• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.262.2-262.2
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• 2014

Plasma processing is an essential process for pattern etching and thin film deposition in nanoscale semiconductor device fabrication. It is necessary to maintain plasma chamber in steady-state in production. In this study, we determined plasma chamber state with residual gas analysis with self-plasma optical emission spectroscopy. Residual gas monitoring of fluorocarbon plasma etching chamber was performed with self-plasma optical emission spectroscopy (SPOES) and various chemical elements was identified with a SPOES system which is composed of small inductive coupled plasma chamber for glow discharge and optical emission spectroscopy monitoring system for measuring optical emission. This work demonstrates that chamber state can be monitored with SPOES and this technique can potentially help maintenance in production lines.

• 한국재료학회지
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• 제25권2호
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• pp.100-106
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• 2015

Plasma properties of dielectric barrier discharges (DBDs) at atmospheric pressure were measured and characterized using optical emission spectroscopy. Optical emissions were measured from argon, nitrogen, or air discharges generated at 5-9 kV using 20 kHz power supply. Emissions from nitrogen molecules were markedly measured, irrespective of discharge gases. The intensity of emission peaks was increased with applied voltage and electrode gap. The short wavelength peaks (315.9 nm and 337.1 nm) measured at the middle of DBDs were significantly increased with applied voltage. The optical emission from DBDs decreased with the addition of oxygen gas, which was especially significant in argon discharge. Emission from oxygen molecules cannot be measured from air discharge and argon discharge with 4.8% oxygen. The emission intensity at 337.1 nm and 357.7 nm related with nitrogen molecule was sensitively changed with electrode types and discharge voltages. However, the pattern of argon emission spectrum was nearly the same, irrespective of electrode type, oxygen content, and discharge voltage.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.153-153
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• 2012

Endpoint detection with plasma impedance monitoring and self-plasma optical emission spectroscopy is demonstrated for dielectric layers etching processes. For in-situ detecting endpoint, optical-emission spectroscopy (OES) is used for in-situ endpoint detection for plasma etching. However, the sensitivity of OES is decreased if polymer is deposited on viewport or the proportion of exposed area on the wafer is too small. To overcome these problems, the endpoint was determined by impedance signal variation from I-V monitoring (VI probe) and self-plasma optical emission spectroscopy. In addition, modified principal component analysis was applied to enhance sensitivity for small area etching. As a result, the sensitivity of this method is increased about twice better than that of OES. From plasma impedance monitoring and self-plasma optical emission spectroscopy, properties of plasma and chamber are analyzed, and real-time endpoint detection is achieved.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2015년도 추계학술대회 논문집
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• pp.242-243
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• 2015

Fault detection using optical emission spectra with modified K-means cluster analysis and principal component anal ysis are demonstrated for inductive coupl ed pl asma cl eaning processes. The optical emission spectra from optical emission spectroscopy (OES) are used for measurement. Furthermore, Principal component analysis and K-means cluster analysis algorithm is modified and applied to real-time detection and sensitivity enhancement for fluorocarbon cleaning processes. The proposed techniques show clear improvement of sensitivity and significant noise reduction when they are compared with single wavelength signals measured by OES. These techniques are expected to be applied to various plasma monitoring applications including fault detections as well as chamber cleaning endpoint detection.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.182-182
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• 2012

Plasma etching is used in various semiconductor processing steps. In plasma etcher, optical- emission spectroscopy (OES) is widely used for in-situ endpoint detection. However, the sensitivity of OES is decreased if polymer is deposited on viewport or the proportion of exposed area on the wafer is too small. Because of these problems, the object is to investigate the suitability of using plasma impedance monitoring (PIM) and self plasma optical emission spectrocopy (SPOES) with statistical approach for in-situ endpoint detection. The endpoint was determined by impedance signal variation from I-V monitor (VI probe) and optical emission signal from SPOES. However, the signal variation at the endpoint is too weak to determine endpoint when $SiO_2$ and SiNx layers are etched by fluorocarbon on inductive coupled plasma (ICP) etcher, if the proportion of $SiO_2$ and SiNx area on Si wafer are small. Therefore, modified principal component analysis (mPCA) is applied to them for increasing sensitivity. For verifying this method, detected endpoint from impedance monitoring is compared with optical emission spectroscopy.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2017년도 제48회 춘계학술대회논문집
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• pp.1135-1139
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• 2017

