• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.6
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• pp.1174-1179
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• 2009

In this paper we develop the characteristic of density on non-uniform plasma in different layer of the semiconductor with optically controlled microwave pulses. The transient response of the microwave pulses in different plasma layer has been evaluated by calculating the variation of the reflection function of dielectric microstrip lines. The lines has used under open-ended termination containing optically induced plasma region, which has illuminated a laser source. The characteristics impedances resulting from the presence of plasma are evaluated by the transmission line model. The analyzes the variation of transient response in a 0.01cm layer near the surface for frequency range from 1GHz to 128GHz. The diffusion length LD is larger than compared to the absorption depth $l/_{\alpha}l$. The variation of characteristic response in plasma layer with microwave pulses which has in deferentially localized has been evaluated analytically.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.2 no.2
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• pp.63-68
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• 2009

We study on the transient response in non-uniform microstrip lines with optically controlled microwave pulses. The transient response of the microwave pulses in plasma layer has been evaluated by reflection function of dielectric microstrip lines. The variation of characteristic response in plasma layer with localized pulses has been evaluated analytically. Reflection the change of the reflection amplitude has been observed.

• Transactions on Electrical and Electronic Materials
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• v.10 no.4
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• pp.111-115
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• 2009

We present a study on the reflection of optically controlled microwave pulses from non uniform plasma layers in semiconductors. The transient response of the microwave pulses in different plasma layers has been evaluated by means of the reflection function of dielectric microstrip lines. The lines were used with an open-ended termination containing an optically induced plasma region, which was illuminated by a light source. The reflection characteristics impedance resulting from the presence of plasma is evaluated by means of the equivalent transmission line model. We have analyzed the variation of the transient response in a 0.01 cm layer with a surface frequency in the region of 128 GHz. In the reflection the variation of the diffusion length $L_D$ is large compared with the absorption depth $1/{\alpha}_l$. The variation of the characteristic response of the plasma layer with differentially localized pulses has been evaluated analytically. The change of the reflection amplitude has been observed at depths of 0.1 cm, 0.01 cm and $0.1{\times}10^{-5}$ cm respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.90-91
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• 2009

We study of the variation on non-uniform plasma in different layer of the semiconductor. The transient response in different plasma layer has been evaluated theoretically. The reflection function of dielectric microstrip lines resulting from the presence of plasma are evaluated by the transmission line model. The diffusion length is small compared to the absorption depth. The variation of characteristic response in plasma layer with microwave pulses which has in localized has been evaluated.

• Transactions on Electrical and Electronic Materials
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• v.10 no.2
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• pp.53-57
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• 2009

In this paper we develop a method to observe faults in semiconductor devices and transmission lines by calculating the variation of the reflection function in a dielectric microstrip line that has an open-ended termination containing an optically induced plasma region. It is analyzed with the assumption that the plasma is distributed homogeneously in laser illumination. With the non linear material of degradation, the concentration of the carrier in the part of the material has changed. Since the input wave has produced the phenomenon of reflection, the input signal to the open-ended microstrip lines can be observed on reflection to identify the location of the fault. The characteristic impedances resulting from the presence of plasma are evaluated by the transmission line model. The variation of the reflection wave in the microwave system has been calculated by using an equivalent circuit model. The transient response has been also evaluated theoretically for changing the phase of the variation in the reflection. The variation of characteristic response in differentially localized has been also evaluated analytically.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.149-150
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• 2009

In this paper we study on the semiconductor characteristic by calculating the variation of reflection function in microstrip lines, which has open-ended termination containing an optically induced plasma region. The variation of impedances resulting from the presence of plasma has evaluated with time and frequency domain. The responses have been also evaluated theoretically for changing the phase of the variation in the reflection.