• 제목/요약/키워드: Organic thin-film transistor (OTFT)

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Photo-Leakage Currents in Organic Thin-Film Transistor

  • Cho, Sang-Mi;Han, Seung-Hoon;Kim, Jun-Hee;Lee, Sun-Hee;Choo, Dong-June;Uchiike, H.;Oh, Myung-Hwan;Jang, Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1386-1389
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    • 2005
  • We report the light illumination effect on the performance of pentacene organic thin-film transistor (OTFT). The TFT performance with and without illumination were measured at various temperatures. The off-state currents increase linearly with light intensity in the region of gate voltage where the holes are majority carriers in the TFT channel. The minimum photocurrents of OTFT increase with increasing light intensity.

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새로운 방식의 유기박막트랜지스터 패시베이션 기술 (The novel encapsulation method for organic thin-film transistor)

  • 이정헌;김성현;김기현;임상철;조은나리;장진;정태형
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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    • pp.177-180
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    • 2004
  • In this study, we report a novel encapsulation method for longevity of an organic thin-film transistor (OTFT) using pentaceneby means of an adhesive multiplayerincluded Al film. For encapsulation of OTFTs, the Al film adhered onto the OTFT in a dry nitrogen atmosphere using a proper adhesive. A lifetime, which was defined as the time necessary to reduce mobility to 2% of initial mobility value, was observed from the typical $I_{D-VD}$ characteristics of the field-effect transistor (FET). The initial field effect mobility ${\mu}$ was measured to be $2.0{\times}10^{-1}\;cm^2/Vs$. The characterization was maintained for long times in air. No substantial degeneration occurred. The performance and the stability are probably due to the encapsulation effect.

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Organic Passivation Material-Polyvinyl Alcohol (PVA)/Layered Silicate Nanocomposite-for Organic Thin Film Transistor

  • Ahn, Taek;Suk, Hye-Jung;Yi, Mi-Hye
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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    • pp.1539-1542
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    • 2007
  • We have synthesized novel organic passivation materials to protect organic thin film transistors (OTFTs) from $H_2O$ and $O_2$ using polyvinyl alcohol (PVA)/layered silicate (SWN) nano composite system. Up to 3 wt% of layered silicate to PVA, very homogeneous nanocomposite solution was prepared.

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유기물과 유무기 혼합 폴리머 게이트 절연체를 사용한 유기 박막 트랜지스터의 특성 (Characteristics of Organic Thin Film Transistors with Organic and Organic-inorganic Hybrid Polymer Gate Dielectric)

  • 배인섭;임하영;조수헌;문송희;최원석
    • 한국전기전자재료학회논문지
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    • 제22권12호
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    • pp.1009-1013
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    • 2009
  • In this study, we have been synthesized the dielectric layer using pure organic and organic-inorganic hybrid precursor on flexible substrate for improving of the organic thin film transistors (OTFTs) and, design and fabrication of organic thin-film transistors (OTFTs) using small-molecule organic semiconductors with pentacene as the active layer with record device performance. In this work OTFT test structures fabricated on polymerized substrates were utilized to provide a convenient substrate, gate contact, and gate insulator for the processing and characterization of organic materials and their transistors. By an adhesion development between gate metal and PI substrate, a PI film was treated using $O_2$ and $N_2$ gas. The best peel strength of PI film is 109.07 gf/mm. Also, we have studied the electric characteristics of pentacene field-effect transistors with the polymer gate-dielectrics such as cyclohexane and hybrid (cyclohexane+TEOS). The transistors with cyclohexane gate-dielectric has higher field-effect mobility, $\mu_{FET}=0.84\;cm^2/v_s$, and smaller threshold voltage, $V_T=-6.8\;V$, compared with the transistor with hybrid gate-dielectric.

Plasma 처리한 유기 절연층을 갖는 유기 박막 트랜지스터의 전기적 특성 연구 (A Study on the Electrical Characteristics of Organic Thin Film Transistor, OTFT With Plasma-Treated Gate Insulators)

  • 김연주;박재훈;강성인;최종선
    • 한국진공학회지
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    • 제13권3호
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    • pp.99-102
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    • 2004
  • 유기 절연층을 사용한 유기 박막 트랜지스터의 특성 향상을 위해 절연층 표면에 Ar플라즈마 처리를 하였다. 플라즈마 처리는 절연체 표면의 화학적, 물리적 특성 변화를 통해 그 후에 이어지는 활성층 성막시 분자들의 결정성을 향상시키기 위한 방법이다. 활성층으로 사용된 물질은 pentacene이며, 절연층으로 사용된 물질은 PVP(poly-vinyl-phenol)이다. Pentacene는 약 $10^{-6}$ Torr에서 0.5 $\AA$/sec의 속도로, PVP는 spin coating법에 의해 각각 성막되었다. 형성된 절연층을 일정 시간동안 H플라즈마 처리 한 후 각 소자의 전기적 특성을 측정하여 표면처리에 의한 특성 변화를 살펴보았다.

