• Proceedings of the Korean Society of Laser Processing Conference
• /
• 2003.05a
• /
• pp.56-59
• /
• 2003

• Journal of Institute of Convergence Technology
• /
• v.5 no.1
• /
• pp.13-17
• /
• 2015

In wafer level molding progress, the thermal releasing failure phenomenon is shown up as the important problem. This phenomenon can cause the problem including the warpage, crack of the molded wafer. The thermal releasing failure is due to the insufficiency of adhesion strength degradation of the molding tape. To solve this problem, we studied experimental method increasing the release property of the molding tape through the plasma surface treatment on the wafer substrate. In this research, the vacuum plasma treatment system is used for release property improvement of the molding tape and controls the operating condition of the hydrophilic($O_2$, 100kW, 10min) and hydrophobic($C_2F_6$, 200kW, 10min). In order to perform the peeling test for measuring the releasing force precisely, we remodel the micro scale material property evaluation system developed by Korea institute of industrial technology. In case of hydrophilic surface treatment on the wafer substrate, we can figure out the releasing property of molding tape increase. In order to grasp the effect that it reaches to the release property increase when repeating the hydrophilic treatment, we make an experiment with twice treatment and get the result to increase about 12%. We find out the hydrophilic surface treatment method using plasma can improve releasing property of molding tape in the wafer level molding process.

• KSTLE International Journal
• /
• v.5 no.2
• /
• pp.37-43
• /
• 2004

Abstract : Nano/micro-scale friction properties were investigated on Si (100) and three self-assembled monolayers (SAMs) (PFOTC, DMDM, DPDM) coated on Si-wafer by chemical vapor deposition technique. Experiments were conducted at ambient temperature(24$pm$1$circ$C) and humidity(45$pm$5%). Friction at nano-scale was measured using Atomic Force Microscopy (AFM) in the range of 0-40nN normal loads. In both Si-wafer and SAMs, friction increased linearly as a function of applied normal load. Results showed that friction was affected by the inherent adhesion in Ssi-wafer, and in the case of SAMs the physical/chemical structures had a major influence. Coefficient of friction of these test samples at the micro-scale was also energies. In order to study the effect of contact area on coefficient of friction at the micro-scale, friction was measured for Si-wafer and DPDM against Soda Lime balls (Duke Scientiffic Corporation) of different radii (0.25 mm, 0.5 mm and 1 mm) at different applied normal loads (1500, 3000 and 4800 mN). Results showed that Si-wafer had higher coefficient of friction than DPDM. Further, unlike that in the case of DPDM, friction in Si-wafer was severely influenced by its wear. SEM evidences showed that solid-solid adhesion was the wear mechanism in Si-wafer.

• Journal of the Semiconductor & Display Technology
• /
• v.9 no.4
• /
• pp.31-37
• /
• 2010

In this paper, optical deflection of laser scattering has been investigated based on Rayleigh criterion for crystalline silicon wafer in solar cell. A laser scattering mechanism is newly designed using light scattering properties in silicon wafer. Intensity distributions of laser scattering are different, depending on the incident angle of laser computed from Rayleigh criterion. In case of the incident angle satisfied with the criterion, they are asymmetric. Also, their specular reflection angle is shifted to unpredicted ones. These phenomena are in accordance with previous theories of laser scattering. The optical deflection of laser scattering is experimentally identified with the designed laser scattering mechanism. Its mathematical model is presented from the geometric relationship of laser scattering. It is shown that the optical deflection of laser scattering agree with the presented model, exclusive of grazing angles which is satisfied with Rayleigh criterion.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.15 no.1
• /
• pp.34-38
• /
• 2005

Effects of pH level and slurry particle size on material removal rate and planarization of langasite single crystal wafer have been examined. Higher material removal rate was obtained with lower pH level slurries while the planarization was found to be determined by average particle size of colloidal silica slurries. Slurries containing 0.045 ㎛ amorphous silica particles showed the best polishing effect without any scratches on the surface. Effective particle number has a strong effect on the surface planarization and the removal rate, so that the lower effective particle numbers produced low removal rate but the better planarization results.

