• Korean Journal of Metals and Materials
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• v.46 no.2
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• pp.80-87
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• 2008

Many researches related to the reliability of Pb-free solder joints with PCB (printed circuit board) surface finish under thermal or vibration stresses are in progress, because the electronics is operating in hash environment. Therefore, it is necessary to assess Pb-free solder joints life with PCB surface finish under thermal and mechanical stresses. We have investigated 4-points bending fatigue lifetime of Pb-free solder joints with OSP (organic solderability preservative) and ENIG (electroless nickel and immersion gold) surface finish. To predict the bending fatigue life of Sn-3.0Ag-0.5Cu solder joints, we use the test coupons mounted 192 BGA (ball grid array) package to be added the thermal stress by conducting thermal shock test, 500, 1,000, 1,500 and 2,000 cycles, respectively. An 4-point bending test is performed in force controlling mode. It is considered that as a failure when the resistance of daisy-chain circuit of test coupons reaches more than $1,000{\Omega}$. Finally, we obtained the solder joints fatigue life with OSP and ENIG surface finish using by Weibull probability distribution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.80-83
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• 2000

In this work we deposited Pentacene thin film by OMBD at the various substrate temperatures, deposition rate and the various annealing temperatures for the fabrication of organic TFT and investigated the electrical and film surface characteristics such as sheet resistance, contact resistance and conductance Film thickness were measured by $\alpha$-step and the sheet resistance, contact resistance and conductance were extracted from the relation between the distance of the contacts and the resistance. During the film deposition the substrate temperature was held at 3$0^{\circ}C$, 4$0^{\circ}C$, 5$0^{\circ}C$, 6$0^{\circ}C$, 8$0^{\circ}C$ and 10$0^{\circ}C$, respectively. After the film deposition, Au contact was deposited by thermal evaporation. For the effect of annealing, the thin film was annealed in the nitrogen environment at 10$0^{\circ}C$ and 14$0^{\circ}C$ for 10 seconds, respectively. Film surface characteristics at the vatious substrate temperatures were measured by AFM. The crystallization of thin film was improved as the substrate temperatures were increased and the maximum gram size was 4${\mu}{\textrm}{m}$. The conductivity of thin film was found to be 7.40 $\times$10$^{-7}$ ~ 7.78$\times$10$^{-6}$ S/cm and the minimum contact resistance was 2.5324 ㏁.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.137-137
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• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.

• Korean Journal of Microbiology
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• v.43 no.1
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• pp.19-22
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• 2007

Acetohydroxyacid synthase (E.C.2.2.1.6., AHAS) is the enzyme that catalyses the first step in the synthesis of the branched-chain amino acids valine, leucine and isoleucine. The AHAS gene (TIGR access code HI2585) from Heamophilus influenzae was cloned into the bacterial expression vector pET-28a and expressed in the Escherichia coli strain BL21(DE3). The expressed enzyme was purified by $Ni^{2+}-charged$ HiTrap chelating HP column. The purified enzyme appears as a single band on SDS-PAGE with a molecular mass of about 63.9 kDa. The enzyme exhibits absolute dependence on the three cofactors FAD, $MgCl_{2}$ and thiamine diphosphate for activity. Specific activity of purified enzyme has 3.22 unit/mg and optimum activity in the pH 7.5 at $37^{\circ}C$. This enzyme activity has an effect on the buffer. When comparing the enzyme activity against the organic solvent, it followed in type and the difference it is but even from the aqueous solution where the organic solvent is included with the fact that the enzyme activity is maintained.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.8
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• pp.129-135
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• 2016

This study is about ionic water generator filter Recently, a lot of people feel deep interest in health and drinking water. Evaluation of the stability of oxidation-reduced potential (ORP) using the filter of the alkaline water. This study utilizes the three filter of activated carbon, UF, carbon block in alkaline reduced water equipment. Passing the water to the filter is evaluated that the OPR values are stability in accordance with the change of the volume in the bucket. Alkaline reduced water equipment is a system that has the function of making the water reduction. This system is the values of the human body beneficial minerals and ORP are made in the functional water has a very low value than general water. Which has passed through the filter the water in the water negative ions and positive ions through the electrolytic. After electrolysis, the cathode side by water, including $Ca^+$, $K^+$, $Mg^+$, $Na^+$ water gets Alkaline Reduced Water containing the minerals beneficial to the human body. A positive electrode side is made of the organic materials that have an anion such as chlorine (Cl), phosphorus (P), sulfur(S). This experiment uses the Alkaline Reduced Water to adjust the magnitude of the voltage of the electrolysis in the Alkaline Reduced Water. That is 1st step(pH8) 2nd step (pH8.5) 3th step (pH9), 4th step (pH9.5) in the Alkaline Reduced Water and -1st step (pH6.0), -2nd step (pH5.0) used as the acidic oxidation water. When the water passes through the three filter in this system was evaluated whether the ORP values are changed and stabilized. When about 100 liters of water passing through the filter was confirmed that the ORP values are stability and evaluation.

