• Transactions on Electrical and Electronic Materials
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• 제14권3호
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• pp.160-163
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• 2013

We investigated the effect of light intensity and wavelength of a solar cell device by using photoconductive atomic force microscopy (PC-AFM). The $POCl_3$ diffusion doping process was used to produce a p-n junction solar cell device based on a Poly-Si wafer and the electrical properties of prepared solar cells were measured using a solar cell simulator system. The measured open circuit voltage ($V_{oc}$) is 0.59 V and the short circuit current ($I_{sc}$) is 48.5 mA. Also, the values of the fill factors and efficiencies of the devices are 0.7% and approximately 13.6%, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, was used for direct measurements of photoelectric characteristics in local instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics were observed. Results obtained through PC-AFM were compared with the electric/optical characteristics data obtained through a solar simulator. The voltage ($V_{PC-AFM}$) at which the current was 0 A in the I-V characteristic curves increased sharply up to 1.8 $mW/cm^2$, peaking and slowly falling as light intensity increased. Here, $V_{PC-AFM}$ at 1.8 $mW/cm^2$ was 0.29 V, which corresponds to 59% of the average $V_{oc}$ value, as measured with the solar simulator. Also, while light wavelength was increased from 300 nm to 1,100 nm, the external quantum efficiency (EQE) and results from PC-AFM showed similar trends at the macro scale, but returned different results in several sections, indicating the need for detailed analysis and improvement in the future.

• 한국전기전자재료학회논문지
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• 제26권8호
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• pp.614-619
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• 2013

Recently, remote phosphor is reported for white LED enhancing of phosphor efficiency compared with conventional phosphor-based W-LED. In this study, Remote phosphor was produced by screen printing coating on glass substrate with phosphor contents rated paste and heat treatment. The paste consists of phosphor, lowest softening glass frit and organic binders. Remote phosphor can be well controlled by varying the phosphor content rated paste. After mounting remote phosphor on top of blue LED chip, CCT, CRI, and luminance efficiency were measured. The measurement results showed that CCT, CRI, and luminance efficiency were 6,645, 68, and 1,16l m/W in phosphor 80 wt.% remote phosphor sintered at $600^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제31권7호
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• pp.502-509
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• 2018

Epitaxial ZnO nanowires (NWs) were synthesized on sapphire (001) substrates using a hydrothermal process. The effects of the pH value of the precursor solution on the structural and optical properties of the resulting NWs was studied. The epitaxial relationship and the domain matching configuration between the sapphire (001) substrate and the as-grown ZnO NWs were determined using synchrotron X-ray diffraction measurements. The (002) plane of $w{\ddot{u}}rtzite$ ZnO NW grows in the surface normal direction parallel to the sapphire (001) direction. However, three types of in-plane domain matching configurations were observed, such as the on-position, $30^{\circ}$-rotated position, and ${\pm}8.5^{\circ}$-rotated position relative to the on-position, which might be attributed to inheriting the in-plane domain configuration of the ZnO seed layer.

• 한국결정성장학회지
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• 제20권5호
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• pp.227-231
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• 2010

광촉매 특성을 지닌 초친수 $TiO_2$ 박막을 액상증착법에 의해 유리 기판 위에 성공적으로 제조하였다. 제조된 $TiO_2$ 박막은 $70^{\circ}C$에서 박막표면에 $TiO_2$ 나노 입자들을 형성하였다. $TiF_4$ 용액의 침적시간이 증가됨에 따라 박막의 두께도 일정하게 증가되었다. $TiO_2$ 박막은 약 $5^{\circ}$ 이하의 접촉각과 가시영역에서 약 75~90 %의 투과율을 보여주었다. 또한 제조된 $TiO_2$ 박막은 자외선 조사에 의해 메칠오렌지 용액을 분해하는 광촉매 특성을 보여주었다. 침적시간 조건에 따라 제조된 박막의 표면 구조, 광학적 특성, 접촉각을 FE-SEM, AFM, UV-Vis, contact angle meter를 이용하여 측정하였다.

