• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.11
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• pp.2015-2022
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• 2008

The effect of content of $Al_2O_3+Y_2O_3$ sintering additives on the densification behavior, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressurless-sintered for 2 hours at 1,700[$^{\circ}C$] temperatures with an addition of $Al_2O_3+Y_2O_3$(6 : 4 mixture of $Al_2O_3$ and $Y_2O_3$) as a sintering aid in the range of $8\;{\sim}\;20$[wt%]. Phase analysis of $SiC-ZrB_2$ composites by XRD revealed mostly of $\alpha$-SiC(6H), $ZrB_2$ and In Situ YAG($Al_5Y_3O_{12}$). The relative density, flexural strength, Young's modulus and vicker's hardness showed the highest value of 89.02[%], 81.58[MPa], 31.44[GPa] and 1.34[GPa] for $SiC-ZrB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature respectively. Abnormal grain growth takes place during phase transformation from $\beta$-SiC into $\alpha$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of $3.l4{\times}10^{-2}{\Omega}{\cdot}cm$ for $SiC-ZrB_2$ composite added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at 700[$^{\circ}C$]. The electrical resistivity of the $SiC-TiB_2$ and $SiC-ZrB_2$ composite was all negative temperature coefficient resistance (NTCR) in the temperature ranges from room temperature to 700[$^{\circ}C$]. Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.11
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• pp.505-513
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• 2006

The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites. Phase analysis of composites by XRD revealed mostly of ${\alpha}-SiC(4H),\;ZrB_2,\;{\beta}-SiC(15R)$ and In Situ $YAG(Al_5Y_3O_{12})$. The relative density and the flexural strength showed the highest value of 86.8[%] and 203[Mpa] for $SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature respectively. Owing to crack deflection and crack bridging of fracture toughness mechanism, the fracture toughness showed 3.7 and $3.6[MPa{\cdot}m^{1/2}]\;for\;SiC-ZrB_2$ composites with an addition of 8 and 12[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature respectively. Abnormal grain growth takes place during phase transformation from ${\beta}-SiC\;into\;{\alpha}-SiC$ was correlated with In Situ YAG phase by reaction between $Al_2O_3\;and\;Y_2O_3$ additives during sintering. The electrical resistivity showed the lowest value of $6.5{\times}10^{-3}[({\Omega}{\cdot}cm]$ for the $SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature. The electrical resistivity of the $SiC-ZrB_2$ composites was all positive temperature coefficient(PTCR) in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. The resistance temperature coefficient showed the highest value of $3.53{\times}10^{-3}/[^{\circ}C]\;for\;SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. In this paper, it is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• 한국지구물리탐사학회:학술대회논문집
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• 2005.05a
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• pp.79-86
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• 2005

The apparent source spectrum of the Fukuoka earthquake is estimated at the seismic basement by removing from the observed spectra at Korean seismic stations the path and site responses that were previously revealed through inversion process applied to large spectral D/B accumulated until 2004. The approximate source spectrum is also estimated by using data recorded near the epicenter from various Japanese seismic networks and compared with the Korean source spectrum. The comparison result shows that there is good agreement among source spectra estimated based on the data from seismic networks of Korea at large distances (190km

• Journal of the Korean Vacuum Society
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• v.11 no.1
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• pp.68-75
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• 2002

It is observed the characteristic of the microwave air plasma in the wide range of the operating pressure, 1 mTorr ~ 760 Torr. The microwave air plasma was generated by an AC-type microwave source manufactured with a magnetron taken from a commertial microwave oven and the input power was fixed at 370 W. Characteristics of the plasmas were observed by an injection Langmuir probe and an OES(Optical Emission Spectroscopy). The breakdown electric field is drastically changed at 500 mTorr. For < 500 mTorr, the ratio of the breakdown electric field and the pressure decreased inversely to the pressure, $5.7\times10^4$V/m-Torr.However, the ratio increased linearly as 43 V/m-Torr for the operating pressure, > 500 mTorr. The minimum breakdown electric field was observed about 12. kV/m at 500 mTorr. It corresponds that the input frequency equals to the collision frequency. The effective collision cross section of the air at this pressure was calculated as $9.23\times10^{-l6}\textrm{cm}^2$.The results of the OES measurement revealed that the main ions were composed of the oxygen, argon, and nitrogen for > 500 mTorr. In contrast, only oxygen and argon ions were dominated for < 500 mTorr. ion temperature of oxygen (O(II)) in the air was decreased from about 1.2 eV to 0.5 eV as the pressure increased. Langmuir probe data shows that the plasma density for < 500 mTorr was higher that for > 500 mTorr.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.9
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• pp.434-441
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• 2006

