• Journal of the Korean Ceramic Society
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• v.54 no.5
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• pp.349-365
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• 2017

Graphene has attracted a lot of attentions due to the unique electrical and optical properties. Compared with the noble metal plasmons in the visible and near-infrared frequencies, graphene can support surface plasmons in the lower frequencies of terahertz and mid-infrared and it demonstrates an extremely large confinement at the surface because of the particular electronic band structures. Especially, the surface conductivity of graphene can be tuned by either chemical doping or electrostatic gating. These features make graphene a promising candidate for plasmonics, biosensing and transformation optics. Furthermore, the combination of graphene and metasurfaces presents a powerful tunability for exotic electromagnetic properties, where the metasurfaces with the highly-localized fields offer a platform to enhance the interaction between the incident light and graphene and facilitate a deep modulation. In this paper, we provide an overview of the key properties of graphene, such as the surface conductivity, the propagating surface plasmon polaritons, and the localized surface plasmons, and the hybrid graphene/metasurfaces, either metallic and dielectric metasurfaces, from terahertz to near-infrared frequencies. Finally, there is a discussion for the current challenges and future goals.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.122-122
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• 2010

ZnO is a widely investigated material for the blue and ultraviolet solid-state emitters and detectors. It has been promoted due to a wide-band gap semiconductor which has large exciton binding energy of 60 meV, chemical stability and low radiation damage. However, there are many problems to be solved for the growth of p-type ZnO for practical device applications. Many researchers have made an efforts to achieve p-type conductivity using group-V element of N, P, As, and Sb. In this letter, we have studied the optical characteristics of the antimony-doped ZnO (ZnO:Sb) thin films by means of photoluminescence (PL), PL excitation, temperature-dependent PL, and time-resolved PL techniques. We observed donor-to-acceptor-pair transition at about 3.24 eV with its phonon replicas with a periodic spacing of about 72 meV in the PL spectra of antimony-doped ZnO (ZnO:Sb) thin films at 12 K. We also investigate thermal activation energy and carrier recombination lifetime for the samples. Our result reflects that the antimony doping can generate shallow acceptor states, leading to a good p-type conductivity in ZnO.

• Current Optics and Photonics
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• v.7 no.5
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• pp.569-573
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• 2023

We utilized terahertz time-domain spectroscopy (THz-TDS) to measure the thickness and electrical properties of nickel-chromium (Ni-Cr) films. This technique not only aligns well with traditional methods, such as haze-meter and transmission-densitometer measurements, but it also reveals the electrical properties and thickness of films down to a few tens of nanometers. The complex conductivity of the Ni-Cr thin films was extracted using the Tinkham formula. The experimental values closely aligned with the Drude model, indicating the reliability of our Ni-Cr film's electrical and optical constants. The thickness of Ni-Cr was estimated using the complex conductivity. These findings emphasize the potential of THz-TDS in quality control of metallic nanofilms, pointing toward an efficient and nondestructive test (NDT) for such analyses.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.7-9
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• 2003

Solid-state reactions in Ni/Si multilayered films (MLF) with an overall stoichiometry of $Ni_2Si$, NiSi and $NiSi_2$, induced by ion-beam mixing (IBM) and thermal annealing, were studied by using spectroscopic ellipsometry and magneto-optical spectroscopy as well as x-ray diffraction (XRD). The mixing was performed with Ar+ ions of an energy of 80 keV and a dose of $1.5 x\times10^{16}$ $Ar^+$/$\textrm{cm}^2$. It was shown that the IBM induces structural changes in the Ni/Si MLF, which cannot be detected by XRD but are confidently recognized by the optical method. A thermal annealing at 673 K of the Ni/Si MLF with an overall stoichiometry of NiSi and $NiSi_2$ causes formation of the first η -NiSi phase. The first trace for $NiSi_2$ phase on the background of NiSi one was detected by XRD after an annealing at 1073 K while, according to the optical results, $NiSi_2$ turns out be the dominant phase for the annealed Ni/Si MLF with an overall stoichiometry of $NiSi_2$.

• Journal of the Korean institute of surface engineering
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• v.39 no.1
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• pp.9-12
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• 2006

Al-doped ZnO(AZO)/Ag/AZO multi-layer films deposited on PET substrate by RF magnetron sputtering have a much better electrical properties than Al-doped ZnO single-layer films. The multi-layer structure consisted of three layers, AZO/Ag/AZO, the optimum thickness of Ag layers was determined to be $112{\AA}$ for high optical transmittance and good electrical conductivity. With about $1800{\AA}$ thick AZO films, the multi-layer showed a high optical transmittance in the visible range of the spectrum. The electrical and optical properties of AZO/Ag/AZO were changed mainly by thickness of Ag layers. A high quality transparent electrode, having a resistance as low as $6\;W/{\square}$ and a high optical transmittance of 87% at 550 nm, was obtained by controlling Ag deposition parameters.

