• Title/Summary/Keyword: Optical Characteristics

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Characteristics of Semiconductor Laser Using Optical Injection Locking Scheme

  • Kim, Jung-Tae
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2004.05a
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    • pp.66-69
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    • 2004
  • We have investigated the spectral characteristics of semiconductor lasers locked to the external light injected from a modulated laser. The numerical model for semiconductor lasers under the external optical injection is based on the Lang's equation and has been extended in order to take into account the simultaneous injection of the multiple sidebands of the current-modulated laser. In this paper, we have analyzed characteristics of semiconductor laser using optical injection locking

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Dynamics of All-Optical Switching in Bacteriorhodopsin and its Application to Optical Computing

  • Singh, C.P.;Roy, Sukhdev
    • Journal of Photoscience
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    • v.9 no.2
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    • pp.317-319
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    • 2002
  • All-optical switching has been demonstrated in bacteriorhodopsin (bR) based on nonlinear intensity induced excited state absorption. The transmission of a cw probe laser beam at 410 nm corresponding to the peak absorption of M state through a bR film is switched by a pulsed pump laser beam at 570 nm that corresponds to the maximum initial 8 state absorption. The switching characteristics have been analyzed using the rate equation approach considering all the six intermediate states (B, K, L, M, N and 0) in the bR photocycle. The switching characteristics are shown to be sensitive to life time of the M state, absorption cross-section of the 8 state at probe wavelength ($\sigma$ $\_$Bp/) and peak pump intensity. It has been shown that the probe laser beam can be completely switched off (100 % modulation) by the pump laser beam at relatively low pump powers, for $\sigma$$\_$Bp/ = O. The switching characteristics have been used to design all-optical NOT, OR, AND and the universal NOR and NAND logic gates for optical computing with two pulsed pump laser beams.

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SNR Analysis for Practical Electro-Optical Camera System

  • Kim Youngsun;Kong Jong-Pil;Heo Haeng-Pal;Park Jong-Euk;Chang Young-Jun
    • Proceedings of the KSRS Conference
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    • 2005.10a
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    • pp.633-636
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    • 2005
  • An electro-optical camera system consists of many subsystems such as the optics, the detector, and the electronics and so on. They may create variations in the processed image that were not present original scene. The performance analysis of the electro-optical camera system is a mathematical construct that provides an optimum design through appropriate trade off analysis. The SNR(Signal to Noise Ratio) is one of the most important performance for the electro-optical camera system. The SNR analysis shown in this paper is performed based on the practical high resolution satellite camera design. For the purpose of the practical camera design, the analysis assumes that the defined radiance, which is calculated for the Korean peninsula, reached directly to the telescope entrance. In addition, the actual operation concept such as integration time and the normal operation altitude is assumed. This paper compares the SNR analysis results according to the various camera characteristics such as the optics, the detector, and the camera electronics. In detail, the optical characteristics can be split into the focal length, F#, transmittance, and so on. And the system responsivity, the quantum efficiency, the TDI stages, the quantization noise and the analogue noise can be used for the detector and the camera electronics characteristics. Finally this paper suggests the optimum design to apply the practical electro-optical system.

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Optical Characteristics of Nanocone-patterned c-Si Wafers Coated with Dielectric Thin Films (유전박막이 도포된 나노원뿔 패턴된 단결정 Si 기판의 광특성)

  • Kim, Eunah;Park, Jimin;Ko, Eun-Ji;Kim, Dong-Wook
    • Current Photovoltaic Research
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    • v.5 no.2
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    • pp.55-58
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    • 2017
  • We investigated the influences of dielectric thin film coating on the optical characteristics of c-Si wafers with nanocone (NC) arrays using finite-difference time-domain (FDTD) simulations. Dielectric thin films on high-refractive-index surface can lower optical reflection and reflection dips appear at the wavelengths where destructive interference occurs. The optical reflection of the NC arrays was lower than that of the dielectric-coated planar wafer in broad wavelength range. Remarkable antireflection effects of the NC array could be attributed to beneficial roles of the NCs, including the graded refractive index, multiple reflection, diffraction, and Mie resonance. Dielectric thin films modified the optical reflection spectra of the NC arrays, which could not be explained by the interference alone. The optical properties of the dielectric-coated NC arrays were determined by the inherent optical characteristics of the NC arrays.

A Study on the Current Sensor Using an Optical Modulator with BSO (BSO와 ZnSe를 광 변조기로 이용한 전류센서에 관한 연구)

  • 김요희;이대영
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.28A no.9
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    • pp.721-728
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    • 1991
  • In this paper, a magneto-optic modulator has been designed by using single crystal BSO and polycrystal ZnSe as Faraday cells. And practical core-type optical current sensors using pure iron and permalloy have been prepared and experimented. In order to obtain efficient magnetic field detection, LED(NEC OD08358, 0.87 $\mu$m) was used as optical source, PIN-PD(OD-8454)as optical receiver and multi-mode optical fiber (100/140$\mu$m) as transmission line. The characteristics matrix of the optical element was calculated by Stokes parameter, and optic modulation characteristics equations were derived by Muller matrix. Electromagnetic analysis program (FLUX 2D, micro VAX 3600) by finite element method was used to find the magnetic flux density around the core. The measuring error of the output voltage to input current has been masured below 5% in the range of 50A to 1000A. As the temperature was changed from -20$^{\circ}C$ to 60$^{\circ}C$, the maximum measurement error of the optical output has been found to be 0.5% at 60$^{\circ}C$. These experimental results show good temperature and linearity characteristics. The SNR of the overall system was 47dB in case of 600A (250.2 Oe) conductor current and the system has good noise immunity.

