• Journal of Adhesion and Interface
• /
• v.23 no.2
• /
• pp.53-58
• /
• 2022

Here, the surface characteristics of the dielectric were controlled by introducing the self-assembled monolayers (SAMs) as the intermediate layers on the surface of the AlOx dielectric, and the electrical performances of the organic charge modulated transistor (OCMFET) were significantly improved. The organic intermediate layer was applied to control the surface energy of the AlOx gate dielectric acting as a capacitor plate between the control gate (CG) and the floating gate (FG). By applying the intermediate layers on the gate dielectric surface, and the field-effect mobility (μ_OCMFET) of the OCMFET devices could be efficiently controlled. We used the four kinds of SAM materials, octadecylphosphonic acid (ODPA), butylphosphonic acid (BPA), (3-bromopropyl)phosphonic acid (BPPA), and (3-aminopropyl)phosphonic acid (APPA), and each μ_OCMFET was measured at 0.73, 0.41, 0.34, and 0.15 cm2V-1s-1, respectively. The results could be suggested that the characteristics of each organic SAM intermediate layer, such as the length of the alkyl chain and the type of functionalized end-group, can control the electrical performances of OCMFET devices and be supported to find the optimized fabrication conditions, as an efficient sensing platform device.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.341.1-341.1
• /
• 2014

In the advanced material for the next generation display device, transparent amorphous oxide semiconductors (TAOS) are promising materials as a channel layer in thin film transistor (TFT). The TAOS have many advantages for large-area application compared with hydrogenated amorphous silicon TFT (a-Si:H) and organic semiconductor TFT. For the reasonable characteristics of TAOS, The a-IGZO has the excellent performances such as low temperature fabrication (R.T~), high mobility, visible region transparent, and reasonable on-off ratio. In this study, we investigated how the electric characteristics and physical properties are changed as various oxygen ratio when magnetron sputtering. we analysis a-IGZO film by AFM, EDS and I-V measurement. decreasing the oxygen ratio, the threshold voltage is shifted negatively and mobility is increasing. Through this correlation, we confirm the effect of oxygen ratio. We fabricated the bottom-gate a-IGZO TFTs. The gate insulator, SiO2 film was grown on heavily doped silicon wafer by thermal oxidation method. a-IGZO channel layer was deposited by RF magnetron sputtering. and the annealing condition is $350^{\circ}C$. Electrode were patterned Al deposition through a shadow mask(160/1000 um).

• Bulletin of the Korean Chemical Society
• /
• v.33 no.2
• /
• pp.492-498
• /
• 2012

A hyper branched 10-butylphenothiazine with in-situ thermally curable methacrylate (1,3,5-tris-[$\{$10-Butyl-3-(4-(2-methyl-acryloyloxy)-phenyl)-7-yl-10H-phenothiazine$\}$]-benzene, (tris-PTMA)) was synthesized successfully. From the TGA thermogram of tris-PTMA was thermally stable up to $336^{\circ}C$. In the first heating scan of DSC thermogram, tris-PTMA showed glass transition temperature (Tg) at $140^{\circ}C$ and broad endothermic process in the region of $144-179^{\circ}C$, which is thermally curing temperature. In the second heating process, $T_g$ exhibited at $158.7^{\circ}C$ and endothermic process was not observed. Thermally cured tris-PTMA showed no big change in the UV-visible spectrum after washing with organic solvent such as methylene chloride, chloroform, toluene, indicating that thermally cured film was very good solvent resistance. Thermally cured tris-PTMA was electrochemically stable and the HOMO energy level of tris-PTMA was -5.54 eV. The maximum luminance efficiency of double layer structured polymer light-emitting diode based on in-situ thermally cured tris-PTMA was 0.685 cd/A at 16.0 V, which was higher than that of the device without thermally cured tris-PTMA (0.348 cd/A at 15.0 V).

• Journal of the Korean Electrochemical Society
• /
• v.10 no.2
• /
• pp.94-103
• /
• 2007

The transition of interconnection metal from aluminum alloy to copper has been introduced to meet the requirements of high speed, ultra-large scale integration, and high reliability of the semiconductor device. Since copper, which has low electrical resistivity and high resistance to degradation, has different electrical and material characteristics compared to aluminum alloy, new related materials and processes are needed to successfully fabricate the copper interconnection. In this review, some important factors of multilevel copper damascene process have been surveyed such as diffusion barrier, seed layer, organic additives for bottom-up electro/electroless deposition, chemical mechanical polishing, and capping layer to introduce the related issues and recent research trends on them.

