• Bulletin of the Korean Chemical Society
• /
• 제33권12호
• /
• pp.3950-3956
• /
• 2012

In order to improve the bioactivity and mechanical properties of hydroxyapatite (HAp), chitosan (Chi) was in situ combined into HAp to fabricate a composite scaffold by a sublimation-assisted compression method. A highly porous film with sufficient mechanical strength was prepared and the bioactivity was investigated by examining the apatite formed on the scaffolds incubated in simulated body fluid. In addition, the cytotoxicity of the HAp/Chi composite was studied by evaluating the viability of murine fibroblasts (L-929 cells) exposed to diluted extracts of the composite films. The apatite layer was assessed using scanning electronic microscopy, inductively coupled plasma-optical emission spectrometry and weight measurement. Composite analysis showed that a layer of micro-sized, needle-like crystals was formed on the surface of the composite film. Additionally, the WST-8 assay after L-929 cells were exposed to diluted extracts of the composite indicated that the HAp/Chi scaffold has good in vitro cytocompatibility. The results indicated that HAp/Chi composites with porous structure are promising scaffolding materials for bone-patch engineering because their porous morphology can provide an environment conductive to attachment and growth of osteoblasts and osteogenic cells.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
• /
• pp.673-675
• /
• 2004

This study proposes controller with voltage-compensated drivers for producing gray-scaled pictures on passive matrix organic light emitting diodes (PMOLEDs) panels. The controller includes voltage type drivers so the output impedance of the driver is far less than that of the current-type driver. Its low output impedance provides better electron-optical properties than those of traditional current drivers. A free running clock and a group of counters are applied to the gray-scaled function so that phase lock loop (PLL) circuit can be reduced in the controller. A pre-charge function is used to enhance performance of the luminance of an active OLED pixel. As a result, distribution of the low gray level portion is achieved linear relationship with input data. In this work, the digital part of the proposed controller is implemented using FPGA chips, and analog parts are combined with a digital-analog converter (DAC) and analog switches. A still image is displayed on a $48^{\ast}64$ PMOLEDs panel to assess the luminance performance fir the controller. Based on its cost requirement and luminance performance, the controller is qualified to join the market for driving PMOLEDs panels.

• 한국진공학회지
• /
• 제7권s1호
• /
• pp.106-117
• /
• 1998

Fluorocarbonated-SiO2 films were deposited on p-type Si(100) substrate using FSi$(OC_2H_5)_3$ (FTES), and $O_2$ mixture gases by a helicon plasms source. High density $O_2$/FTES/Ar plasma of ~$10^{12} \textrm{cm}^{-3}$ is obtained at low pressure (<3mTorr) with RF power above 900 W in the helicon plasma source. Optical emission spectroscopy (OES) is used to study the relation between the relative densities of the radicals and the film properties. The FTES and $O_2$ gases are greatly dissociated at the helicon mode that is launched at the above threshold plasma density. FTIR and XPS spectra shows that the film has Si-F, and C-F bonds during the formation process of the film which may lower the dielectric constant greatly. The relative dielectric constant, leakage current density, and dielectric breakdown voltage are about 2.8, $8\times10^{-9}\textrm{A/cm}^2$, and > 12 MV/cm, respectively.

• Bulletin of the Korean Chemical Society
• /
• 제35권5호
• /
• pp.1397-1402
• /
• 2014

The complete active space self-consist field method followed by the internally contracted multireference configuration interaction method has been used to compute the potential energy curves of $X^2\prod_g$, $a^4\prod_u$, $A^2\prod_u$, $b^4\sum_{g}^{-}$, and $B^2\sum_{g}^{-}$ states of $S{_2}^+$ cation with large correlation-consistent basis sets. Utilizing the potential energy curves computed with different basis sets, the spectroscopic parameters of these states were evaluated. Finally, the transition dipole moment and the Franck-Condon factors of the transition from $A^2\prod_u$ to $X^2\prod_g$ were evaluated. The radiative lifetime of $A^2\prod_u$ is calculated to be 887 ns, which is in good agreement with experimental value of $805{\pm}10$ ns.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.364.2-364.2
• /
• 2014

Magnesium oxide (MgO) thin films have attracted great scientific and technological interest in recent decades. Because of its distinguished properties such as a wide band gap (7.2 eV), a low dielectric constant (9.8), a low refractive index, an excellent chemical, and thermal stability (melting point=$2900^{\circ}C$), it is widely used as inorganic material in diverse areas such as fire resistant construction materials, optical materials, protective layers in plasma display panels, buffer layers of multilayer electronic/photonic devices, and perovskite ferroelectric thin films. Precursor used in the ALD requires volatility, stability, and low deposition temperature. Precursors using a heteroleptic ligands with different reactivity have advantage of selective reaction of the heteroleptic ligands on substrate during ALD process. In this study, we have synethesized new heteroleptic magnesium precursors ${\beta}$-diketonate and aminoalkoxide which have been widely used for the development of precursor because of the excellent volatility, chelating effects by increasing the coordination number of the metal, and advantages to synthesize a single precursor. A newly-synthesized Mg(II) precursor was adopted for growing MgO thin films using ALD.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.169-169
• /
• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

