• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.171-172
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• 2008

• Proceedings of the Optical Society of Korea Conference
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• 2008.07a
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• pp.209-210
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.522-522
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• 2013

Plasma can be used to various applications such as sterilization, inactivation/removal of microorganisms, wound healing, tooth bleaching, cancer treatment, surface modification and plasma polymerization. In this research, we studied the effect of plasma irradiation on the structural, optical, and biological properties of the polymer films. Several polymers were synthesized and then deposited on the glass substrates. The polymer films were treated by oxygen and nitrogen plasmas. Plasma-treated films were investigated by contact angle, infrared absorption spectroscopy, cathodoluminescence spectroscopy, and scanning electron microscopy. Functional materials were prepared on plasma-treated surface, and their performances were investigated using various techniques. Next, we discuss relationship between the performance of functional materials and the structural properties of plasma-treated polymer films.

• Korean Journal of Metals and Materials
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• v.47 no.1
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• pp.38-43
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• 2009

To investigate the effect of RF power on the structural, optical and electrical properties of amorphous InGaZnO (a-IGZO), its thin films and TFTs were prepared by RF magnetron sputtering method with different RF power conditions of 40, 80 and 120 W at room temperature. In this study, as RF power during the deposition process increases, the RMS roughness of a-IGZO films increased from 0.26 nm to 1.09 nm, while the optical band-gap decreased from 3.28 eV to 3.04 eV. In the case of the electrical characteristics of a-IGZO TFTs, the saturation mobility increased from $7.3cm^2/Vs$ to $17.0cm^2/Vs$, but the threshold voltage decreased from 5.9 V to 3.9 V with increasing RF power. It is regarded that the increment of RF power increases the carrier concentration of the a-IGZO semiconductor layer due to the higher generation of oxygen vacancies.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.133-138
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• 2017

We evaluated the structural, electrical and optical properties of tungsten (W)-doped $Ge_8Sb_2Te_{11}$ thin films. In a previous work, GeSbTe alloys were doped with different materials in an attempt to improve thermal stability. 200 mm thick $Ge_8Sb_2Te_{11}$ and W-doped $Ge_8Sb_2Te_{11}$ films were deposited on p-type Si (100) and glass substrates using a magnetron co-sputtering system at room temperature. The fabricated films were annealed in a furnace in the $0{\sim}400^{\circ}C$ temperature range. The structural properties were analyzed using X-ray diffraction (X'pert PRO, Phillips). The results showed increased crystallization temperature ($T_c$) leading to thermal stability in the amorphous state. The optical properties were analyzed using an UV-Vis-IR spectrophotometer (Shimadzu, U-3501, range : 300~3,000 nm). The results showed an increase in the crystalline material optical energy band gap ($E_{op}$) and an increase in the $E_{op}$ difference (${\Delta}E_{op}$). This is a good effect to reduce memory device noise. The electrical properties were analyzed using a 4-point probe (CNT-series). This showed increased sheet resistance ($R_s$), which reduces programming current in the memory device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.9
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• pp.776-779
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• 2007

In this study we present the effect of annealing temperatures on the structural, electrical and optical characteristics of Ga-doped ZnO (GZO) films. GZO target is deposited on coming 7059 glass substrates by DC sputtering. and then GZO films are annealed at temperatures of 400, 500, $600^{\circ}C$ in air ambient for 20 min. in this case of as-grown film, it shows the resistivity of $6{\times}10^{-1}{\Omega}{\cdot}cm$ and transmittance under 85%, whereas the electrical and optical properties of film annealed at $500^{\circ}C$ are enhanced up to $1.9{\times}10^{-3}{\Omega}{\cdot}cm$ and 90%, respectively.

• Bulletin of the Korean Chemical Society
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• v.34 no.12
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• pp.3547-3552
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• 2013

Single crystal EPR and optical studies of a mixed ligand zinc(II) complex doped with VO(II) ion is carried out to establish the structural properties. The angular variation of vanadyl hyperfine lines indicates a single site, with spin Hamiltonian parameters as: $g_{xx}=1.985$, $g_{yy}=1.979$, $g_{zz}=1.943$; $A_{xx}=8.71$, $A_{yy}=6.41$ and $A_{zz}=17.80$ mT. By comparing the direction cosines of principal g and A values with the direction cosines of metalligand bonds, it has been confirmed that the vanadyl ion has entered the lattice interstitially. The exact interstitial position of VO(II) in host lattice has been calculated using the fractional coordinates of atoms in the host lattice out of many assumptions. The EPR and optical data have been confirmed to obtain various bonding parameters, from which the nature of the bonding in the complex is discussed. FT-IR confirms the formation of structure of host lattice.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.222-227
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• 2010

ZnO nanorods array have been grown on the seed crystal coated Si(100) substrate by hydrothermal method. The growth, structural and optical properties of ZnO nanorods array were investigated with a variation of precursor concentration from 0.01 M to 0.04 M. The array density of grown ZnO nanorods per same area was increased with increasing the concentration of precursor solution. Vertically aligned ZnO nanorods with hexagonal wurtzite structure have highly preferred c-axis orientation along (002) lattice plane. Especially, ZnO nanorods array developed from 0.04 M precursor solution showed a diameter of about 85 nm and length of 1.2 {\mu}m$ without any crystallographic defects. The photoluminescence spectra of ZnO nanorods from heavier precursor concentration exhibited stronger UV emission around 380 nm corresponding with near-band-edge emission.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.164-168
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• 2011

Nanocrystalline cadmium sulphide (CdS) thin films were prepared using chemical bath deposition (CBD), and the structural, optical and photoconductive properties were investigated. The crystal structure of CdS thin film was studied by X-ray diffraction. The crystallite size, dislocation density and lattice constant of CBD CdS thin films were investigated. The dislocation density of CdS thin films initially decreases with increasing film thickness, and it is nearly constant over the thickness of 2,500 ${\AA}$. The dislocation density decreases with increasing the crystallite size. The Urbach energies of CdS thin films are obtained by fitting the optical absorption coefficient. The optical band gap of CdS thin films increases and finally saturates with increasing the lattice constant. The Urbach energy and optical band gap of the 2,900 A-thick CdS thin film prepared for 60 minutes are 0.24 eV and 2.83 eV, respectively. The activation energies of the 2,900 ${\AA}$-thick CdS thin film at low and high temperature regions were 14 meV and 31 meV, respectively. It is considered that these activation energies correspond to donor levels associated with shallow traps or surface states of CdS thin film. Also, the value of ${\gamma}$ was obtained from the light transfer characteristic of CdS thin film. The value of ${\gamma}$ for the 2,900 A-thick CdS thin film was 1 at 10 V, and it saturates with increasing the applied voltage.

• Korean Journal of Materials Research
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• v.34 no.10
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• pp.491-496
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• 2024

Perovskite-based solar cells have recently exhibited rapid improvement in power conversion efficiency due to their high optical and electrical properties. However, perovskite materials are fundamentally degraded by heat and moisture, making long-term stability a critical issue. One way to improve the stability of perovskite solar cells is to encapsulate them. However, a low temperature encapsulation process of less than 100 ℃ is needed to minimize degrading the perovskite materials. High moisture barrier properties are also required. To realize a high performance encapsulation layer at low temperature we employed atomic layer deposition (ALD) technique. As the encapsulation layer materials, Al₂O₃, which is most commonly used due to its high density and optical properties, and SnO₂, which is mainly used as an electron transport layer in perovskite solar cells, were selected. Single film and multi-layer structured films of Al₂O₃ and SnO₂ were deposited, and the structural, optical, and moisture permeability properties were investigated.