scale owing to its high vapor pressure. This made the oxide scale highly porous and thick. The oxidation reaction was mainly governed by the inward transport of oxygen.$ TiO_2$ existing at the outermost scale grew into peculiarly shaped blades, as the reaction progressed.

• Korean Journal of Metals and Materials
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• v.50 no.8
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• pp.599-603
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• 2012

The microstructure of a hammer scale excavated from the Bogam-ri was examined in an effort to understand the iron technologies applied in the manufacturing of an iron forging process technology. The microstructures of oxide layer in the hammer scale were found to have crucial information about the ancient iron forging process treatment. The microstructure observed in the hammer scale can be distinguished by the forging process. First, the microstructure of the oxide layer in the hammer scale created by the forging process is Wstite (FeO) in the form of leaves. Latterly, the microstructure of the $W{\ddot{u}}stite$(FeO) in the hammer scale is observed to be in the form of a flat shape formed by a repeating forging process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.1
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• pp.1-7
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• 2007

In this paper, two kinds of initial oxidation methods i.e., SLTO(Slow Low Temperature Oxidation: $700^{\circ}C$) and RTO(Rapid Thermal Oxidation: $850^{\circ}C$) are applied prior to the plasma nitridation for ultra thin oxide of RPNO (Remote Plasma Nitrided Oxide). It is observed that SLTO has superior characteristics to RTO such as lower SS(Sub-threshold Slope) and improved Ion-Ioff characteristics. Low frequency noise characteristics of SLTO also showed better than RTO both in linear and saturation regime. It is shown that flicker noise is dominated by carrier number fluctuation in the channel region. Therefore, SLTO is promising for nano-scale CMOS technology with ultra thin gate oxide.

• Korean Journal of Metals and Materials
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• v.46 no.10
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• pp.652-661
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• 2008

Reduction of NOx in emission gas, improvement of engine efficiency, and extension of warranty period has made demands for developing materials more corrosively resistant to the inner-muffler environments or predicting the lifetime of materials used in muffler more precisely. The corrosion inside muffler has been explained with condensate corrosion mainly though thermal oxidation experiences prior to condensate corrosion. Hence, the aim of this study is to describe how the thermal oxidation affects the corrosion of stainless steel exposed to the inner-muffler environments. Auger electron spectroscopy and electrochemical tests were employed to analyze oxide scale and to evaluate corrosion resistance, respectively. Thermal oxidation has different role of condensate corrosion depending on the temperature: inhibiting condensate corrosion below $380^{\circ}C$ and enhancing condensate corrosion above $380^{\circ}C$. The low temperature oxidation causes to form compact oxide layer functioning a barrier for penetrating condensate into a matrix. Although though thermal oxidation caused chromium-depleted layer between oxide layer and matrix, the enhancement of the condensate corrosion in high temperature oxidation resulted from corrosion-induced crevice formed by oxide scale rather than corrosion in chromium-depleted layer. It was proved by aids of anodic polarization tests and measurements of pitting corrosion potentials. By the study, the role of high temperature oxidation layer affecting the condensate corrosion of stainless steels used as muffler materials was well understood.