• 대한전자공학회논문지SD
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• 제40권8호
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• pp.560-564
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• 2003

본 논문에서는 RTP(rapid thermal process)를 이용한 새로운 산화방법을 고안했으며, 이는 짧은 시간에 다공질 실리콘을 산화시킴으로써 이 기술은 여타 방법에 비해 경제적이고 간편한 방법으로 짧은 시간에 두꺼운 산화막을 성장시킬 수 있는 장점을 가지고 있다. 먼저, 양극반응을 통해 PSL(porous silicon layer)을 형성한 후 이를 저온 산화시킨 후에 급속 열처리 산화공정(RTO: rapid thermal oxidation)를 이용해서 OPSL(oxidized porous silicon layer)을 제조하고, 그 물성 및 전기적 특성을 조사하여, 열 산화로 제작된 OPSL과 그 특성을 비교하였다. 시편의 절연 파괴전압은 약 3.9 MV/cm의 값을 보여 벌크 산화막보다는 적은 값이지만 절연 재료로서는 충분한 값이고, 누설전류는 0 ∼ 50 V의 인가 전압에서 100 ∼ 500 ㎀의 값을 보였다. 그리고, XPS 결과는 RTO 공정 추가가 저온 산화막의 완전 산화에 크게 기여함을 확인하였으며, 저온 산화막의 표면 및 내부에서도 산화반응이 완전하게 이루어졌음을 확인하였다. 이 결과로부터 저온 OPSL을 제조할 때, RTO 공정이 OPSL의 산화 및 치밀화(densification)의 증가에 크게 기여함을 알 수 있었다. 따라서, 이의 방법으로 제조된 OPSL은 저온을 요구하는 공정에서 소자의 절연막, 전기적인 분리층 그리고 실리콘 고주파용 기판 등으로 활용될 수 있을 것으로 보인다.

• 한국분말재료학회지
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• 제28권5호
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• pp.396-402
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• 2021

Stainless steel, a type of steel used for high-temperature parts, may cause damage when exposed to high temperatures, requiring additional coatings. In particular, the Cr₂O₃ product layer is unstable at 1000℃ and higher temperatures; therefore, it is necessary to improve the oxidation resistance. In this study, an aluminide (Fe₂Al₅ and FeAl₃) coating layer was formed on the surface of STS 630 specimens through Al diffusion coatings from 500℃ to 700℃ for up to 25 h. Because the coating layers of Fe₂Al₅ and FeAl₃ could not withstand temperatures above 1200℃, an Al₂O₃ coating layer is deposited on the surface through static oxidation treatment at 500℃ for 10 h. To confirm the ablation resistance of the resulting coating layer, dynamic flame exposure tests were conducted at 1350℃ for 5-15 min. Excellent oxidation resistance is observed in the coated base material beneath the aluminide layer. The conditions of the flame tests and coating are discussed in terms of microstructural variations.

• 한국재료학회지
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• 제28권6호
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• pp.361-364
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• 2018

Binary Ti-Al alloys below 51.0 mass%Al content exhibit a breakaway, transferring from parabolic to linear rate law. The second $Al_2O_3$ layer might have some protectiveness before breakaway. Ti-63.1 mass%Al oxidized at 1173 K under parabolic law. Breakaway oxidation is observed in every alloy, except for Ti-63.1 mass%Al. After breakaway, oxidation rates of the binary TiAl alloys below 34.5 mass%Al obey almost linear kinetics. The corrosion rate of Ti-63.1 mass%Al appears to be almost parabolic. As content greater than 63.0 mass% is found to be necessary to form a protective alumina film. Addition of Mo improves the oxidation resistance dramatically. No breakaway is observed at 1123 K, and breakaway is delayed by Mo addition at 1173 K. At 1123 K, no breakaway, but a parabolic increase in mass gain, are observed in the Mo-added TiAl alloys. The binary Ti-34.5 mass%Al exhibits a transfer from parabolic to linear kinetics. At 1173 K, the binary alloys show vary fast linear oxidation and even the Mo-added alloys exhibit breakaway oxidation. The 2.0 mass%Mo-added TiAl exhibits a slope between linear and parabolic. At values of 4.0 and 6.0 mass% added TiAl alloys, slightly larger rates are observed than those for the parabolic rate law, even after breakaway. On those alloys, the second $Al_2O_3$ layer appears to be persistently continuous. Oxidation resistance is considerably degraded by the addition of Mn. Mn appears to have the effect of breaking the continuity of the second $Al_2O_3$ layer.