• Journal of Magnetics
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• v.10 no.3
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• pp.128-132
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• 2005

We report optical ab-plane properties of the layered sodium cobaltate, $Na_xCoO_2$ for x = 0.35 and 0.75. Two samples show metallic behaviors according to dc resistivity transport. Overall temperature dependent optical conductivities of both samples are very similar to those of the high temperature superconducting underdoped cuprates. We found that the optical scattering rate of x = 0.75 sample, which is in a Curie-Weiss metallic phase, varies linearly (non-Fermi liquid) with frequency and temperature while that of x = 0.35 sample, which is in a paramagnetic metallic phase, varies quadratically (Fermi liquid) with frequency and temperature. Both x = 0.35 and 0.75 samples have an onset of scattering around $600\;cm^{-1}$ which can be attributed to the interaction of charge carriers with a bosonic collective mode in a system.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.65-65
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• 2011

Single-well carbon nanotubes (SWNT) have been proposed as a promising candidate for various applications owing to their excellent properties. In particular, their fascinating electrical and mechanical properties could provide a new area for the development of advanced engineering materials. A transparent conductive thin film (TCF) has increased for applications such as liquid crystal displays, touch panels, and flexible displays. Indium tin oxide (ITO) thin films, which have been traditionally used as the TCFs, have a serious obstacle in TCFs applications. SWNTs are the most appropriate materials for conductive films for displays due to their excellent high mechanical strength and electrical conductivity. But, a bundle of CNTs has different electrical properties than their individual counterparts. In this work, the fabrication by the spraying process of transparent SWNT films and reduction of its sheet resistance on PET substrates is researched. Arc-discharge SWNTs were dispersed in deionized water by adding sodum dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWNT was spray-coated on PET substrate and dried on a hotplate at $100^{\circ}C$. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then treated with ionic doping treatment, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. Results, we show that 97 ${\Omega}$/> sheet resistance can be achieved with 81% transmittance at the wavelength of 550 nm. The changes in electrical and optical conductivity of SWNT film before and after ionic doping treatments were discussed.

• Composites Research
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• v.30 no.6
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• pp.350-355
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• 2017

The new liquid crystalline (LC) epoxy was designed by substituting the phenylcyclohexyl (PCH) mesogen moiety with an alkyl chain at the 2,5 position of the diglycidyl terephthalate. The mesomorphic properties were evaluated by differential scanning calorimetry (DSC) and polarized optical microscopy (POM). All LC epoxy derivatives exhibited an enantiotropic smectic phase upon heating and cooling process. The LC phase temperature range was widened by mixing the eutectic mixture of LC epoxies. Interestingly, the cured LC epoxy exhibited the highest thermal conductivity of $0.4W{\cdot}m^{-1}{\cdot}K^{-1}$. The novel LC epoxy with high thermal conductivity might be used as a composite material for electronic and display devices.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.676-680
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• 2010

Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped $SnO_2$) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of $SrCu_2O_2$, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at $950^{\circ}C$ under $N_2$ atmosphere, and single-phase $SrCu_2O_2$ thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at $500^{\circ}C$, 1% $H_2$/(Ar + $H_2$) atmosphere. 3% $H_2$/(Ar + $H_2$) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated $SrCu_2O_2$ thin films. The electrical conductivity, mobility of carrier and carrier density $5.27{\times}10^{-2}S/cm$, $2.2cm^2$/Vs, $1.53{\times}10^{17}/cm^3$ a room temperature, respectively. Transmittance and optical band-gap of the $SrCu_2O_2$ thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained $SrCu_2O_2$ thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.

• Electrical & Electronic Materials
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• v.7 no.6
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• pp.481-489
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• 1994

The $SnO_2$/(n)Si solar cell was fabricated by electron beam evaporation method, and their properties were investigated. In proportion to increase of substrate and annealing temperature, the conductivity of $SnO_2$ thin film was increased, but its optical transmission decreases because of increasing optical absorption of free electrons in the thin film. $SnO_2$/Si Solar cell characteristics were improved by annealing, but the solar cells was deteriorated by heat treatment above 500[.deg. C]. The optimal outputs of $SnO_2$/Si solar cell through above investigations were $V_{\var}$:350[mV], $J_{sc}$ ;16.53[mA/c $m^{2}$], FF;0.41, .eta.=4.74[%]