• Title/Summary/Keyword: OneNAND flash memory

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Low Cost Endurance Test-pattern Generation for Multi-level Cell Flash Memory

  • Cha, Jaewon;Cho, Keewon;Yu, Seunggeon;Kang, Sungho
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.1
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    • pp.147-155
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    • 2017
  • A new endurance test-pattern generation on NAND-flash memory is proposed to improve test cost. We mainly focus on the correlation between the data-pattern and the device error-rate during endurance testing. The novelty is the development of testing method using quasi-random pattern based on device architectures in order to increase the test efficiency during time-consuming endurance testing. It has been proven by the experiments using the commercial 32 nm NAND flash-memory. Using the proposed method, the error-rate increases up to 18.6% compared to that of the conventional method which uses pseudo-random pattern. Endurance testing time using the proposed quasi-random pattern is faster than that of using the conventional pseudo-random pattern since it is possible to reach the target error rate quickly using the proposed one. Accordingly, the proposed method provides more low-cost testing solutions compared to the previous pseudo-random testing patterns.

A Secure Deletion Method for NAND Flash File System (NAND 플래시 파일 시스템을 위한 안전 삭제 기법)

  • Lee, Jae-Heung;Oh, Jin-Ha;Kim, Seok-Hyun;Yi, Sang-Ho;Heo, Jun-Young;Cho, Yoo-Kun;Hong, Ji-Man
    • Journal of KIISE:Computing Practices and Letters
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    • v.14 no.3
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    • pp.251-255
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    • 2008
  • In most file systems, if a file is deleted, only the metadata of the file is deleted or modified and the file's data is still stored on the physical media. Some users require that deleted files no longer be accessible. This requirement is more important in embedded systems that employ flash memory as a storage medium. In this paper, we propose a secure deletion method for NAND flash file system and apply the method to YAFFS. Our method uses encryption to delete files and forces all keys of a specific file to be stored in the same block. Therefore, only one erase operation is required to securely delete a file. Our simulation results show that the amortized number of block erases is smaller than the simple encryption method. Even though we apply our method only to the YAFFS, our method can be easily applied to other NAND flash file systems.

A Study on Write Cache Policy using a Flash Memory (플래시 메모리를 사용한 쓰기 캐시 정책 연구)

  • Kim, Young-Jin;Anggorosesar, Aldhino;Lee, Jeong-Bae;Rim, Kee-Wook
    • Proceedings of the Korea Information Processing Society Conference
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    • 2009.11a
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    • pp.77-78
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    • 2009
  • In this paper, we study a pattern-aware write cache policy using a NAND flash memory in disk-based mobile storage systems. Our work is designed to face a mix of a number of sequential accesses and fewer non-sequential ones in mobile storage systems by redirecting the latter to a NAND flash memory and the former to a disk. Experimental results show that our policy improves the overall I/O performance by reducing the overhead significantly from a non-volatile cache over a traditional one.

Nanoscale NAND SONOS memory devices including a Seperated double-gate FinFET structure

  • Kim, Hyun-Joo;Kim, Kyeong-Rok;Kwack, Kae-Dal
    • Journal of Applied Reliability
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    • v.10 no.1
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    • pp.65-71
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    • 2010
  • NAND-type SONOS with a separated double-gate FinFET structure (SDF-Fin SONOS) flash memory devices are proposed to reduce the unit cell size of the memory device and increase the memory density in comparison with conventional non volatile memory devices. The proposed memory device consists of a pair of control gates separated along the direction of the Fin width. There are two unique alternative technologies in this study. One is a channel doping method and the other is an oxide thickness variation method, which are used to operate the SDF-Fin SONOS memory device as two-bit. The fabrication processes and the device characteristics are simulated by using technology comuter-adided(TCAD). The simulation results indicate that the charge trap probability depends on the different channel doping concentration and the tunneling oxide thickness. The proposed SDG-Fin SONOS memory devices hold promise for potential application.

Characterizing the Tail Distribution of Android IO Workload (안드로이드 입출력 부하의 꼬리분포 특성분석)

  • Park, Changhyun;Won, Youjip;Park, Yongjun
    • KIPS Transactions on Computer and Communication Systems
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    • v.8 no.10
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    • pp.245-250
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    • 2019
  • The use of NAND flash memory has increased rapidly due to the development of mobile fields. However, NAND flash memory has a limited lifespan, so studies are underway to predict its lifespan. Workload is one of the factors that significantly affect the life of NAND flash memory, and workload analysis studies in mobile environments are insufficient. In this paper, we analyze the distribution of workload in the mobile environment by collecting traces generated by using Android-based smartphones. The collected traces can be divided into three groups of hotness. Also they are distributed in the form of heavy tails. We fit this to the Pareto, Lognormal, and Weibull distributions, and Traces are closest to the Pareto distribution.

