• 제목/요약/키워드: Organic precursor

검색결과 305건 처리시간 0.03초

전력기기 선재 합성 기술 (Fabrication Technology of High Tc Superconductor by Organic Salts Method)

  • 이상헌
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.42-43
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    • 2006
  • High Tc superconducting with a BiSrCaCuO was prepared by the citrate method. The solid precursor produced by the dehydration of the gel at $120^{\circ}C$ for 12h is not in the a morphous state as expected but in a crystalline state. X -ray diffraction peaks of nearly the same angular position as the peaks of high Tc phase were observed in the precursor.

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Gate dielectric based on organic-inorganic hybrid polymer in organic thin-film transistors

  • Lee, Seong-Hui;Jeong, Sun-Ho;Moon, Joo-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.727-729
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    • 2007
  • Inorganic-organic hybrid polymer provides various advantages including low-temperature process, high dielectric constant and direct photo-patterning. The hybrid dielectric was synthesized by the sol-gel process in which an acid-catalyzed solution of Si alkoxide and Zr alkoxide was used as a precursor. The electrical performance of transistors with hybrid dielectric was investigated.

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MOD법에 의해 제조된 $NO_x$ 가스용 반도체 박막센서의 특성 (Characteristics of Semiconductor Thin Film $NO_x$ Sensor Fabricated by MOD Method)

  • 송수호;송민석;이재열
    • 한국전기전자재료학회논문지
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    • 제11권11호
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    • pp.1001-1006
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    • 1998
  • $WO_3$ based semiconduction sensor have been reported to have excellent sension properties to $NO_x$ gases by many researchers. In this study appropriate $WO_3$ precursor have been chosen and thin film sensors were fabricated by metallo organic deposition process. Their sensing characteristics were investigated as a function of NO concentration, heat treatment, and measuring temperature. Tungsten dichloro triethoxide was found to be a good precursor for $WO_3$ thin film in this method. Samples heat treated at $600^{\circ}C$ showed sensitivity (S) 200 to 50 ppm NO gas when measuring temperature was $150^{\circ}C$.

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Preparation of Phase Pure Cuprate Superconductors via The Modification of Sol-Gel Method

  • Ahn, Beom-Shu
    • 한국응용과학기술학회지
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    • 제17권2호
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    • pp.144-148
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    • 2000
  • A modification of the sol-gel method to obtain phase pure superconducting oxides is described. The method starts from organic salts of yttrium, barium and copper, such as acetates, and avoids the sudden and uncontrollable decomposition of the organic fraction which occurs if nitrates are used as starting materials. The aqueous solution obtained with citric acid in an alkaline medium is concentrated under vacuum. The solid so prepared is decomposed at about $300^{\circ}C$ thus giving an oxide precursor containing well dispersed yttrium, barium and copper. Pyrolysis at 850 - $920^{\circ}C$ followed by oxygen annealing gives the superconducting orthorhombic 123 phase. The results of TGA/DTA of the precursor, as well as XRD, electrical and magnetic property measurements on the pyrolysis products are presented and discussed.

비 진공으로 제작한 CIGS 박막 특성 (Characteristics of CIGS film fabricated by non-vacuum process)

  • 박명국;안세진;윤재호;곽지혜;김동환;윤경훈
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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    • pp.19-22
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    • 2009
  • A non-vacuum process for fabrication of $CuIn_xGa_{1-x}Se_2$ (CIGS) absorber layer from the corresponing Cu, In, Ga solution precursors was described. Cu, In, Ga precursor solution was prepared by a room temperature colloidal route by reacting the starting materials $Cu(NO_3)_2$, $InCl_3$, $Ga(NO_3)$ and methanol. The Cu, In, Ga precursor solution was mixed with ethylcellulose as organic binder material for the rheology of the mixture to be adjusted for the doctor blade method. After depositing the mixture of Cu, In, Ga solution with binder on Mo/glass substrate, the samples were preheated on the hot plate in air to evaporate remaining solvents and to burn the organic binder material. Subsequently, the resultant CIG/Mo/glass sample was selenized in Se evaporation in order to get a solar cell applicable dense CIGS absorber layer. The CIGS absorber layer selenized at $530^{\circ}C$ substrate temperature for 1h with various metal organic ratio.

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나노기공에 의한 박막 내의 기공율과 절연상수의 상관관계 (Correlation between the dielectric constant and porosity due to the nano pore in the thin film)

  • 오 데레사
    • 대한전자공학회논문지SD
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    • 제44권3호
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    • pp.1-5
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    • 2007
  • SiOC 박막은 산소와 bistrimethylsilylmethane 전구체를 사용하여 CVD방법을 이용하여 만들었다. 유량비에 따라서 유기물, 하이브리드 그리고 무기물 특성의 3가지 특성으로 분류되어지는데 유기물의 특성을 지니는 박막에서 기공이 생성되었다 기공의 생성은 유전상수가 낮아지는 효과가 있으며, 본 연구에서는 기공이 형성되는 유기물 특성의 SiOC 박막내의 기공율을 Maxwell-Garnett 등식을 이용하여 계산하였다. 박막의 기공율은 IR분포에서 blue shift특성을 가지며, 기공율이 증가할수록 유전상수는 감소하였다.