• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1433-1436
• /
• 2007

Using a blue emitting DPVBi material and red dopant DCJTB, WOLEDs with and without green emitter C6 added in ETL or HTL have been fabricated. The chromaticity color index of WOLEDs without C6 depends strongly on the doping concentration. In addition, manipulating thickness of emitting layer is similar effect such as controlling weight concentration of dopant. While the white color of WOLEDs with C6 added in ETL or HTL depend on position of C6. WOLED of three colors added green dye have been shown turn-on voltage of 3.25V, and EL efficiency 3.05cd/A @9V, $8102\;cd/m^2$, CIE coordinates (0.30, 0.32).

• Journal of Information Display
• /
• v.12 no.4
• /
• pp.213-217
• /
• 2011

Printing technologies were applied to fabricate a flexible organic thin-film transistor (OTFT) backplane for electrophoretic displays (EPDs). Various printing processes were adopted to maximize the figures of each layer of OTFT: screen printing combined with reverse offset printing for the gate electrodes and scan bus lines with Ag ink, inkjet for the source/drain electrodes with glycerol-doped Poly (3,4-ethylenedioxythiophene): Poly (styrenesulfonate) (PEDOT:PSS), inkjet for the semiconductor layer with Triisopropylsilylethynyl (TIPS)-pentacene, and screen printing for the pixel electrodes with Ag paste. A mobility of $0.44cm^2/V$ s was obtained, with an average standard deviation of 20%, from the 36 OTFTs taken from different backplane locations, which indicates high uniformity. An EPD laminated on an OTFT backplane with $190{\times}152$ pixels on an 8-in panel was successfully operated by displaying some patterns.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.351-352
• /
• 2008

A new high efficient red PhOLED using a host of $Bebq_2$ and double dopants of $(pq)_2$Ir(acac) and SEC-R411 have been fabricated and evaluated. The device doubly doped with $(pq)_2$Ir(acac) and SFC-R411 showed the current efficiency improvement of 22% under a luminance of 10000 cd/$m^2$ in comparision with the device singly doped with SFC-R411. The luminance, current efficiency and central wavelength of the doubly doped device were 9300 cd/$m^2$ at 7V, 11.1 cd/A under a luminance of 10000 cd/$m^2$ and 625 nm, respectively.

• Proceedings of the KIEE Conference
• /
• 2008.07a
• /
• pp.1274-1274
• /
• 2008

In this report, the effect of substrate temperature on the electrical properties of ink-jet printed triisopropylsilyl (TIPS) pentacene organic thin-film transistors (OTFTs) has been investigated. The electrical properties such as mobility and on/off ratio were decreased as the substrate was heated above room temperature. The field-effect mobility of decreased from $10^{-2}cm^2/Vs$ to $10^{-5}cm^2/Vs$ and the on/off ratio decreased from $10^6$ to $10^4$ when the substrate temperature was heated from room temperature to 60$^{\circ}C$.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2010.05a
• /
• pp.17.2-17.2
• /
• 2010

Printed electronics is an emerging technology to realize various microelectronic devices via a cost-effective method. Here we demonstrated a high performance of p-channel and n-channel top-gate/bottom contact polymer field-effect transistors (FETs), and applications to elementary organic complementary inverter and ring oscillator circuits by inkjet processing. We could obtained high field-effect mobility more than $0.4\;cm^2/Vs$ for both of p-channel and n-channel FETs, and successfully measured inkjet-printed polymer inverters. The performance of devices highly depends on the selection of dielectrics, printing condition and device architecture. Optimized CMOS ring oscillators with p-type and n-type polymer transistors showed as high as 50 kHz operation frequency. This research was financially supported by development of next generation RFID technology for item level applications (2008-F052-01) funded by the ministry of knowledge economy (MKE).

• Journal of the Korean Society for Precision Engineering
• /
• v.18 no.2
• /
• pp.90-95
• /
• 2001

f-$\theta$len is one of the important parts in Laser Scanning Unit because it affects on the optical performance of Laser Scanning Unit dominantly. It is necessary to find out the relationship between the surface profile error of f-$\theta$lens and the beam profile focusing on the Organic Photo Conductive drum in order to analysis the beam profile problems such as appearance of side lobe and expansion of center lobe. In this research, a simulation process which relates the surface profile characteristics to the beam profile has been developed by CODE V. The simulated beam profile also have been compared with the measurement results.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.192-192
• /
• 2012

The next generation electronics need to not only be smaller but also be more flexible. To meet such demands, electronic devices using two dimensional (2D) atomic crystals like graphene, hexagonal boron nitride (h-BN), molybdenum disulfate ($MoS_2$) and organic thin film have been studied intensely. In this talk, I will demonstrate the $MoS_2$ field effect transistor (FET) toward performance enhancement by insulating h-BN substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.29-29
• /
• 2008

Realization of electronics with performance equal to established technologies that use rigid semiconductor wafers, but in lightweight, foldable and stretchable formats would enable many new application possibilities. Examples include wearable systems for personal health monitoring, 'smart' surgical gloves with integrated electronics and electronic eye type imagers that incorporate focal plane arrays on hemispherical substrates. Circuits that use organic or certain classes of inorganic electronic materials on plastic or steel foil substrates can provide some degree of mechanical flexibility, but they cannot be folded or stretched. Also, with few exceptions such systems offer only modest electrical performance. In this talk, I will present a new approach to high performance, flexible and stretchable integrated circuits. These systems combine single-crystal silicon nanoribbons with thin plastic or elastomeric substrates using both "top-down" and "transfer-printing" technologies. The strategies represent promising routes to high performance, flexible and stretchable optoelectronic devices that can incorporate established, high performance inorganic electronic materials.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.192-195
• /
• 2009

We developed highly efficient blue PHOLEDs with reduced roll-off by using a mixed host structure. The balanced charge carrier injection and the distributed recombination zone within emissive layer resulted in a highly stable efficiency roll-off with quantum efficiencies of 20.1 and 18.1 % at a luminance of 1000 and 10000 cd/$m^2$.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.871-874
• /
• 2007

We have synthesized a novel fully soluble and low-temperature processable polyimide gate insulator (KSPI) through one-step condensation polymerization. For the preparation of KSPI, 5- (2,5-dioxytetrahydrofuryl)-3-methly-3-cyclohexene- 1,2-dicarboxylic anhydride (DOCDA) and 4,4- diaminodiphenylmethane (MDA) were used as monomers and fully imidized KSPI was completely soluble in organic solvents like ${\gamma}-butyrolactone$ and 2-butoxyethanol, etc.