Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characteristics of Semiconductor Thin Film $NO_x$ Sensor Fabricated by MOD Method

MOD법에 의해 제조된 $NO_x$ 가스용 반도체 박막센서의 특성

  • 송수호 (영남대학교 금속 및 재료공학부) ;
  • 송민석 (영남대학교 금속 및 재료공학부) ;
  • 이재열 (영남대학교 금속 및 재료공학부)
  • Published : 1998.11.01
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Abstract

$WO_3$ based semiconduction sensor have been reported to have excellent sension properties to $NO_x$ gases by many researchers. In this study appropriate $WO_3$ precursor have been chosen and thin film sensors were fabricated by metallo organic deposition process. Their sensing characteristics were investigated as a function of NO concentration, heat treatment, and measuring temperature. Tungsten dichloro triethoxide was found to be a good precursor for $WO_3$ thin film in this method. Samples heat treated at $600^{\circ}C$ showed sensitivity (S) 200 to 50 ppm NO gas when measuring temperature was $150^{\circ}C$.

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References

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