• Title/Summary/Keyword: Operational amplifier

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Design and Fabrication of CMOS Micro Humidity Sensor System (CMOS 마이크로 습도센서 시스템의 설계 및 제작)

  • Lee, Ji-Gong;Lee, Sang-Hoon;Lee, Sung-Pil
    • Journal of the Institute of Convergence Signal Processing
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    • v.9 no.2
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    • pp.146-153
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    • 2008
  • Integrated humidity sensor system with two stages operational amplifier has been designed and fabricated by $0.8{\mu}m$ analog mixed CMOS technology. The system (28 pin and $2mm{\times}4mm$) consisted of Wheatstone-bridge type humidity sensor, resistive type humidity sensor, temperature sensors and operational amplifier for signal amplification and process in one chip. The poly-nitride etch stop process has been tried to form the sensing area as well as trench in a standard CMOS process. This modified technique did not affect the CMOS devices in their essential characteristics and gave an allowance to fabricate the system on same chip by standard process. The operational amplifier showed the stable operation so that unity gain bandwidth was more than 5.46 MHz and slew rate was more than 10 V/uS, respectively. The drain current of n-channel humidity sensitive field effect transistor (HUSFET) increased from 0.54 mA to 0.68 mA as the relative humidity increased from 10 to 70 %RH.

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A Study on the Improved of the Harmonic Distortion of the Operational Amplifier (연산증폭기의 고조파 왜곡 개선에 관한 연구)

  • 정종혁;양규직
    • Journal of the Korean Institute of Navigation
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    • v.20 no.3
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    • pp.117-126
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    • 1996
  • Generally, the distortion of the negative feedback amplifier is reduced by a factor equal to the return difference (1+${\beta}_1A_1$), but the proposed feedforward amplifier is reduced by a factor equal to the square of the return difference (1+${\beta}_1A_1$). In this paper, a feedforward amplifier with error correction is designed and implemented. So as to evaluate the characteristics of the harmonic distortion that the inverting feedforward amplifier is compared with that of the reference amplifier without feedforward error correction. It is confirmed that the proposed method should be able to reduce much greater than compared with a conventional negative feedback amplifier. Therefore it should be noted that the proposed feedforward amplifier network is also acceptable for wide-band amplifiers and the network which is demanded to improve the harmonic distortion.

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Low-Voltage CMOS Current Feedback Operational Amplifier and Its Application

  • Mahmoud, Soliman A.;Madian, Ahmed H.;Soliman, Ahmed M.
    • ETRI Journal
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    • v.29 no.2
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    • pp.212-218
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    • 2007
  • A novel low-voltage CMOS current feedback operational amplifier (CFOA) is presented. This realization nearly allows rail-to-rail input/output operations. Also, it provides high driving current capabilities. The CFOA operates at supply voltages of ${\pm}0.75V$ with a total standby current of 304 ${\mu}A$. The circuit exhibits a bandwidth better than 120 MHz and a current drive capability of ${\pm}1$ mA. An application of the CFOA to realize a new all-pass filter is given. PSpice simulation results using 0.25 ${\mu}m$ CMOS technology parameters for the proposed CFOA and its application are given.

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Integrated Rail-to-Rail Low-Voltage Low-Power Enhanced DC-Gain Fully Differential Operational Transconductance Amplifier

  • Ferri, Giuseppe;Stornelli, Vincenzo;Celeste, Angelo
    • ETRI Journal
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    • v.29 no.6
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    • pp.785-793
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    • 2007
  • In this paper, we present an integrated rail-to-rail fully differential operational transconductance amplifier (OTA) working at low-supply voltages (1.5 V) with reduced power consumption and showing high DC gain. An embedded adaptive biasing circuit makes it possible to obtain low stand-by power dissipation (lower than 0.17 mW in the rail-to-rail version), while the high DC gain (over 78 dB) is ensured by positive feedback. The circuit, fabricated in a standard CMOS integrated technology (AMS 0.35 ${\mu}m$), presents a 37 V/${\mu}s$ slew-rate for a capacitive load of 15 pF. Experimental results and high values of two quality factors, or figures of merit, show the validity of the proposed OTA, when compared with other OTA configurations.

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A power-reduction technique and its application for a low-voltage CMOS operational amplifier (저전압용 CMOS 연산 증폭기를 위한 전력 최소화 기법 및 그 응용)

  • 장동영;이용미;이승훈
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.34C no.6
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    • pp.37-43
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    • 1997
  • In this paper, an analog-domain powr-reduction technique for a low-voltage CMOS operational amplifier and its application to clock-based VLSI systems are proposed. The proposed technique cuts off the bias current of the op amp during a half cycle of the clock in the sleeping mode and resumes the curent supply sequentially during the remaining cycle of the clock in the normal operating mode. The proposed sequential sbiasing technique reduces about 50% of the op amp power and improves the circuit performance through high phase margin and stable settling behavior of the output voltage. The power-reduction technique is applied to a sample-and-hold amplifier which is one of the critical circuit blocks used in the front-end stage of analog and/or digital integrated systems. The SHA was simulated and analyzed in a 0.8.mu.m n-well double-poly double-metal CMOS technology.