The effect of pressureless-sintered temperature on the densification behavior, mechanical and electrical properties of the $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressureless-sintered for 2 hours at temperatures in the range of $1,750{\sim}1,900[^{\circ}C]$, with an addition of 12[wt%] of $Al_2O_3+Y_2O_3$(6:4 mixture of $Al_2O_3\;and\;Y_2O_3$) as a sintering aid. The relative density and mechanical properties are increased markedly at temperatures in the range of $1,850{\sim}1,900[{^\circ}C]$. The relative density, flexural strength, vicker's hardness and fracture toughness showed the highest value of 81.1[%], 230[MPa], 9.88[GPa] and $6.05[MPa\;m^{1/2}]$ for $SiC-ZrB_2$ composites of $1,900[{^\circ}C]$ sintering temperature at room temperature respectively. The electrical resistivity was measured by the Pauw method in the temperature ranges from $25[{^\circ}C]\;to\;700[{^\circ}C]$, The electrical resistivity showed the value of $1.36{\times}10^{-4},\;3.83{\times}10^{-4},\;3.51{\times}10^{-4}\;and\; 3.2{\times}10^{-4}[{\Omega}{\cdot}cm]$ for SZ1750, SZ1800, SZ1850 and SZ1900 respectively at room temperature. The electrical resistivity of the composites was all PTCR(Positive Temperature Coefficient Resistivity). The resistance temperature coefficient showed the value of $4.194{\times}10^{-3},\;3,740{\times}10^{-3},\;2,993{\times}10^{-3},\;3,472{\times}10^{-3}/[^{\circ}C}$ for SZ1750, SZ1800, SZ1850 and SZ1900 respectively in the temperature ranges from $25[{\circ}C]\;to\;700[{\circ}C]$, It is assumed that because polycrystallines such as recrystallized $SiC-ZrB_2$ electroconductive ceramic composites, contain of porosity and In Situ $YAG(Al_5Y_3O_{12})$ crystal grain boundaries, their electrical conduction mechanism are complicated. In addition, because the condition of such grain boundaries due to $Al_2O_3+Y_2O_3$ additives widely varies with sintering temperature, electrical resistivity of the $SiC-ZrB_2$ electroconductive ceramic composites with sintering temperature also varies with sintering condition. It is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• Applied Chemistry for Engineering
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• v.29 no.5
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• pp.630-634
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• 2018

The recovery of paraffin components contained in the fraction as a part of improving the quality for the fraction of waste plastics pyrolysis oil (WPPO) was investigated by batch cocurrent 4 stages equilibrium extraction. The fraction at a distilling temperature of $120-350^{\circ}C$ recovered from WPPO by the simple distillation and a little water-added dimethylformamide (DMF) solution were used as a raw material and solvent, respectively. As the number of equilibrium extraction (n) and the carbon number of paraffin component increased, the concentration of paraffin component contained in the raffinate increased. The concentrations of $C_{12}$, $C_{14}$, $C16$ and $C_{18}$ paraffin components present in the raffinate recovered at n = 4 were about 1.2, 1.5, 1.6 and 1.8 times higher than those of using the raw materials, respectively. Recovery rates (residue rates present in raffinate) of paraffin components rapidly decreased with increasing n, and increased sharply with increasing the carbon number. Furthermore, it was possible to predict the recovery rates at n = 1 - 4 for all paraffin components ($C_7-C_{24}$) contained in the raw material. The raffinate recovered through this study is expected to be used as a renewable energy.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.151-151
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• 1999

