• 제목/요약/키워드: Organic dielectric

검색결과 411건 처리시간 0.027초

High Resolution Electrodes Fabrication for OTFT Array by using Microcontact Printing and Room Temperature Process

  • Jo, Jeong-Dai;Choi, Ju-Hyuk;Kim, Kwang-Young;Lee, Eung-Sug;Esashi, Masayoshi
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.186-189
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    • 2006
  • The flexible organic thin film transistor (OTFT) array to use as a switching device for an organic light emitting diode (OLED) was designed and fabricated in the microcontact printing and room temperature process. The gate, source, and drain electrode patterns of OTFT were fabricated by microcontact printing process. The OTFT array with dielectric layer and organic active semiconductor layer formed at room temperature or at a temperature lower than $40^{\circ}C$. The microcontact printing process using SAM and PDMS stamp made it possible to fabricate OTFT arrays with channel lengths down to even submicron size, and reduced the fabrication process by 10 steps compared with photolithography. Since the process was done in room temperature, there was no pattern shrinkage, transformation, and bending problem appeared. Also, it was possible to improve electric field mobility, to decrease contact resistance, to increase close packing of molecules by SAM, and to reduce threshold voltage by using a big dielectric.

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Pentacene을 활성층으로 이용한 유기 TFT의 특성 연구 (Study on the Characteristics of Organic TFT Using Pentacene as a Active Layer)

  • 김영관;손병청;김윤명;표상우
    • 한국응용과학기술학회지
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    • 제18권3호
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    • pp.191-196
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    • 2001
  • Organic semiconductors based on vacuum-deposited films of fused-ring polycyclic aromatic hydrocarbon have great potential to be utilized as an active layer for electronic and optoelectronic devices. In this study, pentacene thin films and electrode materials were deposited by Organic Molecular Beam Deposition (OMBD) and vacuum evaporation respectively. For the gate dielectric layer, photoacryl (OPTMER PC403 from JSR Co.) was spin-coated and cured at $220^{\circ}C$. Electrical characteristics of the device were investigated, where the channel length and width was 50 ${\mu}m$ and 5 mm. It was found that field effect mobility was 0.039 $cm^{2}V^{-1}s^{-1}$, threshold voltage was -8 V, and on/off current ratio was $10^{6}$. Further details will be discussed.

Electrical Effects of the Adhesion Layer Using the VDP Process on Dielectric

  • Lee, Dong-Hyun;Pyo, Sang-Woo;Hyung, Gun Woo;Kim, Young-Kwan
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1313-1316
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    • 2005
  • In the present paper, it was investigated that adhesion layer on gate insulator could affect the electrical characteristics for the organic thin film transistors (OTFTs). The polyimide (PI) as organic adhesion layer was fabricated by using the vapor deposition polymerization (VDP) processing . It was found that electrical characteristics improved comparing OTFTs using adhesion layer to another. We researched adhesion layer as a function of thickness. For inverted-staggered top contact structure, field effect mobility, threshold voltage, and on-off current ratio of OTFTs using adhesion layer of PI 15 nm thickness on the gate insulator with a thickness of 0.2 ${\mu}m$ were about 0.5 $cm^2/Vs$, -0.8 V, and $10^6$, respectively.

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Dissolution Characteristics of Copper Oxide in Gas-liquid Hybrid Atmospheric Pressure Plasma Reactor Using Organic Acid Solution

  • Kwon, Heoung Su;Lee, Won Gyu
    • 공업화학
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    • 제33권2호
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    • pp.229-233
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    • 2022
  • In this study, a gas-liquid hybrid atmospheric pressure plasma reactor of the dielectric barrier discharge method was fabricated and characterized. The solubility of copper oxide in the organic acid solution was increased when argon having a larger atomic weight than helium was used during plasma discharge. There was no significant effect of mixing organic acid solutions under plasma discharge treatment on the variation of copper oxide's solubility. As the applied voltage for plasma discharge and the concentration of the organic acid solution increased, the dissolution and removal power of the copper oxide layer increased. Solubility of copper oxide was more affected by the concentration in organic acid solution rather than the variation of plasma applied voltage. The usefulness of hybrid plasma reactor for the surface cleaning process was confirmed.