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A Study on the Parameter Analysis for High Precision Optical Current Sensor Implementation (고정도 광 전류센서 구현을 위한 파라미터 분석 연구)

  • Kim, Young-Soo;Lim, Young-Hoon;Hyun, Duck-Hwa
    • Proceedings of the KIEE Conference
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    • 2001.11a
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    • pp.265-267
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    • 2001
  • In this paper, some optical parameters which have effects on the measuring precision and sensitivity of optical current sensor are analyzed. Each parameter occurs changes of specific characteristics of optical sensor system. The influences of performance and characteristics variation of optical current sensor are described in accordance with the changes of optical output power, optical bias point which is called phase difference, and a specific constant related to sensor material and wavelength of light source.

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A Study on the Optical Device Alignment Characteristics Improvement using Multi-Axis Ultra Precision Stage (극초정밀 다축 스테이지를 이용한 광소자 정렬 특성 향상에 관한 연구)

  • Jeong, Sang-Hwa;Cha, Kyoung-Rae;Kim, Gwang-Ho
    • Journal of the Korean Society for Precision Engineering
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    • v.22 no.12 s.177
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    • pp.175-183
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    • 2005
  • In recent years, as the demands of VBNS and VDSL increase, the development of kernel parts of optical communication such as PLC(Planar Light Circuit), Coupler, and WDM elements increases. The alignment and the attachment technology are very important in the fabrication of optical elements. In this Paper, the optical alignment characteristic of multi-axis ultra precision stage is studied. The alignment algorithms are studied for applying to the ultra precision multi-axis stage. The alignment algorithm is comprised of field search and peak search algorithms. The contour of optical power signals can be obtained by field search and the precise coordinate can be found out by peak search. Three kinds of alignments, such as 1 ch. input vs. 1 ch. output optical stack, 1 ch. input vs. 8 ch. output PLC stacks, and ferrule vs. ferrule, are performed for investigating the alignment characteristics.

A Study on Optical Losses for Tubular LED Lamp's Components (직관형 LED램프의 구성부품별 광손실에 관한 연구)

  • Jeong, Hee-Suk;Park, Chang-Kyu
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.25 no.7
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    • pp.1-8
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    • 2011
  • The high efficiency tubular LED lamp has been developed. But, it occurs optical losses in consists of LED package, module, diffuser etc.. By Measuring the tubular LED lamp's luminous flux, we compared and analyzed about the effect of optical losses for each component and actually using measured luminous intensity distribution data, illuminance distribution was simulated by Relux. Optical losses are 24[%] from LED package to luminaire and the tubular LED lamp can be replaced with fluorescent lamp. In this paper, we could provide data for optimum lighting design by analyzing the optical characteristics for developing and propagating the tubular LED lamp.

Optical characteristics of Se thin film fabricated by EBE method (전자빔 증착법으로 제작한 Se박막의 광학적 특성)

  • 정해덕;이기식
    • Electrical & Electronic Materials
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    • v.9 no.5
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    • pp.445-449
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    • 1996
  • Structural and optical characteristics in Se thin film fabricated by EBE method had been studied. Se thin film was deposited with noncrystalline until substrate temperature of >$100^{\circ}C$ Color of its surface had red genealogy, and its optical energy band gap was about 2.45 eV. But Se film was grown with monoclinic at substrate temperature of over >$150^{\circ}C$ Also, color of its surface had gray genealogy, and its optical energy band gap was about 2.31 eV. Finally, after heat-treatment at >$150^{\circ}C$ for 15 min with substrate temperature of >$100^{\circ}C$ noncrystalline Se was proved to be hexagonal, and color of its surface had dark gray genealogy, and its optical energy band gap was about 2.06 eV. From the results, it was known that Se thin film for photoelectric device with the lowest optical energy band gap was accepted from hexagonal structure.

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Transparent ZnO based thin film transistors fabricated at room temperature with high-k dielectric $Gd_2O_3$ gate insulators

  • Tsai, Jung-Ruey;Li, Chi-Shiau;Tsai, Shang-Yu;Chen, Jyun-Ning;Chien, Po-Hsiu;Feng, Wen-Sheng;Liu, Kou-Chen
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.374-377
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    • 2009
  • The characteristics of the deposited thin films of the zinc oxide (ZnO) at different oxygen pressures will be elucidated in this work. The resistivity of ZnO thin films were dominated by the carrier concentration under high oxygen pressure conditions while controlled by the carrier mobility at low oxygen ambiences. In addition, we will show the characteristics of the transparent ZnO based thin film transistor (TFT) fabricated at a full room temperature process with gate dielectric of gadolinium oxide ($Gd_2O_3$) thin films.

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