Relative Transmittance and Emission Intensity of Optical Emission Spectroscopy for Fault Detection Application of Reactive Ion Etching

Reactive Ion Etching에서 Optical Emission Spectroscopy의 투과율과 강도를 이용한 에러 감지 기술 제안

This paper proposes that the relative transmittance and emission intensity measured via optical emission spectroscopy (OES) is a useful for fault detection of reactive ion etch process. With the increased requests for non-invasive as well as real-time plasma process monitoring for fault detection and classification (FDC), OES is suggested as a useful diagnostic tool that satisfies both of the requirements. Relative optical transmittance and emission intensity of oxygen plasma acquired from various process conditions are directly compared with the process variables, such as RF power, oxygen flow and chamber pressure. The changes of RF power and Pressure are linearly proportional to the emission intensity while the change of gas flow can be detected with the relative transmittance.