The Journal of Korean Institute of Electromagnetic Engineering and Science (한국전자파학회논문지)

The Korean Institute of Electromagnetic Engineering and Science (한국전자파학회)
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Measurement of the Noise Parameters of On-Wafer Type DUTs Using 8-Port Network

8-포트회로망을 이용한 온-웨이퍼형 DUT의 잡음파라미터 측정

  • Lee, Dong-Hyun (Department of Radio Science and Engineering, Chungnam National University) ;
  • Ahmed, Abdule-Rahman (Department of Radio Science and Engineering, Chungnam National University) ;
  • Lee, Sung-Woo (Department of Radio Science and Engineering, Chungnam National University) ;
  • Yeom, Kyung-Whan (Department of Radio Science and Engineering, Chungnam National University)
  • Received : 2014.06.30
  • Accepted : 2014.08.13
  • Published : 2014.08.31
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Abstract

In this paper, we fabricated two on-wafer type DUT(Device-Under-Test)s; a 10-dB attenuator and an amplifier using commercially available MMIC and we proposed the measurement method of the noise parameters for the two fabricated DUTs. Since the 10-dB attenuator DUT is a passive device, its noise parameters can be accurately determined when its S-parameters are measured. In the case of the amplifier DUT, its noise parameters are available in the datasheet. Hence, the measured noise parameters using the proposed method can be assessed by comparing with the known noise parameters. The noise parameter measurement method having been presented by the authors requires the S-parameters of the 8-port network used in the measurement and limited to coaxial type DUTs. When on-wafer probes are included in the 8-port network, the 8-port S-parameters requires the measurements with different kinds of connectors. In this paper, we obtained the 8-port S-parameters using the Smart-Cal function in the network analyzer. The measured noise parameters shows about ${\pm}0.2dB$ fluctuations for $NF_{min}$. Other noise parameters with the frequency change show good agreement with the expected results.

본 논문에서는 10-dB 감쇠기 및 상용 패키지 된 MMIC 능동소자를 이용하여 구성된 증폭기, 2가지의 온-웨이퍼(on-wafer)형 DUT(Device-Under Test)를 구성하고, 이들의 잡음파라미터를 8-port 회로망을 이용하여 추출하는 방법을 제시하였다. 제작된 10-dB 감쇠기의 경우 수동소자이기 때문에, 이것의 S-파라미터를 측정하여 얻을 경우, 이것의 잡음파라미터를 알 수 있고, 또한 증폭기의 경우 이것의 잡음파라미터가 datasheet에 있다. 따라서 제안한 방법을 이용한 잡음파라미터 측정 결과에 대한 평가를 용이하게 할 수 있다. 기존 저자들에 의하여 발표된 6-포트회로망을 확장한 8-포트회로망을 이용한 잡음파라미터 측정은 사용된 8-포트회로망의 S-파라미터를 필요로 하는데, 동축형 DUT에 국한된다. 온-웨이퍼 프로브가 8-포트회로망에 삽입될 경우, 8-포트회로망의 S-파라미터 측정은 이종 형태의 커넥터를 갖는 8-포트회로망이 된다. 본 논문에서는 회로망 분석기(Network analyzer)의 Smart-cal 기능을 이용하여 8-포트회로망의 S-파라미터를 추출하였다. 측정된 잡음파라미터는 최소잡음지수, $NF_{min}$ 경우, 예상된 결과에 대하여 약 ${\pm}0.2dB$의 오차를 보인다. 다른 잡음파라미터는 주파수에 따라 예상된 결과와 근접하게 일치하는 결과를 보여주고 있다.

Keywords

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