• Korean Journal of Materials Research
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• v.29 no.12
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• pp.764-773
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• 2019

The gas response characteristic toward C₂H₅OH has been demonstrated in terms of copper-vacancy concentration, hole density, and microstructural factors for undoped/Li(I)-doped CuO thin films prepared by sol-gel method. For the films, both concentrations of intrinsic copper vacancies and electronic holes decrease with increasing calcination temperature from 400 to 500 to 600 ℃. Li(I) doping into CuO leads to the reduction of copper-vacancy concentration and the enhancement of hole density. The increase of calcination temperature or Li(I) doping concentration in the film increases both optical band gap energy and Cu2p binding energy, which are characterized by UV-vis-NIR and X-ray photoelectron spectroscopy, respectively. The overall hole density of the film is determined by the offset effect of intrinsic and extrinsic hole densities, which depend on the calcination temperature and the Li(I) doping amount, respectively. The apparent resistance of the film is determined by the concentration of the structural defects such as copper vacancies, Li(I) dopants, and grain boundaries, as well as by the hole density. As a result, it is found that the gas response value of the film sensor is directly proportional to the apparent sensor resistance.

• Journal of Powder Materials
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• v.15 no.5
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• pp.345-351
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• 2008

The effects of the dopant (Mn) ratio on the microstructure and thermoelectric properties of $FeSi_2$ alloy were studied in this research. The alloy was fabricated by a combination process of ball milling and high pressure pressing. Structural behavior of the sintered bulks were systematically investigated by XRD, SEM, and optical microscopy. With increasing dopan (Mn) ratio, the density and ${\varepsilon}-FeSi$ phase of the sintered bulks increased and maximum density of 94% was obtained in the 0.07% Mn-doped alloy. The sintered bulks showed fine microstructure of ${\alpha}-Fe_{2}Si_{5}$, ${\varepsilon}-FeSi$ and ${\beta}-FeSi_2$ phase. The semiconducting phase of ${\beta}-FeSi_2$ was transformed from ${\alpha}-Fe_{2}Si_{5}+{\varepsilon}-FeSi$ phase by annealing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.4
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• pp.315-320
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• 2013

The composites composed of conducting polymer (MEH-PPV), CdTe nanoparticles, and multiwalled carbon nanotubes (MWNTs) were spectroscopically and electrically characterized in their thin films. The composite films were prepared by spray coating. These composites were prepared from the mixture solution of MEH-PPV and CdTe-embedded MWNTs, in which CdTe nanoparticles were electrostatically bound to MWNTs. UV/vis and PL spectra were analyzed to investigate the optical absorbance and emission of the composite films. In addition, their structural, electrochemical, and electrical properties were studied by transmission electron microscopy, cyclic voltammetry, and I-V measurement.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.627-627
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• 2013

Recently, most studies concerning inorganic CdSe/ZnS quantum dot (QD)-polymer hybrid LEDs have been concentrated on the structure with multiple layers [1,2]. The QD LEDs used almost CdSe materials for color reproduction such as blue, green and red from the light source until current. However, since Cd is one of six substances banned by the Restriction on Hazardous Substances (RoHS) directive and classified into a hazardous substance for utilization and commercialization as well as for use in life, it was reported that the use of CdSe is not suitable to fabricate a photoelectronic device. In this work, we demonstrate a novel, simple and facile technique for the synthesis of ZnO-graphene quasi-core.shell quantum dots utilizing graphene nanodot in order to overcome Cd material including RoHS materials. Also, We investigate the optical and structural properties of the quantum dots using a number of techniques. In result, At the applied bias 10 V, the device produced bluish-white color of the maximum brightness 1118 cd/$m^2$ with CIE coordinates (0.31, 0.26) at the bias 10 V.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1645-1647
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• 1996

Polycrystalline CdTe thin films -have been studied for photovoltaic application because of their high absorption coefficient and optimal band gap energy (1.54 eV) for solar energy conversion. In this study, we prepared CdTe films using RF-magnetron sputtering method and investigated structural, optical and electrical properties with spectrophotometer, XRD, EDX, and resistivity meter. CdTe films at $200\;^{\circ}C$ showed a mixture of zinc blend (Cubic) and wurtzite (hexagonal) phase. On the other hand, the films at $400\;^{\circ}C$ showed highly oriented structure having hexagonal structure. The resistivity of CdTe films deposited on $SiO_2$ substrates was about $10_7\;{\Omega}cm$. The value of resistivity decreased with the increase of the substrate temperature. CdTe were sputtered on CdS thin films prepared by chemical bath deposition for the formation of the heterojunction. I-V characteristics of these cells were measured at a light density of $100mw/cm^2$, AM. 1.0. The present thin film solar cells showed a conversion efficiency of about 5%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.2
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• pp.99-103
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• 2015