• 한국안광학회지
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• 제15권4호
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• pp.313-317
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• 2010

목적: 이 연구 목적은 가공한 마그네슘 합금 AZ31 안경테를 plasma electrolytic oxidation(PEO) 표면 처리 후 표면특성에 대하여 조사하는 것이다. 방법: Plasma electrolytic oxidation(PEO) 표면 처리는 DC 전압을 변화시키며 처리하였고, 피막의 상 분석은 X-ray 회절기로 측정하였고, 형태학적 미세구조는 주사전자현미경로 관찰하였다. 그리고 피막층에 존재하는 원소의 농도를 에너지 분산 X-선 스펙트럼으로 조사하였다. 결과: PEO 처리시 전압이 증가함에 따라 XRD 측정 결과 MgO 피크가 증가하였으며, SEM 사진에서는 표면의 산화피막이 조밀하게 생기는 것을 확인 할 수 있었다. 그리고 EDS에서 성분의 변화도 일치함을 보여주었다. 결론: PEO 산화피막층은 전압이 증가 할수록 MgO 화합물의 형성이 점점 증가하기 때문에 산화막의 결정화가 진행되며, 65V에 60초 처리 시 표면상태, 접촉각, 내식성 시험에서 가장 좋은 결과를 보여 주었다.

• 한국재료학회지
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• 제25권4호
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• pp.202-208
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• 2015

Alumina dispersion strengthening copper(ADSC) alloy has great potential for use in many industrial applications such as contact supports, frictional break parts, electrode materials for lead wires, and spot welding with relatively high strength and good conductivity. In this study, we investigated the oxidation behavior of ADSC alloys. These alloys were fabricated in forms of plate and round type samples by surface oxidation reaction using Cu-0.8Al, Cu-0.4Al-0.4Ti, and Cu-0.6Al-0.4Ti(wt%) alloys. The alloys were oxidized at $980^{\circ}C$ for 1 h, 2 h, and 4 h in ambient atmosphere. The microstructure was observed with an optical microscope(OM) and a scanning electron microscope(SEM) equipped with energy-dispersive X-ray spectroscopy(EDS). Characterization of alumina was carried out using a 200 kV field-emission transmission electron microscope(TEM). As a result, various oxides including Ti were formed in the oxidation layer, in addition to ${\gamma}$-alumina. The thickness of the oxidation layer increased with Ti addition to the Cu-Al alloy and with the oxidation time. The corrected diffusion equation for the plate and round type samples showed different oxidation layer thickness under the same conditions. Diffusion length of the round type specimen had a value higher than that of its plate counterpart because the oxygen concentration per unit area of the round type specimen was higher than that of the plate type specimen at the same diffusion depth.

• Corrosion Science and Technology
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• 제3권4호
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• pp.140-147
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• 2004

High temperature oxidation of Fe-19Cr and Fe-19Cr-0.2Ti alloys is studied at 1173-1373 K in 16.5 kPa $O_2$ - balances $N_2$ atmosphere aimed at clarifying the effect of titanium addition. Oxidation rate of Fe-19Cr alloy was accelerated with titanium. For both alloys chromium rich $(Fe,\;Cr)_2O_3$ was formed as a major oxidation product. On Fe-19Cr-0.2Ti alloy, a thin layer composed of spinel type oxide and titanium oxide was also formed and an internal oxidation of titanium was observed. Titanium was concentrated at the oxide surface and internal oxidation zone but a small amount of titanium was also found in the intermediate corundum type $(Fe,\;Cr)_2O_3$ layer. Crystals of corundum type $(Fe,\;Cr)_2O_3$ formed on Fe-19Cr alloy are coarse but that formed on Fe-19Cr -0.2Ti alloys were fine and columnar. Reason for the difference in oxidation kinetics and crystal structure will be discussed relating to the distribution of aliovalent titanium in corundum type $(Fe,\;Cr)_2O_3$ oxide layer.

