• 한국재료학회지
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• 제16권5호
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• pp.302-307
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• 2006

The formation and processing of organic insulators on the device performance have been studied in the fabrication of organic thin film transistors (OTFTs). The series of polyvinyls, poly-4-vinyl phenol(PVP) and polyvinyltoluene (PVT), were used as solutes and propylene glycol monomethyl ether acetate(PGMEA) as a solvent in the formation of organic insulators. The cross-linking of organic insulators was also attempted by adding the thermosetting material, poly (melamine-co-formaldehyde) as a hardener in the compound. The electrical characteristics measured in the metal-insulator-metal (MIM) structures showed that insulating properties of PVP layers were generally superior to those of PVT layers. Among the layers of PVP series: PVP(10 wt%) copolymer, 5 wt% cross-linked PVP(10 wt%), PVP(20 wt%) copolymer, 5 wt% cross-linked PVP(20 wt%) and 10 wt% cross-linked PVP(20 wt%), the 10 wt% cross-linked PVP(20 wt%) layer showed the lowest leakage current characteristics. Finally, inverted staggered OTFTs using the PVP(20 wt%) copolymer, 5 wt% cross-linked PVP(20 wt%) and 10 wt% cross-linked PVP(20 wt%) as gate insulators were fabricated on the polyether sulphone (PES) substrates. In our experiments, we could obtain the maximum field effect mobility of 0.31 $cm^2/Vs$ in the device from 5 wt% cross-linked PVP(20 wt%) and the highest on/off current ratio of $1.92{\times}10^5$ in the device from 10 wt% cross-linked PVP(20 wt%).

• 한국응용과학기술학회지
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• 제20권2호
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• pp.148-153
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• 2003

Electron transfer through an Langmuir-Blodgett(LB) monolayer film sandwiched between metal electrodes. We used an eicosanoic acid material and the material was very famous as a thin film insulating material. Eicosanoic acid monolayer was deposited by Langmuir-Blodgett(LB) technique and a subphase was a $CdCl_2$ solution as a 2${\times}10^{-4}$ mol/L. Also we used a bottom electrode as an Al/$Al_2O_3$ and a top electrode as a Al and Ti/Al. Here, the $Al_2O_3$ on the bottom electrode was deposited by thermal evaporation method. The $Al_2O_3$ layer was acted on a tunneling barrier and insulating layer in tunnel diode. It was found that the proper transfer surface pressure for film deposition was 25 mN/m and the limiting area per molecule was about 24 ${\AA}^2$/molecule. When the positive and negative bias applied to the molecular device, the behavior shows that a tunnel switching characteristics. This result were analyzed regarding various mechanisms.

• 한국전기전자재료학회논문지
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• 제22권12호
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• pp.1063-1066
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• 2009

In this study, we fabricated pentacene organic thin film trasistors(OTFTs) which used aluminum oxide as the gate insulator. Aluminum oxide for OTFTs was deposited on glass substrate with a different deposition rate by E-beam evaporation. In case of the deposition rate of $0.1\;{\AA}$, the fabricated aluminum oxide gate insulating OTFT showed a threshold voltage of -1.36 V, an on/off current ratio of $1.9{\times}10^3$ and field effect mobility $0.023\;cm^2/V_s$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.695-698
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• 2006

The photosensitive poly-siloxane material used as the passivation layers for the conventional back channel etched (BCE) thin film transistors (TFTs) has been investigated. Through the organic material, the TFT array fabrication process can be reduced and higher aperture ratio can be achieved for higher LCD panel performance. The interface between the organic passivation layer and the back channel of the amorphous active region has been improved by the back channel oxygen treatment and the devices exhibits lower leakage current than the conventional silicon nitride passivation layer of BCE TFTs. The leakage currents between Indium-tin-oxide (ITO) pixels and the TFT devices and its mechanism have also been investigated in this paper.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.449-452
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• 2009

Ink-jet printed (IJP) self-aligned (SA) organic light emitting diodes (OLEDs) and its application to light emitting seal have investigated. Ink-jet printing of light emitting material is carried out onto transparent anode covered with insulating material. Laminated light emitting seal with SA IJP OLED without photo - lithographic process and any vacuum process, noncontact type electromagnetic power supply without electric power supply line, and light emitting tag with network type RF communication terminal by controlling display information were demonstrated.

