Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The effect of anisotropy field of FeTaN thin films for ultraigh-hfrequency applications

초고주파대역용 소자를 위한 FeTaN 박막의 이방자계의 영향

  • 류성룡 (홍익대학교 금속.재료공학과) ;
  • 배석 (홍익대학교 금속.재료공학과) ;
  • 정종한 (홍익대학교 금속.재료공학과) ;
  • 김충식 (홍익대학교 금속.재료공학과) ;
  • 남승의 (홍익대학교 금속.재료공학과) ;
  • 김형준 (홍익대학교 금속.재료공학과)
  • Published : 2000.11.01
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Abstract

The effect of anisotropy field on the high frequency magnetic characteristics of FeTaN films was investigated. Those films show good magnetic properties : 4$\pi$Ms of 13KG, Hc of 0.6 Oe, effective permeability(${\mu}$') of 800 with a stable frequency response up to 800MHz. The films also show a large anisotropy field(Hk) over 21Oe. It result from the increased anisotropy of patterned FeTaN films. The combination of high saturation magnetization and relatively high Hk in these films is believed to the partly responsible for FeTaN for the excellent high-frequency behavior.

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