유기전계효과 트랜지스터의 반도체/고분자절연체 계면에 발생하는 비가역적 전하트래핑에 관한 연구 (Irreversible Charge Trapping at the Semiconductor/Polymer Interface of Organic Field-Effect Transistors)

  • 임재민;최현호
    • 접착 및 계면
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    • 제21권4호
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    • pp.129-134
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    • 2020
  • 공액분자반도체와 고분자절연체 계면에서 전하트래핑을 이해하는 것은 장시간 구동가능한 안정성 높은 유기전계효과 트랜지스터(이하 유기트랜지스터) 개발을 위해 중요하다. 본 연구에서는 다양한 분자량의 고분자절연체를 이용한 유기트랜지스터의 전하이동 특성을 평가하였다. Polymethyl methacrylate (PMMA) 표면 위에 적층된 펜타센 공액반도체의 모폴로지와 결정성은 PMMA 분자량에 무관함이 나타났다. 그 결과 트랜지스터 소자의 초기 트랜스퍼 곡선과 전하이동도는 분자량에 상관없었다. 하지만, 적정한 상대습도 환경에서 소자에 바이어스가 인가되었을 경우, 바이어스 스트레스 효과로 불리는 드레인전류 감소와 트랜스퍼 곡선 이동은 PMMA 분자량이 감소할수록 증대됨이 관찰되었다(분자량 효과). 분자량 효과에 의한 전하트래핑은 회복이 매우 어려운 비가역적인 과정임을 밝혀 내었다. 이러한 분자량 효과는 PMMA 존재하는 고분자사슬 말단의 밀도 변화에 의한 것으로 판단된다. 즉, PMMA 고분자사슬 말단이 가지는 자유부피가 전하트랩으로 작용하여 분자량에 민감한 바이어스 스트레스 효과를 일으킨 것으로 판단된다.

Bi4Ti3O12 박막의 구조적 특성과 유전 특성에 미치는 산소 열처리 효과 (Effects of Oxygen Annealing on the Structural Properties and Dielectric Properties Of Bi4Ti3O12 Thin Films)

  • 차유정;성태근;남산;정영훈;이영진;백종후
    • 한국전기전자재료학회논문지
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    • 제22권4호
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    • pp.290-296
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    • 2009
  • $Bi_{4}Ti_{3}O_{12}$ (BiT) thin films were grown on the Pt/Ti/$SiO_2$/si substrate using a metal organic decomposition (MOD) method. Effects of oxygen annealing on the structural properties and dielectric properties of the BiT thin films were investigated. The BiT films were well developed when rapid thermal annealed at $>500^{\circ}C$ in oxygen ambient. For the film annealed at $700^{\circ}C$, no crystalline phase was observed under oxygen free annealing atmosphere while its crystallinity was significantly enhanced as the oxygen pressure increased. The BiT film also exhibited a smooth surface with defect free grains. A high dielectric constant and a low dielectric loss were achieved satisfactory in the frequency range from 75 kHz to 1 MHz. Especially, the BiT film, annealed at $700^{\circ}C$ and 10 torr oxygen pressure, showed good dielectric properties: dielectric constant of 51 and dielectric loss of 0.2 % at 100 kHz. Its leakage current was also considerably improved, being as $0.62\;nA/cm^2$ at 1 V. Therefore, it is considered that the oxygen annealing has effects on an enhancement of crystallinity and dielectric properties of the BiT films.

