• Journal of the Institute of Electronics Engineers of Korea CI
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• v.42 no.5
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• pp.31-40
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• 2005

In this study, we study measurement of wafer processing throughput and sequence simulation of single wafer type for wafer cleaning equipments that were used for etching, cleaning and polishing of wafer. Based on finite state machine, simulation model was built with identification of robot's status according to scheduling algorithm. Moreover, through performance of simulation as above, throughput per hour of cleaning equipment was measured. By the simulation method that are proposed in this paper, we could measure the wafer throughput per hour according to recipe and robot motion speed, and find optimal recipe and moving sequence of robot that maximize the throughput.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.5 no.2
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• pp.130-140
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• 1993

Average particle deposition velocity toward a horizontal semiconductor wafer in vertical airflow is measured by a wafer surface scanner(PMS SAS-3600). Use of wafer surface scanner requires very short exposure time normally ranging from 10 to 30 minutes, and hence makes repetition of experiment much easier. Polystyrene latex (PSL) spheres of diameter between 0.2 and $1.0{\mu}m$ are used. The present range of particle sizes is very important in controlling particle deposition on a wafer surface in industrial applications. For the present experiment, convection, diffusion, and sedimentation comprise important agents for deposition mechanisms. To investigate confidence interval of experimental data, mean and standard deviation of average deposition velocities are obtained from more than ten data set for each PSL sphere size. It is found that the distribution of mean of average deposition velocities from the measurement agrees well with the predictions of Liu and Ahn(1987) and Emi et al.(1989).

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1083-1086
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• 2005

Light scattering measurement system that can evaluate light scattering characteristic from defects on silicon wafer surface has been developed. The system uses $Ar^+$ laser as an illumination source, and a highly sensitive photomultiplier tube (PMT) for detecting scattered light from defects. Unlike with conventional measurement system, our system has ability to measure scattered light pattern from wide range of scattering angles with changeable incidence condition. It is shown that our developed system is effective to discriminate the types and sizes of defects from basic experimental results using a microscatch and a PSL sphere.

• Journal of the Semiconductor & Display Technology
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• v.20 no.1
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• pp.32-36
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• 2021

The number of processes in the manufacture of semiconductors, displays and solar cells is increasing. And as the processes is performed, multiple layers of films and various patterns are formed on the wafer. At this time, substrate warpage occurs due to the difference in stress between each film and pattern formed on the wafer. the substrate warping phenomenon occurs due to the difference in stress between each film and pattern formed on the wafer. We developed a new warpage measurement method to measure wafer warpage during real-time processing. We performed an experiment to measure the presence and degree of warpage of the substrate in real time during the process by adding only measurement equipment for applying additional electrical signals to the existing ESC and detecting the change of the additional electric signal. The additional electrical measurement signal applied at this time is very small compared to the direct current (DC) power applied to the electrostatic chuck whit a frequency that is not generally used in the process can be selectively used. It was confirmed that the measurement of substrate warpage can be easily separated from other power sources without affecting.

• Transactions of the Korean Society of Mechanical Engineers
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• v.18 no.1
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• pp.175-183
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• 1994

To investigate thermophoretic effect on particle deposition, average deposition velocity toward a horizontal wafer surface in vertical airflow is measured keeping the wafer surface temperature different from the surrounding air temperature. In the present measurement, the temperature difference is maintained in the range from -10 to $4^{\circ}$ C Polystyrene latex (PSL) spheres of diameter between 0.3 and 0.8 .mu.m are used for the experiment. The number of particles deposited on a wafer surface is estimated from the measurements using a wafer surface scanner (PMS SAS-3600). Experimental data are compared with prediction model results.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.53-58
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• 2012

A new on-wafer de-embedding method using thru, short and open patterns sequentially is proposed to eliminate the errors of conventional methods. This "thru-short-open" method is based on the removal of the coupling admittance between input and output interconnect dangling legs. The increase of the de-embedding effect of the lossy coupling capacitance on the cutoff frequency in MOSFETs is observed as the gate length is scaled down to 45 nm. This method will be very useful for accurate RF measurements of nano-scale MOSFETs.