• Transactions of the Korean Society of Machine Tool Engineers
• /
• v.16 no.5
• /
• pp.90-95
• /
• 2007

Single side final polishing is a very important role to stabilize a wafer finally before the device process on the wafer is executed. In this study, the machining variables, such as pressure, machining time, and the velocity of pad table were adopted. These parameters have the major influence on the characteristics of wafer polishing. We investigated the surface roughness changing these variables to find the optimal polishing condition. Pad, slurry, slurry quantity, and oscillation distance were set to the fixed variables. In order to reduce defects and find a stable machining condition, a hall sensor was used on the polishing process. AE sensor was attached to the polishing machine to verify optimal condition. Applying data analysis of the sensor signal, experiments were performed. We can get better surface roughness from loading the quasi static force and improving wafer-holding method.

• Journal of Welding and Joining
• /
• v.19 no.3
• /
• pp.305-310
• /
• 2001

UBM-coated Si-wafer was fluxlessly soldered with glass substrate in $N_2$ atmosphere using plasma cleaning method. The bulk Sn-37wt.%Pb solder was rolled to the sheet of $100\mu\textrm{m}$ thickness in order to bond a solder disk by fluxless 1st reflow process. The oxide layer on the solder surface was analysed by AES(Auger Electron Spectroscopy). Through rolling, the oxide layer on the solder surface became thin, and it was possible to bond a solder disk on the Si-wafer with fluxless process in $N_2$ gas. The Si-wafer with a solder disk was plasma-cleaned in order to remove oxide layer formed during 1st reflow and soldered to glass by 2nd reflow process without flux in $N_2$ atmosphere. The thickness of oxide layer decreased with increasing plasma power and cleaning time. The optimum plasma cleaning condition for soldering was 500W 12min. The joint was sound and the thicknesses of intermetallic compounds were less than $1\mu\textrm{m}$.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.25 no.10
• /
• pp.1535-1540
• /
• 2001

This study presents the possibility of scratch reduction on wafer in CMP by applying the ultrasonic and megasonic energy into the slurry which might contain large abrasive particles. Experiments were conducted to verify the dispersion ability of agglomerated particles by applying ultrasonic, megasonic waves and analyze the particle distribution of used slurry in case, of sonic energy assisted or none. And the dispersion stability of megasonic waves was investigated through the experiment of stability of the dispersed slurry, Finally, to confirm that the distribution of particles in slurry by ultrasonic waves was actually related to scratches on wafer when CMP was done, tungsten blanket wafer was processed, by CMP to compare and investigate scratches on wafer.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.21 no.10
• /
• pp.1284-1293
• /
• 1997

The electrostatic effect on particle deposition onto a heated, Horizontal free-standing wafer surface was investigated numerically. The deposition mechanisms considered were convection, Brownian and turbulent diffusion, sedimentation, thermophoresis and electrostatic force. The electric charge on particle needed to calculate the electrostatic migration velocity induced by the local electric field was assumed to be the Boltzmann equilibrium charge. The electrostatic forces acted upon the particle included the Coulombic, image, dielectrophoretic and dipole-dipole forces based on the assumption that the particle and wafer surface are conducting. The electric potential distribution needed to calculate the local electric field around the wafer was calculated from the Laplace equation. The averaged and local deposition velocities were obtained for a temperature difference of 0-10 K and an applied voltage of 0-1000 v.The numerical results were then compared with those of the present suggested approximate model and the available experimental data. The comparison showed relatively good agreement between them.

• Journal of Institute of Control, Robotics and Systems
• /
• v.6 no.6
• /
• pp.486-491
• /
• 2000

The dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. But inferior goods are made under the influence of several parameters in dicing such as blade, wafer, cutting water and cutting conditions. This paper describes a monitoring algorithm using neural network in order to find out an instant of vibration signal change when bad dicing appears. The algorithm is composed of two steps: feature extraction and decision. In the feature extraction, five features processed from vibration signal which is acquired by accelerometer attached on blade head are proposed. In the decision, back-propagation neural network is adopted to classify the dicing process into normal and abnormal dicing, and normal and damaged blade. Experiments have been performed for GaAs semiconductor wafer in the case of normal/abnormal dicing and normal/damaged blade. Based upon observation of the experimental results, the proposed scheme shown has a good accuracy of classification performance by which the inferior goods decreased from 35.2% to 6.5%.