• Title/Summary/Keyword: Optical and structural properties

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Structural and optical properties of Ga-doped ZnO nanowires synthesized by pulsed laser deposition in furnace (갈륨 도핑된 ZnO 나노와이어의 합성과 구조적 광학적 특성 분석)

  • Kim, Chang-Eun;Ahn, Byung-Du;Jean, Kyung-Ah;Son, Hyo-Jeong;Kim, Gun-Hee;Lee, Sang-Yeol
    • Proceedings of the KIEE Conference
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    • 2006.10a
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    • pp.46-47
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    • 2006
  • Ga-doped ZnO nanowires have been synthesized by pulsed laser deposition (PLD) in furnace on gold coated (0001) sapphire substrates. The effect of repetition rate on structural and optical properties of Ga-doped ZnO nanowires are investigated. By controlling repetition rate, the diameter of nanowires is varied between about 60 and 100 nm, and the length of nanowires is varied between about 2 and 4 um. The X-ray diffraction (XRD) reveals the structural defects induced by the Ga doping. The room temperature photoluminescence (PL) spectra of Ga-doped ZnO nanowires show strong UV emission between 382.394 and 385.279 nm with negligible visible emission.

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Structural and Optical Properties of ZnO/Glass Thin Films Grown by Radio-Frequency Magnetron Sputtering with a Powder Target (ZnO 분말 타겟을 스퍼터링하여 Glass 기판위에 증착한 ZnO 박막의 구조적, 광학적 특성)

  • Sun, J.H.;Kang, H.C.
    • Journal of the Korean Vacuum Society
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    • v.18 no.5
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    • pp.394-401
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    • 2009
  • This paper reports the structural and optical properties of ZnO/glass thin films grown by radio-frequency magnetron sputtering with a powder target. In contrast to ZnO ceramic target typically used, a ZnO raw powder target was sputtered in this study. ZnO grew with the (0002) preferred orientation along the surface normal direction. Initially, the surface of ZnO thin films was flat considerably and then it became rougher as the thickness increased. The optical transmittance was as high as 88% in the range of 400-1000 nm. The bandgap energy of 3.23 eV at the 220 nm thick sample was estimated.

Effect on the structural integrity and fatigue damage monitoring of smart composite structures with embedded intensity based optical fiber sensors (삽입된 광강도형 광섬유센서가 지능형 복합재 구조물의 건전성에 미치는 영향 및 피로손상 감시)

  • Lee, Dong-Chun;Lee, Jung-Ju;Seo, Dae-Cheol;Huh, Jeung-Soo
    • Journal of Sensor Science and Technology
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    • v.10 no.1
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    • pp.42-51
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    • 2001
  • In this study, the effects of embedded optical fibers on the static properties under tensile load and dynamic properties under fatigue load of composite laminates were investigated by experimental tests and finite element analysis. Based on the results, it can be concluded that the embedded optical fiber sensors do not have significant effects on the structural integrity of the smart composite structures except when the sensors are embedded perpendicular to the adjacent reinforcing fibers under fatigue loading. An intensity-based optical fiber sensor was embedded in the crossply composite laminates to monitor the fatigue damage by detecting the stiffness changes of the laminates. The result of this experiment has shown that the intensity-based optical fiber sensor has large potential to monitor the fatigue damage of composite structures by detecting the stiffness changes of the structures with simple and inexpensive instruments and without complex post-processing of measured signals. In addition, the optical fiber sensor showed good resistance to fatigue loading and wide sensing ranges of stiffness.

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Electrical and Optical Properties of Asymmetric Dielectric/Metal/Dielectric (D/M/D) Multilayer Electrode Prepared by Radio-Frequency Sputtering for Solar Cells

  • Pandey, Rina;Lim, Ju Won;Lim, Keun Yong;Hwang, Do Kyung;Choi, Won Kook
    • Journal of Sensor Science and Technology
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    • v.24 no.1
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    • pp.15-21
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    • 2015
  • Transparent and conductive multilayer thin films consisting of three alternating layers FZTO/Ag/$WO_3$ have been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting oxides and the structural and optical properties of the resulting films were carefully studied. The single layer fluorine doped zinc tin oxide (FZTO) and tungsten oxide ($WO_3$) films grown at room temperature are found to have an amorphous structure. Multilayer structured electrode with a few nm Ag layer embedded in FZTO/Ag/$WO_3$ (FAW) was fabricated and showed the optical transmittance of 87.60 % in the visible range (${\lambda}=380{\sim}770nm$), quite low electrical resistivity of ${\sim}10^{-5}{\Omega}cm$ and the corresponding figure of merit ($T^{10}/R_s$) is equivalent to $3.0{\times}10^{-2}{\Omega}^{-1}$. The resultant power conversion efficiency of 2.50% of the multilayer based OPV is lower than that of the reference commercial ITO. Asymmetric D/M/D multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.