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Sensor signal processing device for USN application and general purpose (USN응용과 범용목적에 적용가능한 센서 신호처리기)

  • Park, Chan-Won;Kim, Il-Hwan;Chun, Sam-Sug
    • Journal of Sensor Science and Technology
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    • v.19 no.3
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    • pp.230-237
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    • 2010
  • In sensor signal conditioning and processing, offset and drift characteristics of an operational amplifier are an important factor when the amplifier is used for a precise sensor signal amplifier. In order to use it in high accuracy, an expensive trimming or a complex compensation circuit is required. This paper presents the improved sensor signal conditioning and processing device for ubiquitous sensor network(USN) application or general purpose by developing a hardware of the circuit for reducing the offset voltage and drift characteristics, and a software for its control and sensor signal processing. We realize better offset voltage and drift characteristics of the signal conditioning circuit using low cost operational amplifiers. The experimental results show that this technique is effective in improving the performance of the sensor signal processing device.

A Simple Bridge Resistance Deviation-to-Frequency Converter for Intelligent Resistive Transducers (지능형 저항성 변환기를 위한 간단한 브리지 저항 편차-주파수 변환기)

  • Lee, Po;Chung, Won-Sup;Son, Sang-Hee
    • Journal of IKEEE
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    • v.12 no.3
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    • pp.167-171
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    • 2008
  • A bridge resistance deviation-to-frequency (BRD-to-F) converter is presented for interfacing resistive sensor bridges. It consists of a linear operational transconductance amplifier (LOTA), a current-controlled oscillator (CCO). The prototype converter was simulated using commercially available discrete components. The result shows that the converter has a conversion sensitivity amounting to 16.90 kHz/${\Omega}$ and a linearity error less than ${\pm}$0.03 %.

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5.2 mW 61 dB SNDR 15 MHz Bandwidth CT ΔΣ Modulator Using Single Operational Amplifier and Single Feedback DAC

  • Cho, Young-Kyun;Park, Bong Hyuk;Kim, Choul-Young
    • ETRI Journal
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    • v.38 no.2
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    • pp.217-226
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    • 2016
  • We propose an architecture that reduces the power consumption and active area of such a modulator through a reduction in the number of active components and a simplification of the topology. The proposed architecture reduces the power consumption and active area by reducing the number of active components and simplifying the modulator topology. A novel second-order loop filter that uses a single operational amplifier resonator reduces the number of active elements and enhances the controllability of the transfer function. A trapezoidal-shape half-delayed return-to-zero feedback DAC eliminates the loop-delay compensation circuitry and improves pulse-delay sensitivity. These simple features of the modulator allow higher frequency operation and more design flexibility. Implemented in a 130 nm CMOS technology, the prototype modulator occupies an active area of $0.098mm^2$ and consumes 5.23 mW power from a 1.2 V supply. It achieves a dynamic range of 62 dB and a peak SNDR of 60.95 dB over a 15 MHz signal bandwidth with a sampling frequency of 780 MHz. The figure-of-merit of the modulator is 191 fJ/conversion-step.

Macro Model of DWFG MOSFET for Analog Application and Design of Operational Amplifier (아날로그 응용을 위한 DWFG MOSFET의 매크로 모델 및 연산증폭기 설계)

  • Ha, Ji-Hoon;Baek, Ki-Ju;Lee, Dae-Hwan;Na, Kee-Yeol;Kim, Yeong-Seuk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.8
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    • pp.582-586
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    • 2013
  • In this paper, a simple macro model of n-channel MOSFET with dual workfunction gate (DWFG) structure is proposed. The DWFG MOSFET has higher transconductance and lower drain conductance than conventional MOSFET. Thus analog circuit design using the DWFG MOSFET can improve circuit characteristics. Currently, device models of the DWFG MOSFET are insufficient, so simple series connected two MOSFET model is proposed. In addition, a two stage operational amplifier using the proposed DWFG MOSFET macro model is designed to verify the model.

Field programmable analog arrays for implementation of generalized nth-order operational transconductance amplifier-C elliptic filters

  • Diab, Maha S.;Mahmoud, Soliman A.
    • ETRI Journal
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    • v.42 no.4
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    • pp.534-548
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    • 2020
  • This study presents a new architecture for a field programmable analog array (FPAA) for use in low-frequency applications, and a generalized circuit realization method for the implementation of nth-order elliptic filters. The proposed designs of both the FPAA and elliptic filters are based on the operational transconductance amplifier (OTA) used in implementing OTA-C filters for biopotential signal processing. The proposed FPAA architecture has a flexible, expandable structure with direct connections between configurable analog blocks (CABs) that eliminates the use of switches. The generalized elliptic filter circuit realization provides a simplified, direct synthetic method for an OTA-C symmetric balanced structure for even/odd-nth-order low-pass filters (LPFs) and notch filters with minimum number of components, using grounded capacitors. The filters are mapped on the FPAA, and both architectures are validated with simulations in LTspice using 90-nm complementary metal-oxide semiconductor (CMOS) technology. Both proposed FPAA and filters generalized synthetic method achieve simple, flexible, low-power designs for implementation of biopotential signal processing systems.