• Korean Journal of Materials Research
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• v.21 no.7
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• pp.371-376
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• 2011

We report on the effects of $TiO_2$ doping power on the characteristics of multicomponent $TiO_2$-ITO (TITO) electrodes prepared by a multi-target sputtering system with tilted cathode guns. Both as-deposited and annealed TITO electrodes showed linearly increased sheet resistance and resistivity with increasing $TiO_2$ doping power. However, the TITO electrodes exhibited a fairly high optical transmittance regardless of the $TiO_2$ doping power due to the high transparency of the $TiO_2$. Although the annealed TITO showed much lower sheet resistance and resistivity relative to the as-deposited samples, the electrical properties of the annealed samples exhibited similar dependence on the $TiO_2$ power to the as-deposited samples. In addition, it was found that doping of an anatase $TiO_2$ in the ITO electrode prevented the preferred (222) orientation of the TITO electrodes. Although the TITO electrode showed higher sheet resistance and resistivity than that of the pure ITO electrode, it offers a very smooth surface and usage of a low-cost Ti element. It is thus considered a promising multicomponent transparent conducting electrode for cost-efficient flat panel displays and photovoltatics.

• Korean Journal of Materials Research
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• v.33 no.11
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• pp.497-501
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• 2023

ZnO/Cu/ZnO (ZCZ) thin films were deposited at room temperature on a glass substrate using direct current (DC) and radio frequency (RF, 13.56 MHz) magnetron sputtering and then the effect of post-deposition electron irradiation on the structural, optical, electrical and transparent heater properties of the films were considered. ZCZ films that were electron beam irradiated at 500 eV showed an increase in the grain sizes of their ZnO(102) and (201) planes to 15.17 nm and 11.51 nm, respectively, from grain sizes of 13.50 nm and 10.60 nm observed in the as deposited films. In addition, the film's optical and electrical properties also depended on the electron irradiation energies. The highest opto-electrical performance was observed in films electron irradiated at 500 eV. In a heat radiation test, when a bias voltage of 18 V was applied to the film that had been electron irradiated at 500 eV, its steady state temperature was about 90.5 ℃. In a repetition test, it reached the steady state temperature within 60 s at all bias voltages.

• Journal of Surface Science and Engineering
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• v.47 no.4
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• pp.198-203
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• 2014

ZnO nanorods have been deposited on ITO glass by electrodeposition method. The optimization of two process parameters (precursor concentration and current) has been studied in order to control the orientation, morphology, and optical property of the ZnO nanorods. The structural and optical properties of ZnO nanorods were systematically investigated by using field-emission scanning electron microscopy, X-ray diffractometer, and photoluminescence. Commonly, the results show that ZnO nanorods with a hexagonal form and wurtzite crystal structure have a c-axis orientation and higher intensity for the ZnO (002) diffraction peaks. Both high precursor concentration and high electrodeposition current cause the increase in nanorods diameter and coverage ratio. ZnO nanorods show a strong UV (3.28 eV) and a weak visible (1.9 ~ 2.4 eV) bands.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.185-185
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• 2011

ZnTe semiconductor is very attractive materials for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. Another application to photovoltaics proved that ZnTe is useful for the production of high-efficiency multi-junction solar cells [2,3]. By using the pulse laser deposition system, ZnTe thin films were deposited on ZnO thin layer, which is grown on (0001) Al2O3substrates. To produce the plasma plume from an ablated ZnO and ZnTe target, a pulsed (10 Hz) YGA:Nd laser with energy density of 95 mJ/$cm^2$ and wavelength of 266 nm by a nonlinear fourth harmonic generator was used. The laser spot focused on the surface of the ZnO and ZnTe target by using an optical lens was approximately 1 mm2. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen gas flow was controlled around 3 sccm by using a mass flow controller system. During the ZnTe deposition, the substrate temperature was $400^{\circ}C$ and the ambient gas pressure was $10^{-2}$ Torr. The structural properties of the samples were analyzed by XRD measurement. The optical properties were investigated by using the photoluminescence spectra obtained with a 325 nm wavelength He-Cd laser. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system.

• Journal of the Korean Society for Heat Treatment
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• v.27 no.5
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• pp.230-234
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• 2014

IGZO/Ag bi-layered films were deposited on glass substrate at room temperature with radio frequency and direct current magnetron sputtering, respectively to consider the effect of Ag buffer layer on the electrical, optical and structural properties. For all deposition, while the thickness of Ag buffer layer was varied as 10, 15, and 20 nm, The thickness of IGZO films were kept at 100 nm, In a comparison of figure of merit, IGZO films with 15 nm thick Ag buffer layer show the higher figure of merit ($1.1{\times}10^{-2}{\Omega}^{-1}$) than that of the IGZO single layer films ($3.7{\times}10^{-4}{\Omega}^{-1}$). From the observed results, it is supposed that the IGZO 100 nm/Ag 15 nm bi-layered films may be an alternative candidate for transparent electrode in a transparent thin film transistor device.

• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.2
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• pp.233-240
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• 2021

For the production of neodymium-doped zinc sulfide thin films in various amounts, zinc sulfide and neodymium were simultaneously deposited using an RF magnetron sputtering equipment to form a thin films, and rapid thermal annealing was performed at 400℃ for 30 minutes as a post-treatment process. The structure, shape, and optical properties of ZnS thin films having various neodymium doping contents (0.35at.%, 1.31at.%, 1.82at.% and 1.90at.%) were studied. The X-ray diffraction pattern was grown to a (111) cubic structure in all thin films. The surface and structural morphology of the thin films due to the neodymium doping content was explained through SEM and AFM images. Only elements of Zn, S, and Nd that do not contain other impurities were identified through EDAX. The transmittance and band gap of the prepared thin films were confirmed using the UV-vis spectrum.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.105-106
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• 2008

Structural, optical and electrical properties of CdS films deposited by chemical bath deposition (CBD), which are a very attractive method for low-cost and large-area solar cells, are presented. Cadmium sulfide (CdS) is II-VI semiconductor with a wide band gap of approximately 2.42 eV. CdS films have a great application potential such as solar cell, optical detector and optoelectronics device. In this paper, effects of Rapid Thermal Process (RTP) on the properties of CdS films were investigated. The CdS films were prepared on a glass by chemical bath deposition (CBD) and subsequently annealed at standard temperature $(400^{\circ}C)$ and treatment time (10 min) in various atmospheres (air, vacuum and $N_2$). The CdS films treated RTP in $N_2$ for to min were showed larger grain size and higher carrier density than the other samples.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.11
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• pp.702-706
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• 2016

We demonstrated that self-separation FS-GaN (freestanding-GaN) was grown on MELO (maskless epitaxially lateral overgrowth) GaN template by horizontal HVPE (hydride vapor phase epitaxy). Before thick GaN grwoth, MELO GaN template was grown on patterned GaN template by MOCVD (metal organic chemical vapor deposition). The laterally overgrown GaN would consist of a continuous well coalesced layer. The mixed TDD (threading dislocation density) of seed and wing region were $8{\times}10^8cm^{-2}$ and $7{\times}10^7cm^{-2}$, respectively. After thick GaN grown by HVPE, the self-separation between thick GaN and sapphire substrate was generated at seed region. The regions of self-separation for FS-GaN and sapphire were observed by FE-SEM. Moreover, Raman results indicated that the compressive strain of seed and wing regions at FS-GaN substrate were slightly released compared to that of thick GaN grown on conventional GaN template. The optical properties of the FS-GaN substrate were examined by using PL (photoluminescence). The PL exhibited that donor bound exciton and donor acceptor pair were observed at low temperature. The effects on optical and structural properties of FS-GaN substrate have been discussed in detail.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.1
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• pp.12-16
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• 2020

Indium tin oxide (ITO) films were prepared onto transparent polyimide (PI) substrates by RF magnetron sputtering at room temperature. The deposited ITO films were heat-treated at various temperatures (50, 100, 150, and 200℃). The effect of post heat-treatment temperature on structural, electrical and optical properties of ITO films were investigated. It was found that the as-deposited ITO films were amorphous and the degree of crystallinity and the grain size increased with an increasing heat-treatment temperature, which led to the increase in carrier concentration and mobility. The electrical resistivity of as-deposited ITO films was 2.73 × 10^-3 Ω·cm. With the heat-treatment temperature increasing from 50 to 200℃, the electrical resistivity decreased from 2.93 × 10^-3 to 1.21 × 10^-4 Ω·cm. The average transmittance (400~800 nm) of the ITO deposited PI substrates was decreasing with post heat-treatment temperature and was above 81 % for the temperatures 50~150℃ and decreased considerably to 78 % at 200℃.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.114-114
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• 2010

In this study, structural properties and photoluminescent characteristics of thin film rhombohedral zinc orthosilicate doped with manganese ($Zn_2SiO_4:Mn$) were investigated. The $Zn_2SiO_4:Mn$ films showed a pronounced absorption edge in the near ultraviolet wavelength region and a high optical transparency in the visible spectral range. The maximum transmittance reached 0.922 at 597 nm, which was very close to the transmittance of the fused quartz substrate alone (0.935). The $Zn_2SiO_4:Mn$ films were composed of rhombohedral polycrystalline grains with random crystallographic orientation. The broad-band photoluminescence emission peaked at around 525 nm was observed from the $Zn_2SiO_4:Mn$ films, which was ascribed to the radiative relaxation from the $^4T_1$ lowest excitation state to $^6A_1$ ground state of 3d5 electrons in divalent manganese ion. The excitation band exhibited a peak maximum at 259 nm in the near ultraviolet region, which was considered to be associated with the charge transfer transition of divalent Mn ion in the $Zn_2SiO_4$ system.