• 반도체디스플레이기술학회지
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• 제18권3호
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• pp.42-46
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• 2019

In this paper, we introduce the novel idea to improve parallel test efficiency of semiconductor test. The idea includes the test interface card consisting of NoC structure able to transmitting test data regardless of ATE speed. We called the scheme "Multi-Clock" mode. In the proposed mode, because NoC can spread over the test data in various rates, many semiconductors are tested in the same time. We confirm the proposed idea will be promising through a FPGA board test and it is important to find a saturation point of the Multi-Clock mode due to the number of test chips and ATE channels.

• 한국컴퓨터정보학회논문지
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• 제21권9호
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• pp.19-25
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• 2016

This paper is to recognize and play tab chords from guitar musical sheets. The musical chord area of an input image is segmented by changing the image in saturation and applying the Grabcut algorithm. Based on a template matching, our approach detects tab starting sections on a segmented musical area. The virtual block method is introduced to search blanks over chord lines and extract tab fret segments, which doesn't cause the computation loss to remove tab lines. In the experimental tests, the prototype based classification outperforms Bayesian method and the nearest neighbor rule with the whole set of training data and its performance is similar to that of the support vector machine. The experimental result shows that the prediction rate is about 99.0% and the number of selected prototypes is below 3.0%.

• KSBB Journal
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• 제6권2호
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• pp.207-213
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• 1991

In this study poly (1-methyl-4-vinylpyridinium iodide-co-styrene) membrane with pyridinium cation as a fixed carrier was synthesized and the transport characteristics of the membrane was examined over various factors. As the concentration of the fixed carrier in the membrane was increased, the water content was increased. Meanwhile, the counter current of the organic anion and the chloride ion, the following results were obtained. Initial flux of Cl-, organic anion and Na+ decreased with the increasing thickness of membrane, and as the concentration of the fixed carrier increases, the initial flux of Cl- and organic anion increase but the initial flux of Na+ decreased. The flux equation of the organic anion, CCl3COO- was obtained from saturation kinetics as follows;$V_{o}=\frac{(8.67{\times}10^{-5}){\cdot}[NaCl]}{9.63{\times}10^{-2}+[NaCl]} mol/cm^2h$

• 한국전기전자재료학회논문지
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• 제13권5호
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• pp.365-370
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• 2000

Schottky contacts on n-In$\_$0.53//Ga$\_$0.47//As have been made by metal deposition on substrates cooled to a temperature of 77K. The current-voltage and capacitance-voltage characteristics showed that the Schottky diodes formed at low temperature had a much improved barrier height compared to those formed at room temperature. The Schottky barrier height ø$\_$B/ was found to be increased from 0.2eV to 0.6eV with Ag metal. The saturation current density of the low temperature diode was about 4 orders smaller than for the room temperature diode. A current transport mechanism dominated by thermionic emission over the barrier for the low temperature diode was found from current-voltage-temperature measurement. Deep level transient spectroscopy studies exhibited a bulk electron trap at E$\_$c/-0.23eV. The low temperature process appears to reduce metal induced surface damage and may form an MIS (metal-insulator-semiconductor)-like structure at the interface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.303-305
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• 2000

The effect of anisotropy field on the high frequency magnetic characteristics of FeTaN films was investigated. Those films show good magnetic properties : 4$\pi$Ms of 13KG, Hc of 0.6 Oe, effective permeability(${\mu}$') of 800 with a stable frequency response up to 800MHz. The films also show a large anisotropy field(Hk) over 21Oe. It result from the increased anisotropy of patterned FeTaN films. The combination of high saturation magnetization and relatively high Hk in these films is believed to the partly responsible for FeTaN for the excellent high-frequency behavior.

• 한국전기전자재료학회논문지
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• 제13권11호
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• pp.895-900
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• 2000

In this paper, C-V characteristics based on the structure of GaAs MESFET’s has been proposed with wide range of applied voltages and temperatures. Small signal capacitance; gate-source and gate-drain capacitances are represented by analytical expressions which are classified into two different regions; linear and saturation regions with bias voltages. The expression contains two variables; the built-in voltage( $V_{vi}$ )and the depletion width(W). Submicron gate length MESFETs has been selected to prove the validity of the theoretical perdiction and shows good agreement with the experimental data over the wide range of applied voltages.

• 전기학회논문지
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• 제66권2호
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• pp.285-291
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• 2017

This paper proposes the use of advanced generator models in the studies of Korean power systems to accurately represent the dynamic behaviors of synchronous generators and thus to achieve a better match between transient stability simulations and reality. In the paper, GENTPF and GENTPJ models are described which have appeared over the last decade in the WECC system. Those advanced models are compared with conventional synchronous generator models such as GENROU and GENSAL, which have been used in dynamic studies of Korean power systems. The advancements are investigated by recognizing the differences in block diagram, saturation modeling, and network interface equations. Simulation comparisons between conventional and advanced models in Korean power systems are then provided. Clear distinctions identified in the simulation results demonstrate the necessity of the use of advanced generator models in Korean power system.

• Nuclear Engineering and Technology
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• 제50권3호
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• pp.526-530
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• 2018

Human fingernails were used to estimate the radiation dose via electron paramagnetic resonance measurements of radiation-induced radicals. The limiting factors in this research were mechanically induced electron paramagnetic resonance signals due to the mechanical stress during the preparation of the samples. Therefore, different treatment methods of fingernails were used to reduce the mechanically induced signals. The results demonstrate that the mechanically induced and radiation-induced signals have apparently different microwave power saturation behaviors. In addition, the mechanically induced signal shows a fading evolution over time and reaches a constant value. Chemical treatment using the different reagents showed that the minimum mechanically induced signal was obtained using the dithiothreitol reagent. The dose-response curves of the samples treated with dithiothreitol for 30 minutes demonstrated a greater linearity than those of samples treated for 5 minutes. Therefore, to find an unknown absorbed dose in a fingernail sample using a calibration curve, we recommend adopting the mentioned chemical treatment procedure to reduce the uncertainty.

• 한국컴퓨터정보학회논문지
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• 제5권3호
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• pp.76-83
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• 2000

CMOS기술의 발전에 의해 연속신호시스템은 상당한 발전을 가져왔다. 이 논문에서는 새로운 CMOS floating저항을 써서 저역통과필터를 설계하고 PSpice Simulation을 통하여 그 특성이 우수함을 입증하였다. 특히, CMOS로 구성되는 새로운 floating저항은 포화영역에서 동작하도록 구현하였다. 이 방법으로 설계된 저역통과필터는 SC필터보다 구조가 더 간단하므로 IC화 할 때 칩 면적을 감소시킬 수 있다.

• Journal of the Optical Society of Korea
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• 제12권4호
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• pp.337-345
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• 2008

This article presents the RSOA-based re-modulation schemes for practical application to the WDM-PON link. Emphasis is put on the three methods for reducing the residual downstream signal in the upstream transmission; the simplest one is to use the RSOA gain-saturation property, the second uses selective filtering of the adiabatic-chirped DFB-LD output spectrum, and the last uses a dynamic RSOA gain control by varying its driving current according to the incident binary signal. The reflection sensitivity in the proposed re-modulation link is also qualitatively presented in the cases of using two different types of seed light: coherent light from DFB-LD array and spectrum-sliced incoherent ASE light. We show experimental results of an error-free bidirectional gigabit transmission over 20 km at -30 dB reflection with the spectrum-sliced ASE seed light.