• 반도체디스플레이기술학회지
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• 제5권1호
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• pp.39-43
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• 2006

The polyvinyl series organic films as gate insulators of thin film transistor(TFT) have been processed and characterized on the polyether sulphone (PES) substrates . The poly-4-vinyl phenol(PVP) and polyvinyl toluene (PVT) were used as solutes and propylene glycol monomethyl ether acetate(PGMEA) as a solvent in the formation of organic insulators. The cross-linking of organic insulators was also attempted by adding the thermosetting material, poly (melamine-co-formaldehyde) as a hardener in the compound. The electrical characteristics measured in the metal-insulator-metal (MIM) structures showed that insulating properties of PVP layers were generally superior to those of PVT layers. Among the layers of PVP series; copolymer PVP(10 wt%), 5wt% cross-linked PVP(10 wt%), copolymer PVP(20 wt%), 5 wt% cross-linked PVP(20 wt%) and 10 wt% cross-linked PVP(20 wt%), the 10 wt% cross-linked PVP(20 wt%) layer showed the lowest leakage current of 1.2 pA at ${\pm}10V$. The ms value of surface roughness and the capcitance per unit area are 2.41 and $1.76nF/cm^2$ in the case of 10 wt% cross-linked PVP(20 wt%) layer, respectively.

• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.820-825
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• 1998

We deposited stearic acid LB films by using Langmuir-Blodgett (LB)method and investigated anisotropy electrical conduction characteristics by I-V measurement for horizontal direction and vertical direction. Also, we measured gad response between deposited LB films and organic gas for various temperature(0~8$0^{\circ}C$) by 9MHz At-cut quartz crystal microbalance. The LB films have electrical conduction characteristics such as semiconducting and insulating properties. The is, the conductivity of LB films for the horizontal and vertical direction is about 10\ulcornerS/cm and 10\ulcorners/cm, respectively. the frequency shift of stearic acid LB films for the organic gases depended on the mass change by the surface adsorption and the inner penetration to the sensing films. The resonant frequency shift of the quartz crystal microbalance for temperature properties of LB films is thought to the effect of the rearrangement or the damage pf LB films above the melting point and the mobility increasement of the organic gas by the temperature rising.

• E2M - 전기 전자와 첨단 소재
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• 제4권3호
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• pp.229-238
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• 1991

본 논문에서는 영상센서를 이용하여 유기절연물질내의 트리 열화현상을 측정할 수 있는 시스템에 관하여 논하였다. 기존의 육안관찰법으로서는 관측하는 것이 매우 어려웠던 트리형상의 변화를 화상처리 기술을 이용하므로서 트리발생 직후부터 관측할 수 있게 되었다. 실험결과, 화상처리장치는 최초로 발생된 트리에서 부터 그 진전상황을 즉각적으로 기록할 수가 있었으며 트리의 신장도, 열화면적 및 연속 화상처리 측면에서 트리의 진전특성을 고찰하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.331-334
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• 2000

The organic electroluminescent(EL) device has gathered much interest because of its large potential in materials and simple device fabrication. We fabricated EL devices which have a blended single emitting layer containg poly(Nvinylcarbazole)[PVK] and poly(3-dodecylthiophene)[P3DoDT]. The molar ratio between P3DoDT and PVK changed with 1:0, 2:1 and 1:1. To improve the external quantum efficiency of EL devices, we applied insulating layer, LiF layer between polymer emitting layer and AI electrode. All of the devices emit orange-red light and it's can be explained that the energy transfer occurs from PVK to P3DoDT. Within the molar ratio 1:0, 2:1 and 1:1, the energy transfer was not saturated, which results in the not appearance of PVK emission in the blue region. In the voltage-current and voltage-light power characteristics of devices applied LiF layer, current and light power drastically increased with increasing with applied voltage. In the consequence of the result, the light power of the device have a molar ratio 1:1 with LiF layer was about 10 times larger than that of the device without PVK at 6V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.480-483
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• 2000

Polyimide is a well-known organic dielectric material, which has not only high chemical and thermal stability but also good electrical insulating and mechanical properties. In this research, the electrical properties of PI LB films were investigated at room temperature. At low electric field, ohmic conduction(I∝V) was observed and the calculated electrical conductivity was about 9.7$\times$10$^{-15}$ S/cm. At high electric field, conduction(I∝V$^2$) was observed and the conduction mechanism was explained by space charge limited region effect. The dielectric constant of LB film was about 7.5.