• 한국전기전자재료학회논문지
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• 제24권8호
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• pp.616-621
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• 2011

In this paper, CdS thin films, which were widely used window layer of the CdTe and the Cu(In,Ga)$Se_2$ thin film solar cell, were grown by chemical bath deposition, and effects of pH of reaction solution on the structural and optical properties were investigated. For pH<10.5, as the pH of reaction solution was higher, the deposition rate of CdS films was increased by improving ion-by-ion reaction in the substrate surface and the crystallinity of the films was improved. However, when the pH was higher than 10.5, the deposition rate was decreased because of smaller $Cd^{2+}$ ion concentration in the reaction solution. Also, the crystallinity of the films were deteriorated. The CdS films deposited at lower pH showed poor optical transmittance due to adsorbed colloidal particles, while the transmittance was improved for higher pH.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.345-345
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• 2007

ZnS/$Na_3AlF_6$/ZnS/Cu multi-layered thin film were simulated by EMP. EMP is a comprehensive software package for the design and analysis of optical thin film. ZnS and $Na_3AlF_6$ was selected as a high refractive index material and low refractive index material And Cu was selected as mid reflective material. Optical properties including color effect were systematically studied in terms of different low refractive index materials thickness. $Na_3AlF_6$ were changed 0.25, 0.5, 0.75, $1.0{\lambda}$. The thin film showed $0.25{\lambda}$ : blue, purple / $0.5{\lambda}$ : yellow $0.75{\lambda}$ : blue, purple, red / $1.0{\lambda}$ : yellow, green, blue, purple. It was becaused by different optical thickness of $Na_3AlF_6$. The maximum of optical interference by refractive layer.

• 한국전기전자재료학회논문지
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• 제26권3호
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• pp.183-189
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• 2013

The chalcogenide glass has superior optical properties in IR region transmittances. We have determined the composition of GeSbSe chalcogenide glass for the application of good IR lenses, resulting in the composite rate of $Ge_{19}Sb_{23}Se_{58}$. The optical, structural, thermal and physical properties were measured by Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), Differential scanning calorimeter (DSC), X-ray computed tomography (X-ray CT) respectively. The fabrication of the chalcogenide glass lens for infrared optics applications was proposed using a diamond turning machining technology which is known as the suitable ways for the production cost reduction and the accurate fabrication process control.

• 열처리공학회지
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• 제28권6호
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• pp.291-295
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• 2015

IGZO single layer and $IGZO/TiO_2$ bi-layered films were deposited on glass substrate at room temperature with radio frequency magnetron sputtering to investigate the effect of $TiO_2$ buffer layer on the electrical and optical properties of the films. For all deposition, the thickness of IGZO and $TiO_2$ Buffer layer was kept at 100 and 5 nm, respectively. In a comparison of figure of merit, IGZO films with a 5-nm-thick $TiO_2$ buffer layer show the higher figure of merit ($8.40{\times}10^{-5}{\Omega}^{-1}$) than that of the IGZO single layer films ($6.23{\times}10^{-5}{\Omega}^{-1}$) due to the enhanced optical transmittance and the decreased sheet resistance of the films. The observed results mean that a 5 nm thick $TiO_2$ buffer layer in the $IGZO/TiO_2$ films results in better electrical and optical performance than conventional IGZO single layer films.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.63.2-63.2
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• 2012

One-dimensional nanowires (NW)/nanorods are under intense investigation in materials science due to their potential applications in many electronic devices. Since the properties required for these applications are greatly influenced by their microscopic structures, it is important to understand the relation between the microstructures with their optical and electric properties. In this study, Ag nanowires were synthesized in various dimensions and coated onto PET films to form transparent electrode. Their optical and electrical properties were studied in terms of their microstructures. Highly transparent (>90%), low haze transparent electrode films were successfully fabricated with surface resistance as low as (~50 ${\Omega}$/>).

• 전기학회논문지
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• 제60권6호
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• pp.1178-1182
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• 2011

The best methods for distribution controled of LED lighting fixtures is control to designed LED chip array, lens and reflector. However, lens design need distribution design to reflector for low-wattage LED lighting because of difficulty of production and reduction of light efficiency. In addition, it needs maximize of thermal performance to improve the efficiency and reliability of device. As a result, for the height of reflector 40[mm] and Inclination 25[$^{\circ}$], we can see the best distribution properties, and, in the thermal properties, junction temperature MCPCB 62.9 [$^{\circ}C$], FR4 PCB 89.6 [$^{\circ}C$], FR4 PCB from Via-hole is 63.1 [$^{\circ}C$]. it may improve for thermal properties for makes the Via-hole.

• 한국전기전자재료학회논문지
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• 제18권3호
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• pp.226-230
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• 2005

This paper describes the photocatalytic degradation properties by oxygen partial pressure for TiO$_2$ thin films fabricated by dc magnetron reactive sputtering. And the structural, chemical, optical and photocatalytic properties were investigated at various analysis system. When TiO$_2$ thin film was made at deposition time of 120 min and Ar:O$_2$ ratio of 60:40, the best properties were obtained. That results were as follows: thickness; 360∼370 nm, gram size; 40 nm, optical energy band gap; 3.4 eV and Benzene conversion in the photocatalytic degradation; 11 %.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.515-518
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• 2000

The electrochromic properties of $WO_{3}$/$MoO_{3}$ and $MoO_{3}$/$WO_{3}$ double-layers have been systemically studied. The double-layers were made by a e-beam evaporation method and investigated by studying optical modulation, transmittance, and cyclic voltammetry. The devices exhibit good optical properties with wavelength range of 400 to 1100 nm(visible and infrared) during coloration as a function of lithium ion charge injection. It has shown that the double-layer electrochromic thin films are improved the electrochromic properties, but the electrochemical properties are less stable.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.380-381
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• 2007

This paper reports on the deposition conditions and properties of ITO films used as electrode layer in a organic light emitting diodes on a PET substrate. The deposition technique employed was specially designed roll-to-roll sputtering. The oxide was deposited at room temperature in an argon and oxygen plasma on a transparent conducting ITO layer on a PET film. The influence of deposition parameters such as DC power, working pressure and oxygen partial pressure has been investigated, in order to obtain the best compromise between a high deposition rate and adequate electro-optical properties. Electrical and optical properties of ITO films were analyzed by Hall measurement examinations with van der pauw geometry at room temperature and UV/Vis spectrometer analysis, respectively. In addition, the structural properties and surface smoothness were measured by x-ray diffraction and scaning electron microscopy, respectively. From optimized ITO films grown by roll-to-roll sputter system, good electrical$(6.44{\times}10^{-4}\;{\Omega}-cm)$ and optical(above 86 % at 550 nm) properties were obtained. Also, the ITO films exhibited amorphous structure and very flat surface beacause of low deposition temperature.

• Transactions on Electrical and Electronic Materials
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• 제5권4호
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• pp.153-157
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• 2004

ITO thin films were deposited on PET and soda-lime glass substrates by a dc reactive magnetron sputtering of In-Sn alloy metal target without substrate heater and post-deposition thermal treatment. The dependency of rf-bias voltage and substrate power during deposition processing was investigated to control the electrical and optical properties of ITO films. The range of rf bias voltage is from 0 to -80 V and the substrate power is applied from 10 to 50 W. The minimum resistivity of ITO film is 5.4${\times}$10$^{-4}$ $\Omega$cm at 50 W power and rf-bias voltage of -20 V. The best transmittance of ITO films at 550 nm wavelength is 91 % in the substrate power of 30 W and rf-bias voltage of -80 V.