• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.518-520
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• 1997

Recently, thiophene oligomer with short chain lengths has received much attention as model compounds for facilitating better understanding of electronic and optical properties of polymers, because oligomer is well-defined chemical systems and its conjugation chain length can be exactly controlled. Moreover, organic this films based on conjugated thiophene oligomer have potential for application to electronic and optoelectronic devices such as MISFETs(metal-insulator-semiconductor field-effect transistors) and LEDs(light-emitting diodes). However, there is little knowledge on electronic and structural properties of linear-conjugated oligothiophenes in solid states, compared with those in solutions. $\alpha$-sexithienyl($\alpha$-6T) thin-films were deposited by OMBD(Organic Molecular Beam Deposition) technique, where the $\alpha$-6T was synthesized and purified by the sublimation method. The $\alpha$-6T films were deposited under various conditions. The effects of deposition rate, substrate temperature, and vacuum pressure on the formation of these films have been studied. The molecules in the $\alpha$-6T film deposited at a low deposition rate under a high vacuum were aligned almost perpendicular to the substrate. The $\alpha$-6T films deposited at an elevated substrate temperature showed higher conductivity than the film deposited at room temperature. Electrical characterization of these films will be also executed by using four-point probe measurement technique.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.342.1-342.1
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• 2014

The electrical, optical and structural properties of Ti doped $In_2O_3$ (TIO) ohmic contacts to p-type GaN were investigated using linear facing target sputtering (LFTS) system. Sheet resistance and resistivity of TIO films are decreased with increasing rapid thermal annealing (RTA) temperature. Although the $400^{\circ}C$ and $500^{\circ}C$ annealed samples showed rectifying behavior, the $600^{\circ}C$ and $700^{\circ}C$ annealed samples showed linear I-V characteristics indicative of the formation of an ohmic contact between TIO and p-GaN. The annealing of the contact at $700^{\circ}C$ resulted in the lowest specific contact resistivity of $9.5{\times}10^{-4}{\Omega}cm^2$. Based on XPS depth profiling and synchrotron X-ray scattering analysis, we suggested a possible mechanism to explain the annealing dependence of the properties of TIO layer on rapid thermal annealing temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.318.1-318.1
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• 2014

Metal nano-crystals have been received much attentions owing to their excellent catalytic property and surface plasmon effect. In the last decade, many studies on synthesizing well-dispersive nanoparticles and on understanding their distinct physical properties have been performed. There were tremendous reports revealing the electrochemical activities and enhancement of surface plasmonic effect were dependent mainly on the size, shape, and composition. So far, most fabrication methods have been based on vacuum based deposition techniques, such as chemical vapor deposition and electron-beam evaporation, and then annealed them to transform into the nanoparticles. Recently, there were several reports regarding to the photoinduced nano-crystal synthesis as an effective way to produce the metal nanoparticles. In this study, we report synchrotron x-ray mediated synthesis of Au nanoparticles on ZnO nanowires. ZnO nanowires were fabricated by hydrothermal method, and then they were dip into a solution having Au clusters. Detailed structural evolution of Au nanoparticles was investigated using scanning electron microscopy and photoluminescence measurements. The results on formation of well-dispersive Au nanoparticles on ZnO nanowires will be presented.

• Bulletin of the Korean Chemical Society
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• v.25 no.3
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• pp.373-376
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• 2004

A novel Er(III) complex with oxydiacetate and 1,10-phenanthroline was synthesized and its structure and luminescence properties were characterized. The complex of $[Er(ODA){\cdot}(phen){\cdot}4H_2O]^+$ crystallizes in the monoclinic space group $P2_1$/n with a = 12.216(4) ${\AA}$, b = 16.680(2) ${\AA}$, c = 12.627(3) ${\AA}$, ${\beta}=108.30(2)^{\circ}$, V = 2442.7(11) ${\AA}^3$, Z = 4 and ${\rho}=1.841 g/cm^3$. When the complex is excited at the He-Cd 325-nm line, it produces two broad bands spanning the regions 350-650 nm and 1200-1650 nm. The emission band of the complex is characterized by a series of spectral dips in the visible emission profile. The complex exhibits sensitized near- IR emission via two kinds of energy transfers from phen to Er(III): nonradiative and radiative energy transfers.