• Journal of Institute of Control, Robotics and Systems
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• v.6 no.9
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• pp.831-835
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• 2000

The uniformity of themperature on a wafer is a wafer is one the most important parameters to conterol the RTF(Rapid Thermal Process) with proper input signals. It is impossible to achieve the uniformity of temperature without the exact estimation of temperature ar all points on the wafer. There fore, it is difficult to understand the internal dynamics as well as the structural complexities of the RTP, which is aprimary obstacle to measure the distributed temperatures on the wafer accurately. Furthermore, it is also hard to accomplish desirable estimation because only a few pyrometers are available in the general equipments. In the paper, a thermal model based on the chamber grometry of the AST SHS200 RTP system is developed to effectively control the thermal uniformity on the wafer. First of all, the estimation method of one-point measurement is developed, which is properly extended to the case of multi-point measurements. This thermal model is validated through simulation and experiments. The proposed work can be utilized to building a run-by -run or a real-time control of the RTP.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.8
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• pp.808-820
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• 2014

In this paper, we fabricated two on-wafer type DUT(Device-Under-Test)s; a 10-dB attenuator and an amplifier using commercially available MMIC and we proposed the measurement method of the noise parameters for the two fabricated DUTs. Since the 10-dB attenuator DUT is a passive device, its noise parameters can be accurately determined when its S-parameters are measured. In the case of the amplifier DUT, its noise parameters are available in the datasheet. Hence, the measured noise parameters using the proposed method can be assessed by comparing with the known noise parameters. The noise parameter measurement method having been presented by the authors requires the S-parameters of the 8-port network used in the measurement and limited to coaxial type DUTs. When on-wafer probes are included in the 8-port network, the 8-port S-parameters requires the measurements with different kinds of connectors. In this paper, we obtained the 8-port S-parameters using the Smart-Cal function in the network analyzer. The measured noise parameters shows about ${\pm}0.2dB$ fluctuations for $NF_{min}$. Other noise parameters with the frequency change show good agreement with the expected results.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.17 no.3
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• pp.53-58
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• 2008

This study was conducted to evaluate the flatness of the porous type of dicing chuck. Two measurement systems for a vacuum chuck with a porous type of ceramic plate were prepared using a digital indicator and a laser interferometer. 6 inch of silicon and glass wafer were also used. Vacuum pressure from 100mmHg to 700mmHg by 100mmHg was increased. From experiments, chucked-wafer flatness was converged to the dicing chuck flatness itself even though the repeatability of contact method using indicator was unstable. Finally, the chuck flatness was estimated below $2{\mu}m$ with peak-to valley value.

• Korean Journal of Materials Research
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• v.24 no.12
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• pp.682-688
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• 2014

Physical and chemical changes in a polished wafer and in $2.5{\mu}m$ & $4{\mu}m$ epitaxially grown Si layer wafers (Epilayer wafer) after surface treatment were investigated. We characterized the influence of surface treatment on wafer properties such as surface roughness and the chemical composition and bonds. After each surface treatment, the physical change of the wafer surface was evaluated by atomic force microscopy to confirm the surface morphology and roughness. In addition, chemical changes in the wafer surface were studied by X-ray photoemission spectroscopy measurement. Changes in the chemical composition were confirmed before and after the surface treatment. By combined analysis of the physical and chemical changes, we found that diluted hydrofluoric acid treatment is more effective than buffered oxide etching for $SiO_2$ removal in both polished and Epi-Layer wafers; however, the etch rate and the surface roughness in the given treatment are different among the polished $2.5{\mu}m$ and $4{\mu}m$ Epi-layer wafers in spite of the identical bulk structural properties of these wafers. This study therefore suggests that independent surface treatment optimization is required for each wafer type, $2.5{\mu}m$ and $4{\mu}m$, due to the meaningful differences in the initial surface chemical and physical properties.