유연성 유기 박막트랜지스터 적용을 위한 다층 게이트 절연막의 전기적 및 기계적 특성 향상 연구 (Improvement of Electrical and Mechanical Characteristics of Organic Thin Film Transistor with Organic/Inorganic Laminated Gate Dielectric)

  • 노화영;설영국;김선일;이내응
    • 한국표면공학회지
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    • 제41권1호
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    • pp.1-5
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    • 2008
  • In this work, improvement of mechanical and electrical properties of gate dielectric layer for flexible organic thin film transistor (OTFT) devices was investigated. In order to increase the mechanical flexibility of PVP (poly(4-vinyl phenol) organic gate dielectric, a very thin inorganic $HfO_2$ layers with the thickness of $5{\sim}20nm$ was inserted in between the spin-coated PVP layers. Insertion of the inorganic $HfO_2$ in the laminated organic/inorganic structure of PVP/$HfO_2$/PVP layer led to a dramatic reduction in the leakage current compared to the pure PVP layer. Under repetitive cyclic bending, the leakage current density of the laminated PVP/$HfO_2$/PVP layer with the thickness of 20-nm $HfO_2$ layer was not changed, while that of the single PVP layer was increased significantly. Mechanical flexibility tests of the OTFT devices by cyclic bending with 5 mm bending radius indicated that the leakage current of the laminated PVP/$HfO_2$(20 nm)/PVP gate dielectric in the device structure was also much smaller than that of the single PVP layer.

Fabrication of An Organic Thin-Film Transistor Array by Wettability Patterning for Liquid Crystal Displays

  • Kim, Sung-Jin;Bae, Jin-Hyuk;Ahn, Taek;Suh, Min-Chul;Chang, Seung-Wook;Mo, Yeon-Gon;Chung, Ho-Kyoon;Lee, Sin-Doo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.151-154
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    • 2007
  • We demonstrate a novel selective patterning process of a semiconducting polymer for channel regions to fabricate an array of organic thin-film transistors (OTFTs). This process is applicable for various organic films over large area. A reflective liquid crystal display based on the OTFT array was produced using the selective patterning through a wettability control.

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초고진공환경에서 제작된 perylene 박막 트랜지스터의 특성 (Characteristics of perylene OTFT fabricated in UHV)

  • 박대식;강성준;김희중;노명근;황정남
    • 한국진공학회지
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    • 제13권1호
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    • pp.9-13
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    • 2004
  • 본 연구에서는 P 형과 N 형의 특성을 모두 갖추 것으로 알려진 perylene의 특성을 연구하였다. 특히 구조적 특성과 전기적 특성 향상을 위하여 초고진공 상태에서 $SiO_2$ 기판 위에 perylene 박막을 제작하였는데 증착 속도에 따른 박막의 특성 향상 여부를 살펴보기 위하여 0.1 $\AA$/s 와 1 $\AA$/s로 변화시켜가며 박막을 제작하였다. 박막의 결정성과 표면 특성은 X-선 회절과 원자 간력 현미경을 이용하여 살펴보았는데, 1 $\AA$/s로 증착된 perylene박막이 더 우수한 결정성과 표면 분포를 보였다. 박막의 전기적 특성 확인을 위하여 heavily doped 실리콘 기판 위에 $SiO_2$와 gold를 이용한 perylene 박막 트랜지스터를 제작하였다. 얻어진 perylene 박막 트랜지스터는 P 형의 반도체적 성질을 나타내었으며, 전류-전압 특성 곡선을 이용하여 $2.23\times10^{-5}\textrm{cm}^2$/Vs 의 전하 이동도를 얻었다.

유기박막트랜지스터(OFTF)를 이용한 AMOLED 픽셀 보상회로 연구 (A New Organic Thin-Film Transistor based Current-driving Pixel Circuit for Active-Matrix Organic Light-Emitting Displays)

  • 신아람;배영석;황상준;성만영
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.22-23
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    • 2006
  • A new current-driving pixel circuit for active-matrix organic light-emitting diodes (AMOLEDs), composed of four organic thin-film transistors (OTFTs) and one capacitor, is proposed using a current scaling method. Designing pixel circuits with OTFTs has many problems due to the instability of the OTFT parameters with still unknown characteristics of the material. Despite the problems in using OTFTs to drive the pixel circuit, our work could be set as a goal for future OTFT development. The simulation results show enhanced linearity between input data and OLEO luminescence at low current levels as well as successfully compensating the variation of the OTFTs, such as the threshold voltage and mobility.

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유기 박막 트랜지스터 (Organic TFT)의 유기 활성층 기술 동향

  • 장상웅;최준환;윤호규;이주원;주병권;김재경
    • E2M - 전기 전자와 첨단 소재
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    • 제17권8호
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    • pp.3-12
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    • 2004
  • 유기 박막 트랜지스터 (Organic Thin film Transistors ; 이하 OTFT)는 1986년부터(1) 반도체 장치의 새로운 부류로 급속하게 발전해 오고 있다. 반도체 산업에 있어 이러한 유기물질의 큰 발전은 1947년에 있었던 최초의 inorganic FET (Field Effect Transistor) 탄생에 버금갈 만한 성과라고 여겨진다.(중략)

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