Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)
- Volume 13 Issue 11
- /
- Pages.895-900
- /
- 2000
- /
- 1226-7945(pISSN)
- /
- 2288-3258(eISSN)
C-V Characteristics of GaAs MESFETs
GaAs MESFET의 정전용량에 관한 특성 연구
Abstract
In this paper, C-V characteristics based on the structure of GaAs MESFET’s has been proposed with wide range of applied voltages and temperatures. Small signal capacitance; gate-source and gate-drain capacitances are represented by analytical expressions which are classified into two different regions; linear and saturation regions with bias voltages. The expression contains two variables; the built-in voltage(
Keywords
- Metal-Semiconductor Field-Effect Transistor(MESFET);
- Gate to Source Capacitance($C_{gs}$);
- Gate to Drain Capactitance($C_{gd}4)