• Journal of the Korean Wood Science and Technology
• /
• v.34 no.4
• /
• pp.22-30
• /
• 2006

The volatile organic compound (VOC) Analyzer is a portable device to measure the four main aromatic hydrocarbon gases: toluene, ethylbenzene, xylene and styrene. With the VOC Analyzer, a semiconductor gas sensor eliminates the need for the carrier gas which is required for conventional gas chromatographs. In addition, since the semiconductor gas sensor is supersensitive to gas components, it is not necessary to use a conventional gas concentrator or other complicated equipment. Compared with other measurement methods, the VOC analyzer is useful for measuring toluene, ethylbenzene, xylene and styrene in wood-based panel because of its ease in obtaining field results and repeating the test. The VOC Analyzer primarily measures four VOC in the air. In this study, we designed a test method of VOC measurement for particle board. A specimen was sealed in 3L polyester bag, after 96hours we could measure maximum VOC emission level that is a stabilized VOC Value. For easy, fast and economic testing of TVOC emission from wood-based panel, we developed the test method with the VOC Analyzer. The VOC Analyzer is expected to gain widespread use in the manufacturing field where a quick and easy test for VOC emission from wood-based panel is required. Furthermore, the VOC Analyzer promises to become an easier, faster and more economic technique than the currently used standard methods.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.31 no.4
• /
• pp.149-153
• /
• 2021

ε-Ga₂O₃ thin films were grown on 4H-SiC substrates by metal organic chemical vapor deposition (MOCVD) and crystalline quality were evaluated depend on growth conditions. It was found that the best conditions of the ε-Ga₂O₃ were grown at a growth temperature of 665℃ and an oxygen flow rate of 200 sccm. Two-dimensional growth was completed after the merge of hexagonal nuclei, and the arrangement direction of hexagonal nuclei was closely related to the crystal direction of the substrate. However, it was confirmed that crystal structure of the ε-Ga₂O₃ had an orthorhombic rather than hexagonal. Crystal phase transformation was performed by thermal treatment. And a β-Ga₂O₃ thin film was grown directly on 4H-SiC for the comparison to the phase transformed β-Ga₂O₃ thin film. The phase transformed β-Ga₂O₃ film showed better crystal quality than directly grown one.

• Journal of the Microelectronics and Packaging Society
• /
• v.24 no.4
• /
• pp.31-37
• /
• 2017

Recently, there has been substantial interest in flexible and wearable devices whose properties and performances are close to conventional devices on hard substrates. Despite the advancement on flexible devices with organic semiconductors or carbon nanotube films, their performances are limited by the carrier scattering at the molecular to molecular or nanotube-to-nanotube junctions. Here in this study, we demonstrate on the vertical semiconductor crystal array embedded in flexible polymer matrix. Such structures can relieve the strain effectively, thereby accommodating large flexural deformation. To achieve such structure, we first established a low-temperature solution-phase synthesis of single crystalline 3D architectures consisting of epitaxially grown ZnO constituent crystals by position and growth direction controlled growth strategy. The ZnO vertical crystal array was integrated into a piece of polydimethylsiloxane (PDMS) substrate, which was then mechanically detached from the hard substrate to achieve the freestanding ZnO-polymer composite. In addition, the characteristics of transferred ZnO were confirmed by additional structural and photoluminescent measurements. The ZnO vertical crystal array embedded in PDMS was further employed as pressure sensor that exhibited an active response to the external pressure, by piezoelectric effect of ZnO crystal.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.45 no.5
• /
• pp.19-25
• /
• 2008

In this study, we fabricated Organic Thin Film Transistors(OTFTs) with $C_{60}$ hole injection layer between organic semiconductor(pentacene) and metal electrode, and we compared the electrical characteristics of OTFTs with/without $C_{60}$. When the $C_{60}$ hole injection layer was introduced, the mobility and the threshold voltage were improved from 0.298 $cm^2/V{\cdot}s$ and -13.3V to 0.452 $cm^2/V{\cdot}s$ and -10.8V, and the contact resistance was also reduced. When the $C_{60}$ is inserted, the hole injection was enhanced because the $C_{60}$ prevent the unwanted chemical reaction between pentacene and Au. Furthermore, we fabricated the OTFTs using Al as their electrodes. When the OTFTs were made by only aluminum electrode, the channel were not mostly made because of the high hole injection barrier between pentacene and aluminum, but when the $C_{60}$ layer with an optimal thickness was applied between aluminum and pentacene, the device performances were obviously enhanced because of the vacuum energy level shift of Al and the consequent decrease of the hole injection barrier which was induced by the interface dipole formation between $C_{60}$ and Al. The mobility and $I_{ON}/I_{OFF}$ current ratio of OTFT with $C_{60}/Al$ electrode were 0.165 $cm^2/V{\cdot}s$ and $1.4{\times}10^4$ which were comparable with the normal Au electrode OTFT.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.993-994
• /
• 2008

