• Journal of the Semiconductor & Display Technology
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• v.9 no.3
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• pp.71-74
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• 2010

In this study the optical properties, such as relative transmittance and reflectance of PDP were analyzed with 3D optical code. Because of the electrode structure, the reference model shows 21.3 % higher transmittance than the test model and the reference model shows 16.6 % higher reflectance than the test model. The calculated reflectance of reference and test models is compared to the measured reflectance and the difference between calculation and measurement is 4.9 %.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.26-29
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• 1992

In this study, We made use of interelectrode capacitively coupled type plasma polymerization apparatus in order to make th organic optical thin films. We adopted in Benzen. Styrene, which have optical function in the organic world. It is manufactured polymerization thin films and examined optics properties by it respectively. We have known that the refractive index decreased as discharging power increased. At the middle wave length as 550[nm], the refractive index of Styrene is smaller than one of Benzen. Then, it is known that measured results are valid because the extinction coefficient(K) is about 10$\^$-4/ for variation of refractive index.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.969-973
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• 2009

In this study, the electrical and optical properties of $(SiO_2)_x(ZnO)_{100-x}$ (SZO) films prepared on the coming 7059 glass substrates by using rf-magnetron sputtering method are investigated. The deposition rate becomes maximum near 3 wt.% and gradually decreases when the $SiO_2$ content further increases. The growth rates of the SZO film with $SiO_2$ content of 3 wt.% is $4\;{\AA}/s$. We found that the average transmittance of all films is over 80% in the wavelength range above 500 nm. The optical band gap were decreased from 3.52 to 3.33 eV as an increase the deposition thickness. X-ray diffraction patterns showed that the film with a relatively low $SiO_2$ content (< 4 wt.%) is amorphous. SZO film with the $SiO_2$ contents of 2 wt.% showed the resistivity of about $3.8{\times}10^{-3}\;{\Omega}{\cdot}cm$. The sheet resistance decreases with increasing the heat treatment temperature.

• Bulletin of the Korean Chemical Society
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• v.34 no.1
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• pp.128-132
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• 2013

L-Arginine semi-oxalate (LASO) single crystal has been grown by solution growth technique at room temperature. The crystal structure and lattice parameters were determined for the grown crystal by single crystal X-ray diffraction studies. Photoluminescence studies confirm the violet fluorescence emission peak at 395 nm. Optical constants like band gap, refractive index, reflectance, extinction coefficient and electric susceptibility were determined from UV-VIS-NIR spectrum. The dielectric constant, dielectric loss and ac conductivity of the compound were calculated at different temperatures and frequencies to analyze the electrical properties. The solid state parameters such as plasma energy, Penn gap, Fermi energy and polarizability were calculated to analyze second harmonic generation (SHG). Nonlinear optical property was discussed to confirm the SHG efficiency of the grown crystal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.47-50
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• 2000

The optical characteristics of merocyanine dyes have been investigated widely due to their possible application to the high efficiency photo-electric devices. The optical systems are mostly fabricated using vacuum evaporation, casting and Langmuir-Blodgett method and the arrangement and orientation of dye molecules is one of the most important factors in the study on the optical characteristics. In this study, we fabricated the molecular systems through the LB techniques and investigated the optical characteristics of merocyanine dye LB film using the oscillation characteristics of quartz crystal. It was quite interesting behavior that the resistance and frequency shift at the parallel resonance under the UV irradiation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.9
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• pp.641-645
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• 2013

Chalcogenide glass has superior property of optical transmittance in the infrared region. Glass made using Ge-Se how many important optical applications. We have determined the composite formular of $Ge_{0.25}Se_{0.75}$ to be the GeSe chalcogenide glass composition appropriate for IR lenses. Also, the optical, thermal and physical characteristics of chalcogenide glass depended on the composition ratio. GeSe bulk sample is produced using the traditional melt-quenching method. The optical, structural, thermal and physical properties of the compound were measured by using Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), Differential scanning calorimeter (DSC), and Scanning electron microscope (SEM) respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.247-250
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• 2001

