• Title/Summary/Keyword: Op-amp sharing

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A 145μW, 87dB SNR, Low Power 3rd order Sigma-Delta Modulator with Op-amp Sharing (연산증폭기 공유 기법을 이용한 145μW, 87dB SNR을 갖는 저전력 3차 Sigma-Delta 변조기)

  • Kim, Jae-Bung;Kim, Ha-Chul;Cho, Seong-Ik
    • Journal of IKEEE
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    • v.19 no.1
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    • pp.87-93
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    • 2015
  • In this paper, a $145{\mu}W$, 87dB SNR, Low power 3rd order Sigma-Delta Modulator with Op-amp sharing is proposed. Conventional architecture with analog path and digital path is improved by adding a delayed feed -forward path for disadvantages that coefficient value of the first integrator is small. Proposed architecture has a larger coefficient value of the first integrator to remove the digital path. Power consumption of proposed architecture using op-amp sharing is lower than conventional architecture. Simulation results for the proposed SDM designed in $0.18{\mu}m$ CMOS technology with power supply voltage 1.8V, signal bandwidth 20KHz and sampling frequency 2.8224MHz shows SNR(Signal to Noise Ratio) of 87dB, the power consumption of $145{\mu}W$.

Design of Low-Power TFT-LCD Source Driver

  • Sung, Yoo-Chang;Choi, Byong-Deok;Kwon, Oh-Kyong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.17-18
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    • 2000
  • A low-power source driver for TFT-LCDs has been proposed using the triple charge sharing method that enhances the AC power saving efficiency of the prior charge sharing method. The AC power saving efficiency of the proposed source driver reaches 66.6%. In addition, a novel OP-AMP with low-quiescent current has been developed. The measured quiescent current of the OP-AMP is $5{\mu}A{\sim}7{\mu}A$ at VDD=5V and VSS=0V with load resistance of $2k{\Omega}$ and load capacitance of 300pF.

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New Charge Pump for Reducing the Current Mismatch (전류 부정합을 줄인 새로운 전하 펌프)

  • Lee, Jae-Hwan;Jeong, Hang-Geun
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.469-471
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    • 2008
  • The charge pump affects the performance of PLL. In designing the charge pump, we need to consider various issues such as current mismatch, charge sharing, feedthrough, charge injection, and leakage current. This paper propose the new charge pump circuit which is improved in terms of the current match over the existing high-speed charge pump. The simple method used for reducing current mismatch is the technique that uses a cascode in order to increase the output resistance of the charge pump. However the method limits the output voltage range of the charge pump. So the method is hard to apply as the supply voltage is lowered. Thus this paper proposes a new charge pump circuit using an op amp instead of the cascode. And the new charge pump circuit has an excellent current matching characteristics over a wide output range.

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A 10b 50MS/s Low-Power Skinny-Type 0.13um CMOS ADC for CIS Applications (CIS 응용을 위해 제한된 폭을 가지는 10비트 50MS/s 저 전력 0.13um CMOS ADC)

  • Song, Jung-Eun;Hwang, Dong-Hyun;Hwang, Won-Seok;Kim, Kwang-Soo;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.5
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    • pp.25-33
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    • 2011
  • This work proposes a skinny-type 10b 50MS/s 0.13um CMOS three-step pipeline ADC for CIS applications. Analog circuits for CIS applications commonly employ a high supply voltage to acquire a sufficiently acceptable dynamic range, while digital circuits use a low supply voltage to minimize power consumption. The proposed ADC converts analog signals in a wide-swing range to low voltage-based digital data using both of the two supply voltages. An op-amp sharing technique employed in residue amplifiers properly controls currents depending on the amplification mode of each pipeline stage, optimizes the performance of op-amps, and improves the power efficiency. In three FLASH ADCs, the number of input stages are reduced in half by the interpolation technique while each comparator consists of only a latch with low kick-back noise based on pull-down switches to separate the input nodes and output nodes. Reference circuits achieve a required settling time only with on-chip low-power drivers and digital correction logic has two kinds of level shifter depending on signal-voltage levels to be processed. The prototype ADC in a 0.13um CMOS to support 0.35um thick-gate-oxide transistors demonstrates the measured DNL and INL within 0.42LSB and 1.19LSB, respectively. The ADC shows a maximum SNDR of 55.4dB and a maximum SFDR of 68.7dB at 50MS/s, respectively. The ADC with an active die area of 0.53$mm^2$ consumes 15.6mW at 50MS/s with an analog voltage of 2.0V and two digital voltages of 2.8V ($=D_H$) and 1.2V ($=D_L$).