The Structural and Optical Properties of GaAs- SiO2 Composite Thin Films With Varying GaAs Nano-particle Size (GaAs 나노입자 크기에 따른 SiO2 혼합박막의 구조적 광학적 특성)

  • Lee, Seong-Hun;Kim, Won-Mok;Sin, Dong-Uk;Jo, Seong-Hun;Jeong, Byeong-Gi;Lee, Taek-Seong;Lee, Gyeong-Seok
    • Korean Journal of Materials Research
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    • v.12 no.4
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    • pp.296-303
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    • 2002
  • For potential application to quantum mechanical devices, nano-composite thin films, consisting of GaAs quantum dots dispersed in SiO$_2$ glass matrix, were fabricated and studied in terms of structural, chemical, and optical properties. In order to form crystalline GaAs quantum dots at room temperature, uniformly dispersed in $SiO_2$matrix, the composite films were made to consist of alternating layers of GaAs and $SiO_2$in the manner of a superlattice using RF magnetron sputter deposition. Among different film samples, nominal thickness of an individual GaAs layer was varied with a total GaAs volume fraction fixed. From images of High Resolution Transmission Electron Microscopy (HRTEM), the formation of GaAs quantum dots on SiO$_2$was shown to depend on GaAs nominal thickness. GaAs deposits were crystalline and GaAs compound-like chemically according to HRTEM and XPS analysis, respectively. From measurement of optical absorbance using a spectrophotometer, absorption edges were determined and compared among composite films of varying GaAs nominal thicknesses. A progressively larger shift of absorption edge was noticed toward a blue wavelength with decreasing GaAs nominal thickness, i.e. quantum dots size. Band gaps of the composite films were also determined from Tauc plots as well as from PL measurements, displaying a linear decrease with increasing GaAs nominal thickness.

A Study on Photocatalytic Degradation Properties by Oxygen Partial Pressure for Tio2Thin Films Fabricated by DC Magnetron Sputtering (DC 마그네트론 스퍼터링법으로 제조된 Tio2 박막의 산소분압비에 따른 광분해 특성에 관한 연구)

  • Jeong, W.J.;Park, J.Y.;Park, G.C.
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.3
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    • pp.226-230
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    • 2005
  • This paper describes the photocatalytic degradation properties by oxygen partial pressure for TiO$_2$ thin films fabricated by dc magnetron reactive sputtering. And the structural, chemical, optical and photocatalytic properties were investigated at various analysis system. When TiO$_2$ thin film was made at deposition time of 120 min and Ar:O$_2$ ratio of 60:40, the best properties were obtained. That results were as follows: thickness; 360∼370 nm, gram size; 40 nm, optical energy band gap; 3.4 eV and Benzene conversion in the photocatalytic degradation; 11 %.

Structural, physical, optical, and gamma ray shielding properties of SnO2-based boro-silicate glasses: The influence of substituting Na2O by SnO2

  • Mohammad W. Marashdeh;K.A. Mahmoud;Hanan Akhdar;Mohamed Tharwat
    • Nuclear Engineering and Technology
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    • v.56 no.9
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    • pp.3804-3811
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    • 2024
  • The study focuses on creating new boro-silicate glasses doped with SnO2 for radiation shielding. It examines how substituting Na2O with SnO2 affects their structural, optical, and shielding properties. Density increases from 2.406 to 2.488 g/cm3 with rising SnO2, measured via the Archimedes Method. The examination for the glassy phase was performed using the XRD diffractometer. UV/Vis spectrophotometer analysis reveals reduced refractive index (2.412-1.976) and increased optical absorption-band gap (direct: 3.648-5.662 eV; indirect: 2.994-5.163 eV) with SnO2 concentrations of 0-9 mol.%). The effectiveness of the radiation shielding was assessed over the 0.059-1.408 MeV gamma-ray energy interval. The analysis demonstrates that when the concentration of SnO2 increases, the synthesized glasses' linear attenuation coefficient improves. As the SnO2 content was raised between 0 and 9 mol%, the linear attenuation coefficient rose between 0.489 and 2.892 cm-1 (at energy of 0.059 MeV) and between 0.126 and 0.128 cm-1 (at energy of 1.408 MeV), respectively. As the SnO2 content was raised between 0 and 9 mol%.