화염 내 화학종의 공간적 분포는 화염의 구조 및 연소 특성을 이해하는데 중요한 지표가 되며, 그 계측을 위해 발광분광법 (Optical emission spectroscopy)은 간단하고 비침투적인 진단 방식으로 인해 널리 활용되고 있다. 본 연구에서는 측정 line-of-sight 방향의 공간 분해 계측 목적으로 개발된 발광분광기를 이용한 로켓 플룸 내 화학종 (OH radical) 분포 계측의 가능성을 제시하였다. 발광분광기의 측정 신호로부터 바닥 상태의 화학종 농도를 예측하기 위해 화염 내 열적 여기와 화학적 여기 기작을 고려하였으며, 열적으로 여기된 종에 대해서 열적 평형 상태를 가정하였다. 또한 발광분광기의 공간 분해 성능 및 공간에 따른 수광 특성을 보정하기 위한 방법론을 제시하였다.

• Journal of Industrial and Engineering Chemistry
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• 제67권
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• pp.236-243
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• 2018

A series of $Er^{3+}/Yb^{3+}$ co-doped fluorophosphate glasses with varying $YbF_3$ concentration were prepared by a high temperature melt quenching technique. Absorption and emission cross-sections were determined by using the McCumber theory. The larger emission cross-section ($9.86{\times}10^{-21}cm^2$) and longer fluorescence lifetime (12.37 ms) were obtained for the $^4I_{13/2}{\rightarrow}^4I_{15/2}$ transition of ABS3Er4Yb glass. The sensitivity and temperature of the maximum sensitivity were evaluated by the fluorescence intensity ratio method from the measured upconversion spectra. The results were discussed and compared to the other reported glasses.

• Current Optics and Photonics
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• 제7권2호
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• pp.147-156
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• 2023

Circularly polarized (CP) emission can be achieved by integrating emissive materials into chiral metasurfaces. Such CP light sources in integrated device platforms are desirable for important potential applications. However, the exact characterization of the polarization state in CP emission may include some errors because of the unwanted polarization distortion caused by optical components (e.g., beam splitter) in the optical setup. Here, we consider CP emission measurements from chiral metasurfaces and characterize the polarization distortion caused by the beam splitter. We first detail the procedures for the Stokes parameters and Mueller matrix measurements. Then, we directly measure the Mueller matrix of the beam splitter and retrieve the original polarization state of CP emission from our metasurface sample. Using the measured Mueller matrix of the beam splitter, we specifically identify what contributes to polarization distortion in CP emission. Our work may provide useful guidelines for the characterization and compensation of polarization distortion in general Stokes parameter measurements.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.473-474
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• 2008

This paper proposes that the relative transmittance and emission intensity measured via optical emission spectroscopy (OES) is a useful for fault detection of reactive ion etch process. With the increased requests for non-invasive as well as real-time plasma process monitoring for fault detection and classification (FDC), OES is suggested as a useful diagnostic tool that satisfies both of the requirements. Relative optical transmittance and emission intensity of oxygen plasma acquired from various process conditions are directly compared with the process variables, such as RF power, oxygen flow and chamber pressure. The changes of RF power and Pressure are linearly proportional to the emission intensity while the change of gas flow can be detected with the relative transmittance.

• 동굴
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• 제78호
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• pp.29-31
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• 2007

This paper is devoted to a study of the characterization of the plasma state. For the purpose of monitoring plasma condition, we experiment on reactive ion etching (RIE) process. Without actual etch process, generated oxygen plasma, measurement of plasma emission intensity. Changing plasma process parameters, oxygen flow, RF power and chamber pressure have controlled. Using the optical emission spectroscopy (OES), we conform to the unique oxygen wavelength (777nm), the most powerful intensity region of the designated range. Increase of RF power and chamber pressure, emission intensity is increased. oxygen flow is not affect to emission intensity.