Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)

The Korean Vacuum Society (한국진공학회)
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Atomic Layer $MoS_2$ Field-effect Transistors on Hexagonal Boron Nitride Substrate

  • Yu, Yeong-Jun (Creative Research Center for Graphene Electronics, Electronics and Telecommunications Research Institute (ETRI)) ;
  • Lee, Gwan-Hyeong (Department of Mechanical Engineering, Columbia University) ;
  • Hone, James (Department of Mechanical Engineering, Columbia University) ;
  • Kim, Philip (Department of Physics, Columbia University)
  • Published : 2012.02.08
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Abstract

The next generation electronics need to not only be smaller but also be more flexible. To meet such demands, electronic devices using two dimensional (2D) atomic crystals like graphene, hexagonal boron nitride (h-BN), molybdenum disulfate ($MoS_2$) and organic thin film have been studied intensely. In this talk, I will demonstrate the $MoS_2$ field effect transistor (FET) toward performance enhancement by insulating h-BN substrate.

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