• 한국주조공학회지
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• 제18권6호
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• pp.593-603
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• 1998

Commercial ductile iron was coated with titanium and aluminum powders by low pressure plasma spraying and then irradiated with a $CO_2$ laser to produce anti-corrosive TiC composite layer. TiC carbides were precipitated homogeneously in a laser alloyed layer by in-situ reaction between carbon existed in the base metal and titanium with thermal sprayed coating. The formation of gas pores and brittle limited mixing zone with ledeburite microstructure in TiC composite layer were surpressed by the complementary alloying of aluminum. The hardness of TiC composite layer obtained by addition of titanium and aluminum was between 600 and 660 Hv, which was three times as high as the hardness of ferritic ductile iron. From the results of isothermal oxidation at 1123k for 24 hours in air, high temperature oxidation resistance of the TiC composite layer with aluminum was improved and doubled when compared with the TiC composite layer without aluminum.

• 대한전자공학회논문지
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• 제16권1호
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• pp.26-32
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• 1979

실리콘의 dry oxidation과 wet oxidation공정의 특성을 실험적으로 조사하였다. 산화온도는1,100℃, 1.150℃, 1.200℃를 사용하였고, 산소의 유량은 0.2 liter/min으로 부터 2.8 liter/min까지 변화시켰다. 산화막의 두께를 측정하여 0.1μ ∼ 1.0μ 을 성장시키는데 필요한 온도, 시간, 산소의 유량을 도표로 나타냈다. 산화막의 특성을 조사하기 위하여 유전 상수 절연파괴 전압, fixed surface charge density (Qss/q), mobile ciarge densify (Q /q)를 측정하였다. 측정 결과로부터 산화막이 MOS transistor에도 적합한 양질이라는 결론을 얻었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.187-187
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• 2010

In this study, we investigated the effect of electrodes on resistance switching of TaOx film. Pt, Ni, TiN, Ti and Al metal electrodes having the different oxidation degree were deposited on TaOx/Pt stack. Unipolar resistance switching behavior in Pt or Ni/TaOx/Pt MIM stacks was investigated, but bipolar resistance switching behavior in TiN, Ti or Al /TaOx/Pt MIM stacks was shown. We investigated that the voltage dependence of capacitance was decreased with higher oxidation degree of metal electrodes. Through the C-V results, we expected that linearity ($\alpha$) and quadratic ($\beta$) coefficient was reduced with an increase of interface layer between top electrode and Tantalum oxide. Transmission Electron Microscope (TEM) images depicted the thickness of interface layer formed with different oxidation degree of top electrode. Unipolar resistance switching behavior shown in lower oxidation degree of top electrode was expected to be generated by the formation of the conducting path in TaOx film. But redox reaction in interface between top electrode and Tantalum oxide may play an important role on bipolar resistance switching behavior exhibited in higher oxidation degree of top electrode. We expected that the resistance switching characteristics were determined by oxidation degree of metal electrodes.

• Bulletin of the Korean Chemical Society
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• 제17권4호
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• pp.324-330
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• 1996

We examined the formal oxidation states of Pb and Cu in the Pb2CuO4 slab of Pb2Sr2ACu3O8(A=Y1-xCaxor Nd1-xSrx) and their possible changes by oxygen incorporation in the Cu layer of the slab by performing tight-binding band electronic structure calculations on the Pb2CuO4+δ slab. Our results show that the most likely oxidation state of Pb is +2 and that of Cu is +1 for the Pb2CuO4 slab prior to oxidation. With small δ values, the oxygen incorporation occurs by the formation of such chain fragments as in YBa2Cu3O7-y along the a+b axis. The four-coordinate Cu atoms in the chain fragments are in the +3 oxidation states. For values of δ larger than 0.5, however, an additional oxygen (Oad) goes to the site along the b axis to form short Pb-Oad distances oxidizing Pb2+ to Pb4+. This change in the Pb oxidation state leads to the suppression of superconductivity due to the decrease of holes in the CuO2 layer.