Dielectric and Pyroelectric Properties of Dy-doped BSCT Thick Films by Screen-printing Method

  • Noh, Hyun-Ji;Lee, Sung-Gap;Nam, Sung-Pill
    • Journal of Electrical Engineering and Technology
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    • 제4권4호
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    • pp.527-530
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    • 2009
  • $(Ba_{0.57}Sr_{0.33}Ca_{0.10})TiO_3$(=BSCT) powders, prepared by the sol-gel method, were doped using $MnCO_3$ as the acceptor and $Dy_2O_3$ as the donor. This powder was mixed with an organic vehicle. BSCT thick films were fabricated by the screen-printing techniques on the alumina substrate. The structural and dielectric properties of BSCT thick films were investigated with variation of the $Dy_2O_3$ amount. As a result of the differential thermal analysis (DTA), the exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All the BSCT thick films showed the XRD patterns of a typical polycrystalline perovskite structure. The average grain size of BSCT thick films decreased with an increasing amount of $Dy_2O_3$. The relative dielectric constant and dielectric loss of the BSCT thick film doped $Dy_2O_3$ 0.1mol% were 4637.4 and 1.6% at 1kHz, respectively.

Dielectric Properties of Zr-doped (Ba,Sr,Ca)TiO3 Thick Films for Microwave Phase Shifters

  • Lee, Sung-Gap;Lee, Sang-Heon
    • Transactions on Electrical and Electronic Materials
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    • 제4권2호
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    • pp.24-28
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    • 2003
  • (Ba,Sr,Ca)TiO$_3$ powders, prepared by the sol-gel method, were mixed with organic binder and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. All the BSCT thick films, sintered at 1420$^{\circ}C$, showed the typical XRD patterns of a perovskite polycrystalline structure. The average grain sizes decreased with increasing amounts of ZrO$_2$, and the BSCT(40/40/20) thick films doped with 2wt% MnO$_2$ showed a value of 8$\mu\textrm{m}$. The thickness of thick films by four-cycle on printing/drying was approximately 951$\mu\textrm{m}$. The relative dielectric constant decreased with increasing Ca content and MnO$_2$ doping amount. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) thick films doped with 2.0wt% ZrO$_2$ were 772, 0.184% and 15.62%, respectively.

인지질 유기단분자막의 알킬체인에 의한 유전완화시간 (Dielectric Relaxation Time for Alkyl Chain of Phospolipid Organic Monolayers Film)

  • 송진원;조수영;김영근;이경섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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    • pp.111-115
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    • 2004
  • In this paper, evaluation of physical properties about dielectric relaxation phenomena by the detection of the surface pressures and displacements current on the monolayer films of phospolipid monomolecular DLPC, DMPC using pressure stimulus. As a result, the changed surface pressure, displacement current and the transition forms of dipole moment of phospolipid monomolecular in area per molecular by pressure stimulus were conformed well. It was known that the monolayers by linear relationship for decision of dielectric relaxation time between compressure speed $\alpha$ and molecule area $A_m$ By according to the linear relationship relation get that frictional constant $\xi$, DLPC was $1.89{\times}10^{-19}$[Js] and DMPC was $0.722{\times}10^{-19}$[Js]. It is found that the phospolipid monolayer of dielectric relaxation takes a little time and depend on the molecular area.

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Dependence of Dielectric Layer and Electrolyte on the Driving Performance of Electrowetting-Based Liquid Lens

  • Lee, June-Kyoo;Park, Kyung-Woo;Kim, Hak-Rin;Kong, Seong-Ho
    • Journal of Information Display
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    • 제11권2호
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    • pp.84-90
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    • 2010
  • This paper presents the effects of a dielectric layer and an electrolyte on the driving performance of an electrowetting on dielectric (EWOD)-based liquid lens. The range of tunable focal length of the EWOD-based liquid lens was highly dependent on the conditions of the dielectric layer, which included an inorganic oxide layer and an organic hydrophobic layer. Moreover, experiments on the physical and optical durability of electrolyte by varying temperature conditions, were conducted and their results were discussed. Finally, the lens with a truncated-pyramid silicon cavity having a sidewall dielectrics and electrode was fabricated by anisotropic etching and other micro-electromechanical systems (MEMS) technologies in order to demonstrate its performance. The lens with $0.6-{\mu}m$-thick $SiO_2$ layer and 10 wt% LiCl-electrolyte exhibited brilliant focal-length tunability from infinity to 3.19 mm.