• 한국기계가공학회지
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• 제2권2호
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• pp.14-21
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• 2003

Rapid prototyping(RP) has been used for design verification and proto sample or mold manufacturing. Many RP systems have been introduced into the market during the past 15 years. However, until now, the systems have used mainly for external physical models (mono function), and have the basic but critical limitation of one material on one stage (mono material). To overcome the limitations of mono-material and mono-function of conventional. RP systems, the concept of Functional Phototype Development (FPD) is newly proposed in this paper FPD provides the necessary prototype functions such as mechanical, optical, chemical and electrical properties in order to meet the broad requirements of the industry. The paper illustrates the representative achievements of electronic components such as the multi-layer printed circuit board(MLB). Experimental results demonstrate that FPD has great potential applied to broad industrial uses and that It Will be a powerful tool in the neat future.

• 한국진공학회지
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• 제17권5호
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• pp.455-460
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• 2008

최근까지 유기박막의 제조에 있어서 진공 증착 혹은 스핀코팅법의 대체방법으로 펄스 레이져 증착법 (PLD: Pulsed laser deposition)에 많은 관심이 되고 있는 실정이다. 본 논문에서는 유기발광소자(OLED)의 제작을 위해 $Alq_3$(aluminato-tris-8-hydroxyquinolate)와 TPD의 유기물을 질소($N_2$)분위기 상태에서 KrF($\lambda$=278 nm) 엑시머 레이저를 이용한 PLD법으로 증착하였고, 증착공정변화에 따른 증착된 박막의 분자 및 광학적 특성의 효과를 PL과 FT-IR등을 이용하여 평가하였다.

• 한국결정성장학회지
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• 제9권3호
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• pp.303-308
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• 1999

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides(SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single-crystalline 4H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 4H-SiC homoepitaxial layers using a SiC-uncoated atmospheric pressure chamber and carried out using off-oriented substrates prepared by a modified Lely method. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, Raman spectroscopy, photoluninescence(PL), scanning electron microscopy(SEM) and other techniques were utilized. The best quality of 4H-SiC homoepitaxial layers was observed in conditions of growth temperature $1500^{\circ}C$ and C/Si flow ratio 2.0 of $C_{3}H_{8}\;0.2\;sccm\;&\;SiH_{4}\;0.3\;sccm$. The growth rate of epilayers was about $1.0\mu\textrm{m}/h$ in the above growth condition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.463-465
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• 2005

The $ZnGa_2O_4$:Mn phosphor was synthesized through solid-state reactions at the various molar ratio of Mn from 0.002 % to 0.01 %. Structural and optical properties of the $ZnGa_2O_4$:Mn phosphor was investigated by using X-ray diffraction (XRD), and cathodoluminescence (CL) measurements. The XRD patterns show that the Mn-doped $ZnGa_2O_4$ has a (311) main peak and a spinel phase. Also the emission wavelength shifts from 420 to 510 nm in comparison with $ZnGa_2O_4$ when Mn is doped in $ZnGa_2O_4$. These results indicate that $ZnGa_2O_4$:Mn phosphors hold promise for potential applications in field-emission display devices with high brightness operating in green spectral regions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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• pp.44-44
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• 2008

To date, rubbing has been widely used to align LC molecules uniformly. Although rubbing can be simple, it has fundamental problems such as the generation of defects by dust and static electricity, and difficulty in achieving a uniform LC alignment on a large substrate. Therefore, non contact alignment has been investigated. Ion beam induced alignment method, which provides controllability, nonstop process, and high resolution display. In this study, we investigated liquid crystal (LC) alignment with ion beam (IB) that non contact alignment technique on polyimide and electro-optical characteristics of twisted nematic (TN)-liquid crystal display (LCD) on the polyimide under various ion beam angles. In this experiment, Polyimide layer was coated on glass by spin-coating and Voltage-transmittance(VT) and response time characteristics of the TN cell were measured by a LCD evaluation system. The good characteristics of the nematic liquid crystal (NLC) alignment with the ion beam exposure polyimide surface was observed. The tilt angle of NLC on the PI surface with ion beam exposure can be measured under $1^{\circ}$ for all of irradiation angles. In addition, it can be achieved the good EO properties, and residual DC property of the ion beam aligned TN cell on polyimide surface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.125-126
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• 2006

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films. $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$. $345cm^2/V{\cdot}s$ at 293 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ},X$) having very strong peak intensity. Then. the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule. an activation energy of impurity was 137 meV.