• Journal of the Korean Vacuum Society
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• v.20 no.4
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• pp.288-293
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• 2011

We investigated the effects of piezoelectric field on the electro-absorption characteristics in InGaN/GaN multiple-quantum well (MQW) green light emitting diodes (LED). Double crystal X-ray diffraction measurement was performed to study the crystalline property and indium (In) composition in the MQW active layer. To measure the electro-luminescence and electro-reflectance (ER) spectroscopy, we fabricated the $1{\times}1\;mm^2$ large-area green LED chip. The piezoelectric field inside the LED structure was evaluated from the Vcomp in active layer by the ER spectra. Finally, we analyzed the electro-absorption characteristics of the green LED by using the photo-current spectroscopy.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.37-42
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• 2007

We fabricated the polymer light emitting diodes (PLEDs) with ITO/PEDOT:PSS/PVK/PFO:MEH-PPV/LiF/Al structures. The effect of the thickness of PEDOT:PSS hole injection layer(HIL) on the electrical and optical properties of PLEDs was investigated. In addition, PVK hole transport layer(HTL) was introduced in the PLED device, and compared the properties of the PLEDS with and without PVX layer. All organic film layers were prepared by the spin coating method on the plasma treated ITO/glass substrates. As the thickness of PEDOT:PSS film layer decreased from about 80 nm to 50 nm, the luminance of PLED device increased from $220cd/m^2$에서 $450cd/m^2$. This may be ascribed to the increased transportation efficiency of the holes into the emission layer of PLED. The maximum current density and luminance were obtained fir the PLED device with PVX hole transport layer, showing that the current density and luminance were $268mA/cm^2\;and\;540cd/m^2$ at 12V, respectively. This values were improved by about 14% and 22% in current density and luminance compared with the PLED device without PVK layer.

• Composites Research
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• v.32 no.6
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• pp.355-359
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• 2019

The high efficient water splitting system should involve the reduction of high overpotential value, which was enhanced by the electrocatalytic reaction efficiency of catalysts, during the hydrogen evolution reaction (HER) and the oxygen evolution reaction (OER) reaction, respectively. Among them, transition metal-based compounds (oxides, sulfides, phosphides, and nitrides) are attracting attention as catalyst materials to replace noble metals that are currently commercially available. Herein, we synthesized optimal monodisperse Co₃[Co(CN)₆]₂ PBAs by FESEM, and confirmed crystallinity by XRD and FT-IR, and thermal behavior of PBAs via TG-DTA. Also, we synthesized monodispersed Co₃O₄ nanocubes by calcination of Co₃[Co(CN)₆]₂ PBAs, confirmed the crystallinity by XRD, and proceeded OER measurement. Finally, the synthesized Co₃O₄ nanocubes showed a low overpotential of 312 mV at a current density of 10 mA·cm^-2 with a low Tafel plot (96.6 mV·dec^-1).

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.61-66
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• 2018

This research scrutinizes the self-annealing characteristics of copper used to metal interconnection for application of DRAM fabrication process. As the time goes after the copper deposited, the grain of copper is growing. It is called self-annealing. We use the electroplating method for copper deposition and estimate two kinds of electroplating chemicals having different organic additives. As the time of self-annealing is elapsed, sheet resistance decreases with logarithmic dependence of time and is finally saturated. The improvement of sheet resistance is approximately 20%. The saturation time of experimental sample is shorter than that of reference sample. We can find that self-annealing is highly efficient in grain growth of copper through the measurement of TEM analysis. The structure of copper grain is similar to the bamboo type useful for current flow. The results of thermal excursion characteristics show that the reliability of self-annealed sample is better than that of sample annealed at higher temperature. The self-annealed sample is not contained in hillock. The self-annealed samples grow until $2{\mu}m$ and develop in [100] direction more favorable for reliability.