We studied optical properties of SiON thin-film in the applications of optical waveguide. SiON thin-film was grown in $300^{\circ}C$ by PECVD(plasma enhanced chemical vapor deposition) system. The change of SiON thin-film composition and refractive Index was studied as a function of varying $NH_3$ gas flow rate. As $NH_3$ gas flow rate was increased, Quantity of N and refractive index were increased at the same time. By the results, we could form the SiON thin-film to use of a waveguide with refractive index of 1.6. We analyzed the conditions of the thin-film with FTIR(fourier transform infrared) and OES (optical emission spectroscopy). N-H bonding($3390cm^{-1}$ ) can be removed by thermal annealing. And we could observe the SiH bonding state and quantity by OES analysis in $SiH_4$

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.2
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• pp.1555-1562
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• 2015

Metal oxide semiconductors have been applied in several areas, such as solar cells, sensor, optical elements and displays, due to the high surface area, unique electrical and optical characteristics. Zinc oxide among the metal oxide has excellent physicochemical properties. Zinc oxide is a n-type semiconductor with a wide direct transition band gap of 3.37 eV at room temperature and large exciton binding energy of 60 meV. Cation-doped zinc oxide studies were conducted to complement the electrical and optical characteristics. In this paper, Al-doped ZnO was synthesized by hydrothermal synthesis using microwaves. ZnO was synthesized by adjusting the precursor ratio and using different dopants. The optimal ZnO synthesis conditions for crystal shape and optical properties were determined. The optical properties of aluminum doped zinc oxide were then examined by SEM, XRD, PL, UV-vis absorbance spectrum, and EDS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1985.01a
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• pp.21-23
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• 1985

By adding La$_2$O$_3$ to optical multicomponent glass composition, after making mother glass and core fiber that enable to enlarge the infrared transmittance region, then surveyed the optical properties. Through thermal analysis of the glass abstained by melt-quenching after selecting stable basic composition on devitrification and replace SiO$_2$ by 4-12wt% La$_2$O$_3$. As La$_2$O$_3$ increases up to l2wt% transition temperature, refractive index, density, deformation temperature increased, whereas thermal expansion coefficient decreased. As a result of inspectig transmittance in UV/VIS/IR region, visable region indicated the decrease of transmittance by increasing the La$_2$O$_3$ and transmittance region was enlarged by increasing the La$_2$O$_3$ in IR region. Also, fabricate core fiber at 820$^{\circ}C$ and severy the optical loss we could fact that La$_2$O$_3$ composition added 12wt% showed the minimum optical loss.

• Korean Journal of Materials Research
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• v.21 no.9
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• pp.491-496
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• 2011

Transparent conducting oxides (TCOs) used in the antireflection layer and current spreading layer of heterojunction solar cells should have excellent optical and electrical properties. Furthermore, TCOs need a high work function over 5.2 eV to prevent the effect of emitter band-bending caused by the difference in work function between emitter and TCOs. Sn-doped $In_2O_3$ (ITO) film is a highly promising material as a TCO due to its excellent optical and electrical properties. However, ITO films have a low work function of about 4.8 eV. This low work function of ITO films leads to deterioration of the conversion efficiency of solar cells. In this work, ITO films with various Zn contents of 0, 6.9, 12.7, 28.8, and 36.6 at.% were fabricated by a co-sputtering method using ITO and AZO targets at room temperature. The optical and electrical properties of Zn-doped ITO thin films were analyzed. Then, silicon heterojunction solar cells with these films were fabricated. The 12.7 at% Zn-doped ITO films show the highest hall mobility of 35.71 $cm^2$/Vsec. With increasing Zn content over 12.7, the hall mobility decreases. Although a small addition of Zn content increased the work function, further addition of Zn content over 12.7 at.% led to decreasing electrical properties because of the decrease in the carrier concentration and hall mobility. Silicon heterojunction solar cells with 12.7 at% Zn-doped ITO thin films showed the highest conversion efficiency of 15.8%.