• Bulletin of the Korean Chemical Society
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• v.25 no.8
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• pp.1241-1243
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• 2004

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.2
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• pp.97-103
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• 2014

Phase transition properties of the copolymer films of polyvinylidene fluoride (PVDF) and trifluoroethylene(TrFE), P(VDF-TrFE), were studied with X-ray diffraction (XRD) and polarization modulated ellipsometry (PME). XRD studies on both Langmuir-Blodgett (LB) films and spin coated films exhibit conversions from ferroelectric phase to paraelectric phase at $108{\pm}2^{\circ}C$ on heating and paraelectric phase to ferroelectric phase at $78{\pm}2^{\circ}C$ on cooling. The presence of the ferroelectric-paraelectric phase transition is also confirmed by the PME technique for the first time in this study. PME was proved to be a very sensitive tool in the measurement of the structural changes at the nano-thickness films.

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.178-179
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• 2000

TiO$_2$는 비교적 큰 에너지 밴드 갭을 지닌 반도체 물질로서 가시광 영역에서 높은 굴절률과 화학적으로 매우 안정한 특성을 가지고 있으며, 유전체 다층 박막을 제작하는데 있어서 중요한 물질로써 사용되어져 왔다.$^{[1]}$ 또한 최근에는 TiO$_2$의 전기적, 광학적 특성과 광촉매 특성에 대하여 광범위하게 연구되어 지고 있다.$^{[2]}$ TiO$_2$는 일반적으로 rutile, anatase, brookite의 세 가지 결정형태가 있으며, 이들의 구조적 특성에 대한 연구가 활발히 진행되고 있다. TiO$_2$는 여러 가지 방법으로 박막을 조성할 수 있다.$^{[1]}$ (중략)

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.471-478
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• 2002

Vacuum evaporated cadmium sulphide (CdS) thin films were implanted with $Ar^+$ and $N^+$ for different doses. The properties of the ion implanted CdS thin films have been analysed using XRD, optical transmittance spectra, and Raman scattering studies. Formation of Cd metallic clusters were observed in ion implanted films. The band gap of $Ar^+$ doped films decreased from 2.385 eV of the undoped film to 2.28 eV for the maximum doping. In the case of $N^+$ doped film the band gap decreased from 2.385 to 2.301 eV, whereas the absorption coefficient values increased with the increase of implantation dose. On implantation of both types of ions, the Raman peak position appeared at $299\textrm{cm}^{-1}$ and the FWHM changed with the ion dose.

• Journal of Surface Science and Engineering
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• v.38 no.3
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• pp.112-117
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• 2005

In this paper, CdS thin films, which were widely used as a window layer of the CdS/CdTe and the $CdS/CuInSe_2$heterojunction solar cell, were grown by chemical bath deposition, and the structural, optical and electrical properties of the films on reaction temperatures were investigated. Cadmium acetate and thiourea were used as cadmium and sulfur source, respectively. And Ammonium acetate was used as the buffer solution. As the reaction temperatures were increased, the deposition rate of CdS fllms prepared by CBD was increased and the grain size was large due to increasing reaction rate in solution, also optical transmittance of the films in visible lights was increased on rising reaction temperatures.

• Proceedings of the KIEE Conference
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• 2006.07a
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• pp.609-610
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• 2006

As developing the information society, Lighting Emitted diode(LED) which is light source for illumination of next generation is attracted public attention. LED have many problem as narrow light view angle, high price, drift phenomenon of color coordinate, high heating problem for lower power, lower weight and small size. So, many researches have continued in a illumination as LED module type. in this problem, heating problem is very important and difficult and that is caused in decreasing phenomenon of brightness and drift phenomenon of color coordinate. so the problem of heating is urgent question for illumination of LED. In this paper, structural design of PCB changed as two type for solving the heating problem. also the properties of heating is analysed and optical properties is measured with heating image camera and spectrometer according to change in this design.

• Proceedings of the KIEE Conference
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• 2006.07d
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• pp.2241-2242
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• 2006

As developing the information society, Lighting Emitted diode(LED) which is light source for illumination of next generation is attracted public attention. LED have many problem as narrow light view angle, high price, drift phenomenon of color coordinate, high heating problem for lower power, lower weight and small size. So, many researches have continued in a illumination as LED module type. in this problem, heating problem is very important and difficult and that is caused in decreasing phenomenon of brightness and drift phenomenon of color coordinate. so the problem of heating is urgent question for illumination of LED. In this paper, structural design of PCB changed as two type for solving the heating problem. also the properties of heating is analysed and optical properties is measured with heating image camera and spectrometer according to change in this design.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.277-283
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• 2009

In this paper, aluminum doped zinc oxide (ZnO:Al) thin films on plastic substrate such as poly carbonate (PC), polyethylene terephthalate (PET) were prepared by RF magnetron sputtering method for flexible solar cell applications. Effects of the sputter pressure on the structural, electrical and optical properties were investigated. The crystallinity and the degree of the (002) orientation were deteriorated with increasing the sputter pressure. When the sputter pressure was higher, the conductivity of ZnO:Al films was improved because of the high carrier concentration and the Hall mobility. High quality ZnO:Al films with resistivity as low as $1.9{\times}10^{-3}{\Omega}-cm$ and the optical transmittance over 80 % in the visible region have been obtained on PC substrate at 2 mTorr.

• Applied Science and Convergence Technology
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• v.23 no.6
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• pp.366-370
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• 2014

ZnO:Al transparent conductive films were deposited on glass substrates by RF magnetron sputtering technique and annealed by rapid thermal annealing system. The influence of annealing time on the structural, electrical, and optical properties of ZnO:Al thin films was investigated by atomic force microscopy, X-ray diffraction, Hall method and optical transmission spectroscopy. As the annealing time increases from 0 to 5 min, the crystallinity is improved, the root main square surface roughness is decreased and the sheet resistance is decreased. The lowest sheet resistance of ZnO:Al thin film is 90 ohm/sq. The reduction of sheet resistance is caused by increasing carrier concentration due to substituent Al ion. All films are transparent up to 80% in the visible wavelength range and the adsorption edge is a blue-shift due to Burstein-Moss effect with increasing annealing time.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.57-57
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• 2018

Zinc-oxide (ZnO), II-VI semiconductor with a wide and direct band gap (Eg: 3.2~3.4 eV), is one of the most potential candidates to substitute for ITO due to its excellent chemical, thermal stability, specific electrical and optoelectronic property. However, the electrical resistivity of un-doped ZnO is not low enough for the practical applications. Therefore, a number of doped ZnO films have been extensively studied for improving the electrical conductivities. In this study, Ti-doped ZnO films were successfully prepared by atomic layer deposition (ALD) techniques. ALD technique was adopted to careful control of Ti doping concentration in ZnO films and to show its feasible application for 3D nanostructured TCO layers. Here, the structural, optical and electrical properties of the Ti-doped ZnO depending on the Ti doping concentration were systematically presented. Also, we presented 3D nanostructured Ti-doped ZnO layer by combining ALD and nanotemplate processes.