• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.467-468
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• 2009

For the manufacture of the $CuGaS_2$, Cu, Ga and S were vapor-deposited in the named order. Among them, Cu and Ga were vapor-deposited by using the Evaporation method in consideration of their adhesive force to the substrate so that the composition of Cu and Ga might be 1 : 1, while the surface temperature having an effect on the quality of the thin film was changed from R.T.[$^{\circ}C$] to $150[^{\circ}C$] at intervals of 50[$^{\circ}C$]. As a result, at 300[$^{\circ}C$]of the Annealing temperature, their chemical composition was measured in the proportion of 1 : 1 : 2. It could be known from this experimental result that it is the optimum condition to conduct Annealing on the $CuGaS_2$ thin film under a vacuum when the $CuGaS_2$ thin film as an optical absorption layer material for a solar cell is manufactured.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.284-284
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• 2009

We have fabricated semiconductor nanocrystals using phase separation on flexible substrates for future application in QD-LEDs. The phase separation between the CdSe semiconductor nanocrystals and TPD organic underlayer can occur during the solvent drying, and the CdSe may rise towards the surface of the coated films, which is arranged into close packed array called self-assembly process. In this work, the polyethylene naphthalate (PEN) films of $200{\mu}m$ thickness was used as a flexible substrate, which was coated with indium tin oxide(ITO) as a transparent electrode of <$15{\Omega}/cm^2$. A number of solvents such as chloroform, toluene, and hexane was used and their coating properties were investigated using the spin coating process. The dispersion of both QD and TPD was rather poor in toluene and hexane and resulted in rougher surface and some aggregates. Meanwhile, the surface roughness of templates can be a very critical issue in the fabrication of QD-LED devices. Some experiments was performed to reduce the ~4nm surface roughness of the PEN films and It can be decreased to the minimum of ~0.7nm. Also discussed are the optical properties of semiconductor nanocrystals used in this phase separation and possible large area and continuous coating process for future application.

• 한국전자파학회논문지
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• 제16권9호
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• pp.957-963
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• 2005

본 논문에서는 TSMC 0.25 ${\mu}m$ CMOS RF-Mixed mode 공정 기술을 이용하여 초고속 광통신 시스템의 수신부에 사용되는 광대역 transimpedance amplifier를 설계하였다. 특히 광대역을 구성하기 위해 cascode와 common-source 구조에 active inductor shunt peaking을 이용하여 설계 및 제작하였으며, 측정 결과 gain 변화 없이 -3 dB 대역폭 특성이 cascode는 0.8 GHz에서 $81\%$ 증가한 1.45 GHz, common-source는 0.61 GHz에서 $48\%$ 증가한 0.9 GHz 결과가 나왔으며, 전체 파워 소비는 바이어스 2.5 V를 기준으로 37 mW와 45 mW이며, transimpedance gain은 61 dB$\Omega$과 61.4 dB$\Omega$을 얻을 수 있었다. 그리고 input noise current density도 상용 TIA와 거의 비슷한 $5 pA/\sqrt{Hz}$와 $4.5 pA/\sqrt{Hz}$를 가지며, out put Return loss는 전 대역에서 -10 dB 이하의 정합 특성을 보였다. 그리고 전체 chip 사이즈는 $1150{\times}940{\mu}m^2$이다.

• 대한전자공학회논문지TE
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• 제39권1호
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• pp.9-15
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• 2002

본 논문은 청색 유기 EL 소자를 진공증착법으로 제작하여 그 특성을 분석하였다. 발광층 물질(A1q/sub 3/)에 게스트물질(Type I-TPB와 Type II-DPA)의 도핑농도(0.5∼2 wt%)를 변화시켜 청색발광소자를 제작하여 전기적, 광학적 특성을 조사하였다. Alq3에 도펀트의 농도를 증가함에 따라 청색에 해당하는 색좌표 점으로 이동하였다. Type I이 Type II의 경우보다 동작개시전압 및 구동전압이 낮게 나타났으며 휘도에서는 Type II가 밝게 나타났다. Alq/sub 3/에 DPA(2wt%)를 도펀트로 사용한 소자의 경우 인가전압 15V에서 휘도는 1282cd/m/sup 2/, 최대발광 파장은 476nm, 색좌표는(0.1273, 0.0672)으로 우수한 특성을 나타내었다.

• 한국결정성장학회지
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• 제13권5호
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• pp.241-246
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• 2003

ATO(antimony-doped tin oxide) 투명전도막을 sol-gel dip coating 방법에 의해 $SiO_2$/glass 기판 위에 성공적으로 제조하였다 ATO막의 결정상은 $SnO_2$상임을 확인하였고, 막의 두께는 withdrawal speed를 50 mm/minute로 코팅시 약 100 nm/layer였다. $SiO_2$/glass 기판 위에 코팅한 400 nm두께의 ATO 박막을 질소분위기에서 annealing한 후, 측정한 광 투과율과 전기 저항치는 각각 84%와 $5.0\times 10^{-3}\Omega \textrm{cm}$였다. 이러한 특성은 $SiO_2$막이 Na 이온의 확산을 제어하여 $Na_2SnO_3$ 및 SnO와 같은 불순물의 형성을 억제하고, 막 내부의 Sb의 농도와 $Sb^{3+}$에 대한 $Sb^{5+}$의 비를 증가시키는데 기여했기 때문으로 확인되었다. 또한, $N_2$ annealing은 $Sb^{5+}$뿐만 아니라 $Sn^{4+}$를 환원시킴으로써 전기전도도를 향상시킴을 확인하였다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1223-1227
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• 2005

Fine microgroove is the key component to fabricate micro-grating, micro-grating lens and so on. Conventional groove fabrication methods such as etching and lithography have some problems in efficiency and surface integrity. This study deals with the creation of ultra-precision micro grooves using non-rotational diamond tool and CNC machining center. The shaping type machining method proposed in the study allows to produce V-shaped grooves of $40\mu{m}$ in depth with enough dimensional accuracy and surface. For the analysis of machining characteristics in micro V-grooving, three components of cutting forces and AE signal are measured and processed. Experimental results showed that large amplitude of cutting forces and AE appeared at the beginning of every cutting path, and cutting forces had a linear relation with the cross-sectional area of uncut chip thickness. From the results of this study, proposed micro V-grooving technique could be successfully applied to forming the precise optical parts like prism patterns on light guide panel of TFT-LCD.