• Korean Chemical Engineering Research
• /
• 제59권2호
• /
• pp.254-259
• /
• 2021

고밀도 C4F8 플라즈마에서 증착된 불화탄소막의 광학적 및 전기적 특성을 소스파워와 압력을 변화하며 분석하였다. 고밀도 C4F8 플라즈마에서 증착된 불화탄소막의 F/C 비율은 2단계 증착 메커니즘의 작용으로 소스파워가 증가할수록 증가하였고 압력이 증가할수록 감소하였다. 고밀도 C4F8 플라즈마에서 증착된 불화탄소막의 F/C 비율 변화는 불화탄소막의 광학적 및 전기적 특성 변화에 직접적으로 영향을 끼쳤다. 즉, 불화탄소막의 굴절률은 F/C 비율 변화 양상과는 달리 소스파워가 증가할수록 감소하였고 압력이 증가할수록 증가하였는데 이는 F/C 비율이 증가할수록 전자분극작용이 억제되고 불화탄소막의 망상조직이 약화되어 굴절률이 감소하기 때문이었다. 불화탄소막의 비저항은 F/C 비율 변화와 같이 소스파워가 증가할수록 증가하였고 압력이 증가할수록 감소하였는데 이는 F/C 비율이 증가할수록 주변 전자들을 반발하려는 경향이 강해져서 비저항이 증가하기 때문이었다. 고밀도 C4F8 플라즈마에서 증착된 불화탄소막의 F/C 비율 조절로 불화탄소막의 광학적 및 전기적 특성을 직접적으로 변화할 수 있으므로 불화탄소막이 반도체소자제조공정에서 저 유전상수 물질 대체용으로 가능할 수 있음이 예상된다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
• /
• pp.1378-1380
• /
• 2005

The efficiency and the optical properties of the yellow organic light-emitting devices (OLEDs) were significantly affected by the existence of the multiple quantum well (MQW) structures consisting of N, N'- bis-(1-naphthyl)-N, N'-diphenyl-1,1-biphenyl-4,4'- diamine(NPB)/5,6,11,12 - tetraphenylnaphthacene (rubrene). The maximum efficiency and the luminance of OLEDs with 3-periods of the NPB/rubrene MQWs at 41.6 $mA/cm^2$ were 3.66 cd/A and 1524 $cd/m^2$, respectively, and their Commission Internationale de l'Eclairage chromaticity coordinates were (0.34, 0.55), which indicates a yellow color. These results indicate that the efficiencies of the OLEDs by using MQW emitting layers can be improved.

• 한국초전도ㆍ저온공학회논문지
• /
• 제9권2호
• /
• pp.15-18
• /
• 2007

The sub micron sized spherical $MgB_2$ powders were synthesized by spray reaction method. $MgB_2$ tapes with Al addition were fabricated by Powder in Tube (PIT) method. The superconducting property and microstructure of Al doped $MgB_2$ tapes were characterized by X-ray diffraction, optical microscopy and transport measurement under magnetic field. The $J_c$ value of $MgB_2$ tapes was increased with 10 vol. % Al addition. The $J_c$ value of 5,500 A/$cm^2$ and 11,000 A/$cm^2$ at 4.2 K and 5 T were obtained for the $MgB_2$ tape and 10 vol. % of Al added $MgB_2$ tape without heat treatment, respectively. The $J_c$ value of 8,000 A/$cm^2$ and 33,000 A/$cm^2$ at 4.2 K and 5 T were obtained for the $MgB_2$ tape and 10 vol. % of Al added $MgB_2$ tape with heat treatment, respectively. The $J_c$-B curves show enhancement in $J_c$ (B), which suggests that the microstructure and transport properties of $MgB_2$ tapes have been improved with Al addition.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
• /
• pp.857-860
• /
• 2004

Cubic CdS thin film with the strongest XRD peak (111) at diffraction angle $(\theta)$ of 26.5 was well made at substrate temperature of $150^{\circ}C$. At that time, lattice constant a of the thin film was $5.79{\AA}$, grain size of that was more over ${\mu}m$ and it's resistivity was over $10^3{\Omega}cm$. And the peak of diffraction intensityat miller index (111) of CdS:In thin film with dopant In of 1 atom% was shown higher about 20 % than undoped CdS thin film. Also, CdS:In thin film had in part hexagonal structure among cubic structure as secondary phase. Lattice constant of a and grain size of secondary phase of the film with dopant In of 1 atom% was $5.81{\AA}$ and around $1{\mu}m$ respectively The lowest resistivity of $5.1{\times}10^{-3}{\Omega}cm$ was appeared on dopant In of 1.5 atom%. Optical band gap of undoped CdS thin film was 2.43 eV and CdS:In thin film with dopant In of 0.5 atom% had the largest band gap 2.49 eV.