• Journal of Surface Science and Engineering
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• v.43 no.4
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• pp.194-198
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• 2010

Indium doped zinc oxide films (ZIO) were deposited on non-alkali glass substrates by radio frequency (RF) magnetron sputtering at room temperature. The structural, electrical and optical properties of the ZIO films were investigated as a function of their $In_2O_3$ content (3.33-15.22 wt%). The ZIO films deposited with an $In_2O_3$ content of 9.54 wt% showed a relatively low resistivity of $9.13{\times}10^{-4}{\Omega}cm$ and a highly c-axis preferred orientation. The grain size and FWHM were mainly affected by the $In_2O_3$ content. The crystallinity and resistivity were enhanced with increasing grain size. The average transmittance of the ZIO films was over 85% in the visible region and their band gap varied from 3.22 to 3.66 eV depending on their doping ratio.

• Transactions on Electrical and Electronic Materials
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• v.11 no.1
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• pp.29-32
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• 2010

In this study, transparent and conductive Al-doped zinc oxide (AZO) films were prepared on a glass substrate by an radio frequency (RF) magnetron sputtering method using a 150-nm-thick AZO target (Al: 2 wt.%) at room temperature. We investigated the effects of RF power between 100-350 W (in steps of 50 W) on the structural, electrical, and optical properties of the AZO films. The thickness and cross-sectional images of the films were observed by field emission scanning electron microscopy. The thicknesses of all films were kept constant at 150 nm and grown on a glass substrate. The grain sizes of the AZO films were determined with the X-ray diffraction by using the Scherrer' equation, and their electrical properties were investigated using a Hall effect electronic transport measurement system. The transmittance of the AZO films was also measured by an ultraviolet-visible spectrometer.

• Applied Science and Convergence Technology
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• v.24 no.5
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• pp.178-183
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• 2015

Optical, electrical and structural properties of VOx/ZnO/VOx thin film are studied. The VOx/ZnO/VOx multilayer is deposited by using a radio frequency (RF) sputtering system. The VOx/ZnO/VOx thin film shows the high temperature coefficient of resistance (TCR) of $-3.12%/^{\circ}C$ and the low sheet resistance of about 80 $k{\Omega}/sq$ at room temperature. The responsivity and detectivity of the bolometer are measured as a function of modulation frequency.

• Korean Journal of Crystallography
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• v.17 no.1
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• pp.14-18
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• 2006

MOCVD 공정방법에 의해 수직정렬된 ZnO 나노선을 합성하고 공정조건 제어에 의해 합성되는 나노선의 물리적, 광학적 특성이 어떻게 변화하는지를 고찰하고자 하였다. 온도 및 산소분압제어 등의 공전변수 제어를 통하여 ZnO 나노 구조체는 나노선, 나노로드 뿐만 아니라 나노바늘 (nano-needle) 등 다양한 구조로 변화되었으며 그 직경 및 길이도 제어가 가능하였다. 전체적으로 양호한 특성의 wurzite 구조를 나타내었으며 기판에 수직인 방향으로 [0001] 방향으로 성장하였다. 광학특성에서는 나노선 직경이 작아질수록 주방출 피크의 천이현상이 관찰되었다.

• Proceedings of the Korean Society of Agricultural Engineers Conference
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• 2002.10a
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• pp.25-28
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• 2002

The aim of the present study was the evaluation of methods for estimating the vegetation information in the field on the basis of spectral reflectance measured farm field, in particular the estimation of Leaf Area Index(LAI). Variability in tissue optical properties was wavelength-dependent. For rice and bean, the lowest variation was in the visible spectral region and the highest in the near-infrared. The structural attributes of ecosystems determine the relative contribution of tissue and canopy factors that drive variation in a reflectance signal.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.252-252
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• 2010

AIZTO (Al-In-Sn-ZnO) thin film was deposited on glass substrate at room temperature by facing target sputtering (FTS) system. The FTS system was designed to array two targets facing each other. Two different kinds of targets were installed on FTS system. We used the ITO (In2O3 90wt%, SnO2 10wt%) target and the AZO (ZnO 98wt%, Al2O3 2wt%). AIZTO films were deposited in each of the applied power of the targets. The electrical and structural properties of the as-deposited AIZTO thin films were then examined by hall-effect measurement, and by using atomic force microscope (AFM), X-ray diffractometer (XRD), and energy dispersive x-ray spectroscopy (EDX). The optical property was measured by an UV-VIS spectrometer.