• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.817-821
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• 2000

In this work, we have investigated the dependence of annealing temperature(T$\_$a/) on optical and electrical properties of amorphous hydrogenated SiC(a-SiC:H) films. The a-SiC:H films were deposited on corning glass and p-type Si(100) wafer by PECVD (plasma enhanced vapor deposition) using SiH$_4$+CH$_4$+N$_2$ gas mixture. The experimental results have shown that the optical energy band gap(E$\_$opt/)of the thin films annealed at high temperatures have shown that the graphitization of carbon clusters and micro-crystalline silicon occurs. The current-voltage characteristics have shown good electrical properties at the annealed films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.792-797
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• 2009

In this paper, CdS thin films for the use of window layer in solar cell were fabricated by vacuum evaporation method to improve the reproducibility, The electrical and optical properties of thin films with the variations of substrates temperature and the variations of the film thickness were investigated. As increasing the substrates temperature the resistivities of films were increased. The samples transmissivity were shown over 70% when the wavelength were above 500 nm. In the films with 280 nm thickness, its transmissivity were reached 100%. The resistivities of the samples were decreased as increasing its thickness.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.63.2-63.2
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• 2012

One-dimensional nanowires (NW)/nanorods are under intense investigation in materials science due to their potential applications in many electronic devices. Since the properties required for these applications are greatly influenced by their microscopic structures, it is important to understand the relation between the microstructures with their optical and electric properties. In this study, Ag nanowires were synthesized in various dimensions and coated onto PET films to form transparent electrode. Their optical and electrical properties were studied in terms of their microstructures. Highly transparent (>90%), low haze transparent electrode films were successfully fabricated with surface resistance as low as (~50 ${\Omega}$/>).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.481-484
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• 1999

The undoped-InSe and Sn-doped InSe single crystals were grown by vertical Bridgman method and their properties were invesigated. These crystals were obtained by lowering the quartz ampoule for growth in the furnace and growth rate at optimum condition is 0.4mm/hr. The orientations and the crystallinites of these crystals were identified by X-ray diffraction(XRD), double crystal rocking curve(DCRC) and etch-pit density(EPD) measurements. From the Raman spectrum at room temperature, TO, LO modes together with their overtones and combinations were observed. Optical properties were investigated by photoluminescence at 12K and direct band gap of these crystals obtained from optical absorption spectrum. Compared with undoped-lnSe, electrical properties of Sn-doped InSe were increased and the electrical conductivity type were n-type. But electrical properties along growth direction of crystals and radial direction of wafer showed nearly uniform distribution.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.641-646
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• 2011

Ga-doped ZnO-$SnO_2$ (ZSGO) films were deposited by rf magnetron sputtering and their structural and electrical properties were investigated. In order to fabricate the target for sputtering, the mixture of ZnO, $SnO_2$ (1:1 weight ratio) and $Ga_2O_3$ (3.0 wt%) powder was calcined at $800^{\circ}C$ for 1 h. The substrate temperature was varied from room temperature to $300^{\circ}C$. The crystallographic properties and the surface morphologies of the films were studied by X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). The optical transmittances of the films were measured and the optical energy band gaps were obtained from the absorption coefficients. The resistivity variation with substrate temperature was measured. Auger electron spectroscopy was employed to find the atomic ratio of Zn, Sn, Ga and O in the film deposited at room temperature. ZSGO films exhibited the optical transmittance in the visible region of more than 80% and resistivity higher than $10\;{\Omega}cm$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.160-163
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• 2002

Silica waveguide for an integrated diffractive optical head system was designed and fabricated. The waveguide was designed to optimize the optical efficiency of red and/or blue laser source, and a lab-made RF magnetron sputter was adopted to deposit silica cladding and core layers on SiO$_2$/Si substrates. The cladding and core layers were formed using commercial targets, and the former was done with ＃7740 and the latter with BK7 and BAK4, respectively The surface roughness of the waveguide layers was measured to be 30.3${\AA}$ for BK7 and 17.8${\AA}$ for BAK4, and the difference of refractive indices between core and cladding layers was 0.9% and 2.5%, respectively. The waveguide fabricated with the core layer of BK7 showed better optical properties when the final diffractive optical probe heads were measured with red laser(650nm) source.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.164-167
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• 1988

This paper reports optical properties and hole formation of a 488nm-optimumed trilayer structure utiluzed Te-based thin films as a recording layer, and the application of trilayer to 830nm. The optical recording characteristics of metallic recording media are enhanced significantly by incoporating the metal (Al) layer into an antireflection trilayer structure. Due to the interference condition inherent in the design of the trilayer structure, reflectance from holes is ranked a low fraction. the hole formation is carried out by laser by $Ar^+$ laser(488nm). For 20nsec laser pulse duration, the hole opening threshold power of $(Te_{86}Se_{14})_{50}Bi_{50}$ trilayer is lower than that of monolayor that used in this experiments. Hole shapes of the whole sample were clean. For the application of the diode laser, the thickness of dielectric is varied by$\lambda$/4n. In order to compare the monolayer with the trilayer reflectance was measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.16-19
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• 1997

We have investigated the optical properties of a Ti:LiNbO$_3$ optical waveguide which was fabricated by Ti-diffusion in a alto atmosphere, and propose an effective method of polishing waveguide. This method was regarded to be applicable to waveguide fabrications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.747-750
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• 2000

In this work, we investigated the dependence of optical and electrical properties of amorphous hydrogenated SiC (a-SiC:H) films on annealing temperature(T$\sub$a/). The a-SiC:H films were deposited by PECVD(plasma enhanced vapor deposition) on coming glass, p-type Si(100) wafer using SiH$_4$+CH$_4$+N$_2$gas mixture. The experimental results have shown that the optical energy band gap(E$\sub$g/) of the a-SiC thin films unchanged in the range of T$\sub$a/ from 400$^{\circ}C$ to 600$^{\circ}C$. The Raman spectrum of the thin films, annealed at high temperatures, has shown that graphitization of carbon clusters and micro-crystalline silicon occurs. The current-voltage characteristics have shown good electrical properties at the annealed films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.561-565
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• 1999

We measured the optical properties in Ag/chalcogenide films with the exposure of 325nm-Held laser In addition we have investigated the Ag doping mechanism as considering the changes of Ag-concentration distribution and optical energy gap ( $E_{op}$ ) with Photon-dose. The "windows" characteristics of Ag thin film occur around the wavelength of 325 nm and the Ag is evaluated to be transparent, without an absorption, in the region. While the $E_{op}$ of S $b_2$ $S_3$ thin film was changed largely by an exposure of HeNe laser(632.8 nm) an exposure of HeCd laser resulted in relatively small variation of $E_{op}$ . Therefore it is thought that photon absorption at the metal layer plays an important role in Ag photodoping.on at the metal layer plays an important role in Ag photodoping.