• Bulletin of the Korean Chemical Society
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• v.24 no.5
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• pp.645-646
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• 2003

• Bulletin of the Korean Chemical Society
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• v.35 no.2
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• pp.431-435
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• 2014

Zinc peroxide nanoparticles ($ZnO_2$ NPs) were prepared by reacting zinc(II) isobutylcarbamate, as an organometallic precursor, with hydrogen peroxide ($H_2O_2$) at $60^{\circ}C$. Polyethylene glycol and polyvinylpyrrolidone were used as stabilizers, which suppressed aggregation of the $ZnO_2$ NPs. Conditions such as concentrations of $H_2O_2$ and the stabilizer were systemically controlled to determine their effect on the formation of nano-sized $ZnO_2$ NPs. The formation of stable $ZnO_2$ NPs was confirmed by UV-vis, Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy (TEM), scanning electron microscopy (SEM), and X-ray diffraction. The TEM images revealed that polyvinylpyrrolidone-stabilized $ZnO_2$ NPs (diameter, 10-30 nm) were well dispersed in the organic solvent. Quite pure ZnO NPs were obtained from the peroxide powder by simple heat treatment of $ZnO_2$. The transition temperature of $170^{\circ}C$ was determined by differential scanning calorimetry.

• Bulletin of the Korean Chemical Society
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• v.30 no.1
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• pp.114-118
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• 2009

A new Zn/O single source precursor, TMEDA-Zn$(eacac)_2$, has been synthesized by using N, N, N’, N’-tetramethylethylendiamine (TMEDA), sodium ethyl-acetoacetate, and $ZnCl_2$. From this organometallic precursor, ZnO thin films have been successfully grown on Si (100) substrates through the metal organic chemical vapor deposition (MOCVD) method at relatively mild conditions in the temperature range of 390~430 ${^{\circ}C}$. The synthesized ZnO films have been found to possess average grain sizes of about 70 nm with an orientation along the c-axis. The precursor and ZnO films are characterized through infrared spectroscopy, nuclear magnetic resonance spectroscopy, EI-FAB-spectroscopy, elemental analyses, thermal analysis, X-ray diffraction, and field emission scanning electron microscopic analyses.

• Bulletin of the Korean Chemical Society
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• v.19 no.12
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• pp.1314-1319
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• 1998

Electronic structures and properties of the organometallic precursors [Me2AlNHR]2 (R =Me, iPr, and tBu) have been calculated by the semiempirical (ASED-MO, MNDO, AM1 and PM3) methods. Optimized structures obtained from the MNDO, AM1, and PM3 calculations indicate that the N-C bond lengths are considerably affected by the change of the R groups bonded to nitrogen, but the bond lengths of the Al-N and Al-C bonds are little affected. This result is useful in explaining the experimental results for the elimination of the R groups bonded to nitrogen, and could serve as a guide in designing an optimum precursor for the AlN thin film formation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.11
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• pp.20-25
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• 2007

In this paper, It was reported the dielectric constant in organic inorganic hybrid silica material such as SiOC film modeling of bond structure by annealing in organic properties. The organic inorganic hybrid silica material were deposited using bis-trimethylsilymethane (BTMSM, [(CH3)3Si]2CH2) and oxygen gas precursor by a plasma chemical vapor deposition (CVD). The organic inorganic hybrid silica material have three types according to the deposition condition. The dielectric constant of the films were performed MIS(Al/Si-O-C film/p-Si) structure. The C 1s spectra in organin inorganic silica materials with the flow rate ratio of O2/BTMSM=1.5 was organometallic carbon with the peak 282.9 eV by XPS. It means that organometallic carbon component is the cross-link bonding structure with good stability. The dielectric constant was the lowest at annealed films with cross-link bonding structure.

• Proceedings of the Korean Fiber Society Conference
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• 2003.04a
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• pp.98-100
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• 2003

The efficiency of the adsorption of adsorbents depends on both pore size and shape. In other to adsorb hydrated ion in application of electric double layer capacitor (EDLC), mesopore is necessary[1,2]. Tamai et al.[3] reported that an increased portion of mesopore was introduced through addition of metal or organometallic compound in the precursor and following activation of the carbon fibers with steam. (omitted)

• Journal of the Korean institute of surface engineering
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• v.33 no.4
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• pp.261-265
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• 2000

Geometrically and chemically well defined Pt/alumina model catalysts have been prepared. To this end, we fabricated electrochemically alumina supports in which pores of constant size, length and shape were regularly distributed over a wide area of the surface. Platinum particles were dispersed on the pore surfaces via organometallic chemical vapor deposition technique using (trimethyl) methylcyclopentadienylplatinum (IV) as a precursor. The chemical composition of the alumina plane surfaces was examined by Auger electron spectroscopy and the adsorption characteristics of the platinum particles were studied by thermal desorption spectroscopy. A variety of industrial catalytic problems are now open for further investigation utilizing the Pt/alumina model catalysts.

• Bulletin of the Korean Chemical Society
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• v.35 no.11
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• pp.3299-3302
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• 2014

The In2S3 thin films of tetragonal structure and In2O3 films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ($[(Et)_3NH]^+[In(SCOCH_3)_4]^-$; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide ($SiO_2$) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of $10.1cm^2V^{-1}s^{-1}$ at a curing temperature of $500^{\circ}C$, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.

• Bulletin of the Korean Chemical Society
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• v.15 no.1
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• pp.79-83
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• 1994

The organometallic chemical vapor deposition of single precursors, $[Me_2Al({\mu}-NHR)]_2\;(R=^iPr,\;^tBu)$, for alumininum nitride thin films has been investigated to evaluate their poroperties as potential precursors. In chemical vapor deposition processes the gas phase products scattered from a Ni(100) substrate were analyzed by mass spectrometry and the deposited films were characterized by X-ray photoelectron spectroscopy (XPS). The optimum temperatures for the formation of AlN films have been found to be between 700 K and 800 K. Carbon contamination of the films seems to be attributed mainly to the methyl groups bonded to the aluminum atoms. It is apparent that $^tBu$ group is better than $^iPr$ group as a substituent on the nitrogen atom of the single precursors for the AlN thin film formation.

• Journal of the Korean Chemical Society
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• v.38 no.2
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• pp.92-100
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• 1994

Ultrafine cobalt-substituted iron oxide particles were prepared by the thermal decomposition and oxidation of the new organometallic precursor, $Co_xFe_{1-x}(N_2H_3COO)_2(N_2H_4)_2$ (x = 0, 0.01, 0.02, 0.03, 0.05, 0.10, 1.00). The organometallic precursors were synthesized by the reaction of Co(II) and Fe(II) ion in a mole ratio of x : 1-x with hydrazinocarboxylic acid, and characterized by quantitative analysis, elemental analysis and infrared spectroscopy. The mechanistic study on the thermal decomposition of the organometallic precursors was performed by TG-DTG and DSC. The cobalt-substituted iron oxide particles were obtained by the heat treatment of the precursors at $350^{\circ}C$ and $450^{\circ}C$ for six hours in air. The prepared iron oxide was found to have two phases such as ${\gamma}-Fe_2O_3$ and a mixture of ${\gamma}-Fe_2O_3\;and\;{\alpha}-Fe_2O_3$ at $350^{\circ}C$ and $450^{\circ}C$ respectively. The particle shape was equiaxial and the particle size was less than 0.05 ${\mu}m.$ The coercivity and squareness of the cobalt substituted iron oxide particles increased with increasing cobalt content. Both coercivity and squareness showed higher values at $450^{\circ}C.$