Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effect of Annealing on the Structural, Electrical and Optical Characteristics of Ga-doped ZnO(GZO)films

Ga doped ZnO 박막의 열처리 조건에 따른 구조 및 전기적 특성에 관한 연구

  • 오수영 (성균관대학교 정보통신공학부) ;
  • 김응권 (성균관대학교 정보통신공학부) ;
  • 이태용 (성균관대학교 정보통신공학부) ;
  • 강현일 (성균관대학교 정보통신공학부) ;
  • 김봉석 (성균관대학교 정보통신공학부) ;
  • 송준태 (성균관대학교 정보통신공학부)
  • Published : 2007.09.01
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Abstract

In this study we present the effect of annealing temperatures on the structural, electrical and optical characteristics of Ga-doped ZnO (GZO) films. GZO target is deposited on coming 7059 glass substrates by DC sputtering. and then GZO films are annealed at temperatures of 400, 500, $600^{\circ}C$ in air ambient for 20 min. in this case of as-grown film, it shows the resistivity of $6{\times}10^{-1}{\Omega}{\cdot}cm$ and transmittance under 85%, whereas the electrical and optical properties of film annealed at $500^{\circ}C$ are enhanced up to $1.9{\times}10^{-3}{\Omega}{\cdot}cm$ and 90%, respectively.

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References

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