Electrochromic (EC) devices are capable of reversibly changing their optical properties upon charge injection and extraction induced by the external voltage. The characteristics of the EC device, such as low power consumption, high coloration efficiency, and memory effects under open circuit status, make them suitable for use in a variety of applications including smart windows and electronic papers. Coloration due to reduction or oxidation of redox chromophores can be used for EC devices (e-paper), but the switching time is slow (second level). Recently, with increasing demand for the low cost, lightweight flat panel display with paper-like readability (electronic paper), an EC display technology based on dye-modified $TiO_2$ nanoparticle electrode was developed. A well known organic dye molecule, viologen, was adsorbed on the surface of a mesoporous $TiO_2$ nanoparticle film to form the EC electrode. On the other hand, ZnO is a wide bandgap II-VI semiconductor which has been applied in many fields such as UV lasers, field effect transistors and transparent conductors. The bandgap of the bulk ZnO is about 3.37 eV, which is close to that of the $TiO_2$ (3.4 eV). As a traditional transparent conductor, ZnO has excellent electron transport properties, even in ZnO nanoparticle films. In the past few years, one-dimension (1D) nanostructures of ZnO have attracted extensive research interest. In particular, 1D ZnO nanowires renders much better electron transportation capability by providing a direct conduction path for electron transport and greatly reducing the number of grain boundaries. These unique advantages make ZnO nanowires a promising matrix electrode for EC dye molecule loading. ZnO nanowires grow vertically from the substrate and form a dense array (Fig. 1). The ZnO nanowires show regular hexagonal cross section and the average diameter of the ZnO nanowires is about 100 nm. The cross-section image of the ZnO nanowires array (Fig. 1) indicates that the length of the ZnO nanowires is about $6\;{\mu}m$. From one on/off cycle of the ZnO EC cell (Fig. 2). We can see that, the switching time of a ZnO nanowire electrode EC cell with an active area of $1\;{\times}\;1\;cm^2$ is 170 ms and 142 ms for coloration and bleaching, respectively. The coloration and bleaching time is faster compared to the $TiO_2$ mesoporous EC devices with both coloration and bleaching time of about 250 ms for a device with an active area of $2.5\;cm^2$. With further optimization, it is possible that the response time can reach ten(s) of millisecond, i.e. capable of displaying video. Fig. 3 shows a prototype with two different transmittance states. It can be seen that good contrast was obtained. The retention was at least a few hours for these prototypes. Being an oxide, ZnO is oxidation resistant, i.e. it is more durable for field emission cathode. ZnO nanotetropods were also applied to realize the first prototype triode field emission device, making use of scattered surface-conduction electrons for field emission (Fig. 4). The device has a high efficiency (field emitted electron to total electron ratio) of about 60%. With this high efficiency, we were able to fabricate some prototype displays (Fig. 5 showing some alphanumerical symbols). ZnO tetrapods have four legs, which guarantees that there is one leg always pointing upward, even using screen printing method to fabricate the cathode.

• Korean Journal of Materials Research
• /
• v.20 no.11
• /
• pp.600-605
• /
• 2010

In order to meet the requirements of faster speed and higher packing density for devices in the field of semiconductor manufacturing, the development of Cu/Low k device material is explored for use in multi-layer interconnection. SiOC(-H) thin films containing alkylgroup are considered the most promising among all the other low k candidate materials for Cu interconnection, which materials are intended to replace conventional Al wiring. Their promising character is due to their thermal and mechanical properties, which are superior to those of organic materials such as porous $SiO_2$, SiOF, polyimides, and poly (arylene ether). SiOC(-H) thin films containing alkylgroup are generally prepared by PECVD method using trimethoxysilane as precursor. Nano voids in the film originating from the sterichindrance of alkylgroup lower the dielectric constant of the film. In this study, methyltriphenylsilane containing bulky substitute was prepared and characterized by using NMR, single-crystal X-ray, GC-MS, GPC, FT-IR and TGA analyses. Solid-state NMR is utilized to investigate the insoluble samples and the chemical shift of $^{29}Si$. X-ray single crystal results confirm that methyltriphenylsilane is composed of one Si molecule, three phenyl rings and one methyl molecule. When methyltriphenylsilane decomposes, it produces radicals such as phenyl, diphenyl, phenylsilane, diphenylsilane, triphenylsilane, etc. From the analytical data, methyltriphenylsilane was found to be very efficient as a CVD or PECVD precursor.