AS B-tree: A study on the enhancement of the insertion performance of B-tree on SSD (AS B-트리: SSD를 사용한 B-트리에서 삽입 성능 향상에 관한 연구)

  • Kim, Sung-Ho;Roh, Hong-Chan;Lee, Dae-Wook;Park, Sang-Hyun
    • The KIPS Transactions:PartD
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    • v.18D no.3
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    • pp.157-168
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    • 2011
  • Recently flash memory has been being utilized as a main storage device in mobile devices, and flashSSDs are getting popularity as a major storage device in laptop and desktop computers, and even in enterprise-level server machines. Unlike HDDs, on flash memory, the overwrite operation is not able to be performed unless it is preceded by the erase operation to the same block. To address this, FTL(Flash memory Translation Layer) is employed on flash memory. Even though the modified data block is overwritten to the same logical address, FTL writes the updated data block to the different physical address from the previous one, mapping the logical address to the new physical address. This enables flash memory to avoid the high block-erase cost. A flashSSD has an array of NAND flash memory packages so it can access one or more flash memory packages in parallel at once. To take advantage of the internal parallelism of flashSSDs, it is beneficial for DBMSs to request I/O operations on sequential logical addresses. However, the B-tree structure, which is a representative index scheme of current relational DBMSs, produces excessive I/O operations in random order when its node structures are updated. Therefore, the original b-tree is not favorable to SSD. In this paper, we propose AS(Always Sequential) B-tree that writes the updated node contiguously to the previously written node in the logical address for every update operation. In the experiments, AS B-tree enhanced 21% of B-tree's insertion performance.

Optimizing Garbage Collection Overhead of Host-level Flash Translation Layer for Journaling Filesystems

  • Son, Sehee;Ahn, Sungyong
    • International Journal of Internet, Broadcasting and Communication
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    • v.13 no.2
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    • pp.27-35
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    • 2021
  • NAND flash memory-based SSD needs an internal software, Flash Translation Layer(FTL) to provide traditional block device interface to the host because of its physical constraints, such as erase-before-write and large erase block. However, because useful host-side information cannot be delivered to FTL through the narrow block device interface, SSDs suffer from a variety of problems such as increasing garbage collection overhead, large tail-latency, and unpredictable I/O latency. Otherwise, the new type of SSD, open-channel SSD exposes the internal structure of SSD to the host so that underlying NAND flash memory can be managed directly by the host-level FTL. Especially, I/O data classification by using host-side information can achieve the reduction of garbage collection overhead. In this paper, we propose a new scheme to reduce garbage collection overhead of open-channel SSD by separating the journal from other file data for the journaling filesystem. Because journal has different lifespan with other file data, the Write Amplification Factor (WAF) caused by garbage collection can be reduced. The proposed scheme is implemented by modifying the host-level FTL of Linux and evaluated with both Fio and Filebench. According to the experiment results, the proposed scheme improves I/O performance by 46%~50% while reducing the WAF of open-channel SSDs by more than 33% compared to the previous one.

Index management technique using Small block in storage device based on NAND flash memory

  • Lee, Seung-Woo;Oh, Se-Jin
    • Journal of the Korea Society of Computer and Information
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    • v.25 no.10
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    • pp.1-14
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    • 2020
  • In this paper, we propose to solve the problem of increasing system memory usage due to an increase in the number of mapping information management when using a NAND flash memory-based storage device in an existing sector-based file system. The proposed technique is to store only mapping information in page units based on index blocks and manage them in block units. To this end, the proposed technique uses a sequential offset for storing and managing a plurality of mapping information in one page in a small block, and a reverse offset for a spare page corresponding to a change in mapping information in the block. Through this, the proposed technique has the advantage that the number of block-unit deletions is less than that of the existing technique, and the system memory usage required for mapping information management is low. Reduced by about 32%.

A Study on Characteristics and Techniques that Affect Data Integrity for Digital Forensic on Flash Memory-Based Storage Devices (플래시 메모리 기반 저장장치에서 디지털 포렌식을 위한 데이터 무결성에 영향을 주는 특성 및 기술 연구)

  • Hyun-Seob Lee
    • Journal of Internet of Things and Convergence
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    • v.9 no.3
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    • pp.7-12
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    • 2023
  • One of the most important characteristics of digital forensics is integrity. Integrity means that the data has not been tampered with. If evidence is collected during digital forensic and later tampered with, it cannot be used as evidence. With analog evidence, it's easy to see if it's been tampered with, for example, by taking a picture of it. However, the data on the storage media, or digital evidence, is invisible, so it is difficult to tell if it has been tampered with. Therefore, hash values are used to prove that the evidence data has not been tampered with during the process of collecting evidence and submitting it to the court. The hash value is collected from the stored data during the evidence collection phase. However, due to the internal behavior of NAND flash memory, the physical data shape may change over time from the acquisition phase. In this paper, we study the characteristics and techniques of flash memory that can cause the physical shape of flash memory to change even if no intentional data corruption is attempted.

Parallel BCH Encoding/decoding Method and VLSI Design for Nonvolatile Memory (비휘발성 메모리를 위한 병렬 BCH 인코딩/디코딩 방법 및 VLSI 설계)

  • Lee, Sang-Hyuk;Baek, Kwang-Hyun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.5
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    • pp.41-47
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    • 2010
  • This paper has proposed parallel BCH, one of error correction coding methods which has been used to NAND flash memory for SSD(solid state disk). To alter error correction capability, the proposed design improved reliability on data block has higher error rate as used frequency increasingly. Decoding parallel process bit width is as two times as encoding parallel process bit width, that could reduce decoding processing time, accordingly resulting in one half reduction over conventional ECC.