ZnO Nanorods Grown on CdxZn1-xO Seed Layers with Various Cd Mole Fractions

  • Kim, Min-Su;Kim, Do-Yeob;Yim, Kwang-Gug;Kim, Soaram;Nam, Gi-Woong;Kim, Sung-O;Lee, Dong-Yul;Leem, Jae-Young
    • Bulletin of the Korean Chemical Society
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    • v.33 no.1
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    • pp.189-193
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    • 2012
  • ZnO nanorods were grown on the $Cd_xZn_{1-x}O$ seed layers with various Cd mole fractions by hydrothermal method. The effects of the Cd mole fraction for $Cd_xZn_{1-x}O$ seed layers on the structural and optical properties of the ZnO nanorods were investigated by scanning electron microscopy, X-ray diffraction, and photoluminescence. The narrowest full-width at half-maximum and largest grain size of the $Cd_xZn_{1-x}O$ seed layers, indicating improvement in crystal quality, were observed at the Cd mole fraction of 0.5. At the Cd mole fraction of 0.5, the largest enhancement in the density, the crystal quality, and the growth rate of the ZnO nanorods was observed while their appearance was not affected significantly by the incorporation of the Cd in the $Cd_xZn_{1-x}O$ seed layers. Consequently, the luminescent properties of the ZnO nanorods were enhanced. The largest improvement in the structural and optical properties of the ZnO nanorods was observed at the Cd mole fraction of 0.5.

Structural, Optical, and Magnetic Properties of Si1-xMnxTe1.5 Single Crystals (Si1-xMnxTe1.5 단결정의 구조적, 광학적, 자기적 특성에 관한 연구)

  • Hwang, Young-Hun;Um, Young-Ho;Cho, Sung-Lae
    • Journal of the Korean Magnetics Society
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    • v.16 no.3
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    • pp.178-181
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    • 2006
  • We have investigated the Mn concentration-dependent structural, optical, magnetic properties in IV-VI diluted magnetic semiconductor $Si_{1-x}Mn_xTe_{1.5} $ crystals prepared by the vertical Bridgman technique. X-ray studies showed the single crystalline hexagonal crystal structure. From the optical absorption measurements energy band gap were found to decreases with increasing x and temperature. From the magnetization measurements the samples had ferromagnetic ordering with Curie temperature $T_C$ about 80 K. With increasing Mn concentration, the average magnetic moments per Mn atom determined from the saturated magnetization increased.

The Structural and Optical Properties with Composition Variation of CdxZn1-xO Thin Films Prepared by Sol-Gel Method (Sol-Gel 방법으로 제작된 CdxZn1-xO 박막의 조성비에 따른 구조적 및 광학적 특성)

  • Cheon, Min Jong;Kim, Soaram;Nam, Giwoong;Yim, Kwang Gug;Kim, Min Su;Leem, Jae-Young
    • Korean Journal of Metals and Materials
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    • v.49 no.7
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    • pp.583-588
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    • 2011
  • $Cd_xZn_{1-x}O$ thin films were grown on quartz substrates by using the sol-gel spin-coating method. The mole fraction, x, of the $Cd_xZn_{1-x}O$ thin films was controlled from 0 to 1 by changes in the content ratio of the cadmium acetate dehydrate [$Cd{(CH_3COO)}_2{\cdot}2H_2O$] and zinc acetate dehydrate [$Zn{(CH_3COO)}_2{\cdot}2H_2O$]. The effects of the mole fraction on the morphological, structural, and optical properties of the $Cd_xZn_{1-x}O$ thin films were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and UV-visible spectroscopy. The $Cd_xZn_{1-x}O$ thin films exhibited the polygonal surface morphology and their grain size was increased ranging from 42.1 to 63.9 nm with the increase in the mole fraction. It was observed that the absorption bandgap of the $Cd_xZn_{1-x}O$ thin films decreased from 3.25 to 2.16 eV as the mole fraction increased and the Urbach energy ($E_U$) values changed inversely to the optical bandgap of the $Cd_xZn_{1-x}O$ thin films.