One-dimensional photonic crystals (1D PCs) were fabricated by RF sputtering technique on p-Si (100), and fused quartz substrates. The 1D PCs structures consisted of $TeO_x$ (x=1.42), and $SiO_2$ with the difference refractive index. In order to estimate the effect on a defect level within 1D PCs structures, samples were prepared with both normal, and defect mode. The structural and optical properties were confirmed by Scanning electron microscope (SEM), and Ultraviolet visible near-infrared spectrophotometer (UV-VIS-NIR) respectively. In the case of a 1D PC normal mode without defect layer, it had a photonic band gap (PBG) in the near infrared (NIR) region. In the case of a 1D PC defect mode with defect layer, it had a sharp transmission band owing to a defect level, and moved towards the longer wavelength after exposing He-Cd laser with a wavelength of 325 nm.

• The Journal of the Acoustical Society of Korea
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• v.16 no.3
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• pp.73-80
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• 1997

This paper describes structural optimization of optical fiber-wound mandrel hydrophones with Finite Element Method (FEM). The hydrophone is supposed to have operation frequency range of up to 10 kHz and show omni-directional sensitivity pattern at 5 kHz. Studied parameters are mandrel geometry, molding thickness, and material properties of constitutional parts of the hydrophone. Theoretical calculation result shows that pressure sensitivity of the hydrophone increased as either mandrel length or molding thickness gets larger. Also higher pressure sensitivity requires a mandrel or molding material with relatively low Youngs modulus or Poissons ratio. Hydrophone bandwidth increases either as the mandrel length becomes shorter or as the mandrel becomes harder. The omni-directional characteristic is improved as the mandrel length becomes shorter, at 5 kHz. With the above results, we determine the structure of an optical fiber-wound mandrel hydrophone which has the pressure sensitivity of $30 {\times} 10_{-7}$ Rad./Pa, operation frequency range of up to 10 kHz, and shows omni-directional sensitivity pattern at 5 kHz.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.43 no.2
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• pp.149-155
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• 2015

MEMS-based louver and shutter type conventional variable emissivity radiators change their emissivity properties in accordance with a temperature condition to achieve efficient thermal control performance. However, there are some drawbacks such as a structural safety of the mechanical moving parts under sever launch environment and constant power consumption to maintain the intended emissivity. In this study, to overcome above drawbacks, we proposed a MEMS-based variable emissivity radiator, which can change the emissivity property according to the polarity change of electrodes by using electric charge of the bead. The effectiveness of the optimized radiator design has been demonstrated through the comparison of efficiency with the fixed emissivity radiator.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.123-123
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• 2015

Al doped ZnO(AZO) films as a transparent conductive oxide (TCO) electrode were deposited on glass, polyethylene naphthalate (PEN) and polyethylene terephthalate (PET) at room temperature by a conventional rf-magneton sputtering (CMS) and a facing target sputtering (FTS) using Al2O3 and ZnO targets. In order to investigation of AZO properties, the structural, surface morphology, electrical, and optical characteristics of AZO films were respectively analyzed. The resistivities of AZO films using FTS system were $6.50{\times}10-4{\Omega}{\cdot}cm$ on glass, $7.0{\times}10-4{\Omega}{\cdot}cm$ on PEN, and $7.4{\times}10-4{\Omega}{\cdot}cm$ on PET substrates, while the values of AZO films using CMS system were $7.6{\times}10-4{\Omega}{\cdot}cm$ on glass, $1.20{\times}10-3{\Omega}{\cdot}cm$ on PEN, and $1.58{\times}10-3{\Omega}{\cdot}cm$ on PET substrates. The AZO-films deposited by FTS system showed uniform surface compared to those of the films by CMS system. We thought that the films deposited by FTS system had low stress due to bombardment of high energetic particles during CMS process, resulted in enhanced electrical conductivity and crystalline quality by highly c-axis preferred orientation and closely packed nano-crystalline of AZO films using FTS system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.9
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• pp.701-706
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• 2013

We have focused on the conversion efficiency of CIGS thin film solar cell prepared by co-evaporation method as well as the optimization of process condition. The total thickness of back electrode was fixed at 1 ${\mu}m$ and the structural, electric and optical properties of CIGS thin film were investigated by varying the thickness of Mo:Na bottom layer from 0 to 500 nm. From the experimental results, the content of Na was appeared as 0.28 atomic percent when the thickness of Mo:Na layer was 300 nm with compactly densified plate-shape surface morphology. From the XRD measurements, (112) plane was the strongest preferential orientation together with secondary (220) and (204) planes affecting to the crystallization. The lowest roughness and resistivity were 2.67 nm and 3.9 ${\Omega}{\cdot}cm$, respectively. In addition, very high carrier density and hole mobility were recorded. From the optimization of Mo:Na layer, we have achieved the conversion efficiency of 9.59 percent.