• 한국정밀공학회지
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• 제19권6호
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• pp.176-183
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• 2002

Plasma Display Panel(PDP) is a type of flat panel display utilizing the light emission produced by gas discharge. Barrier Ribs of PDP separating each sub-pixel prevents optical and electrical crosstalks from adjacent sub-pixels. The mold for forming the barrier ribs has been newly researched to overcome the disadvantages of conventional manufacturing processes such as screen printing, sand-blasting and photosensitive glass methods. The mold for PDP barrier ribs have stripes of micro grooves transferring glass-material wall. In this paper , Stripes of grooves of which width 48$\mu$m, depth 124$\mu$m , pitch 274$\mu$m was acquired by machining of single crystal silicon with dicing saw blade. Maximum roughness of the bottom of the grooves was 59.6 nm Ra in grooving Si. Barrier ribs were farmed with silicone rubber mold, which is transferred from grooved Si forming hard mold. Silicone rubber mold has the elasticity, which enable to accommodate the waviness of lower glass plate of PDP. The methods assisted by the microwave and UV was adopted for reducing the forming time of glass paste.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.35.1-35.1
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• 2011

New photovoltaic (PV) materials and manufacturing approaches are needed for meeting the demand for lower-cost solar cells. The prototypal thin-film photovoltaic absorbers (CdTe and $Cu(In,Ga)Se_2$) can achieve solar conversion efficiencies of up to 20% and are now commercially available, but the presence of toxic (Cd,Se) and expensive elemental components (In, Te) is a real issue as the demand for photovoltaics rapidly increases. To overcome these limitations, there has been substantial interest in developing viable alternative materials, such as $Cu_2ZnSnS_4$ (CZTS) is an emerging solar absorber that is structurally similar to CIGS, but contains only earth abundant, non-toxic elements and has a near optimal direct band gap energy of 1.4~1.6 ev and a large absorption coefficient of ${\sim}10^4\;cm^{-1}$. The CZTS absorber layers are grown and investigated by various fabrication methods, such as thermal evaporation, e-beam evaporation with a post sulfurization, sputtering, non-vacuum sol-gel, pulsed laser, spray-pyrolysis method and electrodeposition technique. In the present work, we report an alternative method for large area deposition of CZTS thin films that is potentially high throughput and inexpensive when used to produce monolithically integrated solar panel modules. Specifically, we have developed an aqueous chemical approach based on chemical bath deposition (CBD) with a subsequent sulfurization heat treatment. Samples produced by our method were analyzed by scanning electron microscopy, X-ray diffraction, transmission electron microscopy, absorbance and photoluminescence. The results show that this inexpensive and relatively benign process produces thin films of CZTS exhibiting uniform composition, kesterite crystal structure, and good optical properties. A preliminary solar cell device was fabricated to demonstrate rectifying and photovoltaic behavior.

• 한국재료학회지
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• 제24권12호
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• pp.715-719
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• 2014

(PDDA/$SiO_2$) thin films that consisted of positively charged poly (diallyldimethylammonium chloride) (PDDA) and negatively charged $SiO_2$ nanoparticles were fabricated on a glass substrate by an applying voltage layer-by-layer (LBL) self-assembly method. In this study, the microstructure and optical properties of the (PDDA/$SiO_2$) thin films coated on glass substrate were measured as a function of the applied voltage on the Pt electrodes. When 1.0 V was applied to a Pt electrode in a PDDA and $SiO_2$ solution, the thickness of the $(PDDA/SiO_2)_{10}$ thin film increased from 79 nm to 166 nm. The surface roughness also increased from 15.21 nm to 33.25 nm because the adsorption volume of the oppositely charged PDDA and $SiO_2$ solution increased. Especially, when the voltage was applied to the Pt electrode in the $SiO_2$ solution, the thickness increase of the (PDDA/$SiO_2$) thin film was larger than that obtained when using the PDDA solution. The refractive index of the fabricated (PDDA/$SiO_2$) thin film was ca. n = 1.31~1.32. The transmittance of the glass substrate coated by (PDDA/$SiO_2$)6 thin film with a thickness of 106 nm increased from ca. 91.37 to 95.74% in the visible range.

• 한국정보통신학회논문지
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• 제20권1호
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• pp.161-166
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• 2016

본 논문에서는 광섬유 브래그 격자의 공정조건 변화에 따른 $Co^{60}$ 감마방사선 영향을 연구하였다. 광섬유 브래그 격자는 붕소가 첨가된 광민감 광섬유를 이용하여 UV KrF 레이저 세기를 달리하여 제작하였으며, 제작된 광섬유 브래그 격자 센서에 총 선량 33.8 kGy 감마선을 조사하였다. 실험결과를 통하여, 격자 공정을 위한 UV 레이저 세기가 광섬유 브래그 격자의 방사선 민감도에 큰 영향을 줄 수 있다는 것을 확인하였으며, 레이저 공정조건 변화에 따른 방사선에 의한 광섬유 브래그 파장의 변화는 30 % 이상의 차이를 보였다.