금속-산화막-반도체(MOS) 소자를 이용하는 집적회로의 발전은 게이트 금속의 규격 감소를 필요로 한다. 규격감소에 따른 저항 증가가 중요한 문제점으로 대두되었으며, 그동안 여러 연구자들에 의하여 금속 게이트에 관련된 연구가 진행되어 왔다. 특히 저항이 낮으며 녹는점이 매우 높은 내화성금속(refractory metal)인 텅스텐(tungsten, W)이 차세대 MOS 소자의 유력한 대체 게이트 금속으로 제안되었다. 텅스텐은 스퍼터링(sputtering)과 화학기상 증착(CVD) 방식을 이용하여 성장시킬 수 있다. 스퍼터링에 의한 텅스텐 증착은 산화막과의 접착성은 우수한 반면에 증착과정 동안에 게이트 산화막(SiO2)에 손상을 주어 게이트 산화막의 특성을 열화시킬 수 있다. 반면, 화학기상 증차에 의한 텅스텐 성장은 스퍼터링보다 증착막의 저항이 상대적으로 낮으나 산화막과의 접착성이 좋지 않은 문제를 해결하여야 한다. 본 연구에서는 감압 화학기상 증착(LPCVD)방식을 이용하여 텅스텐 게이트 금속을 100~150$\AA$ 두께의 게이트 산화막(SiO2 또는 N2O 질화막)위에 증착하여 물리 및 전기적 특성을 분석하였다. 물리적 분석을 위하여 XRD, SEM 및 저항등이 증착 조건에 따라서 측정되었으며, 텅스텐 게이트로 구성된 MOS 캐패시터를 제작하여 절연 파괴 강도, 전하 포획 메커니즘 등과 같은 전기적 특성 분석을 실시하였다. 특히 텅스텐의 접착성을 증착조건의 변화에 따라서 분석하였다. 텅스텐 박막의 SiO2와의 접착성은 스카치 테이프 테스트를 실시하여 조사되었고, 증착시의 기판의 온도에 민감하게 반응하는 것을 알 수 있었다. 또한, 40$0^{\circ}C$ 이상에서 안정한 것을 볼 수 있었다. 텅스텐 박막은 $\alpha$ 및 $\beta$-W 구조를 가질 수 있으나 본 연구에서 성장된 텅스텐은 $\alpha$-W 구조를 가지는 것을 XRD 측정으로 확인하였다. 성장된 텅스텐 박막의 저항은 구조에 따라서 변화되는 것으로 알려져 있다. 증착조건에 따른 저항의 변화는 SiH4 대 WF6의 가스비, 증착온도에 따라서 변화하였다. 특히 온도가 40$0^{\circ}C$ 이상, SiH4/WF6의 비가 0.2일 경우 텅스텐을 증착시킨 후에 열처리를 거치지 않은 경우에도 기존에 발표된 저항률인 10$\mu$$\Omega$.cm 대의 값을 얻을 수 있었다. 본 연구를 통하여 산화막과의 접착성 문제를 해결하고 낮은 저항을 얻을 수 있었으나, 텅스텐 박막의 성장과정에 의한 게이트 산화막의 열화는 심각학 문제를 야기하였다. 즉, LPCVD 과정에서 발생한 불소 또는 불소 화합물이 게이트의 산화막에 결함을 발생시킴을 확인하였다. 향후, 불소에 의한 게이트 산화막의 열화를 최소화시킬 수 있는 공정 조건의 최저고하 또는 대체게이트 산화막이 적용될 경우, 개발된 연구 결과를 산업체로 이전할 수 있는 가능성이 높을 것을 기대된다.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.52 no.2
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• pp.130-140
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• 2016

This study analyzed annual catch trend during 45 years and monthly catch of the least 10 years (2005~2014) for chub mackerel caught in the Korean coastal waters. To determine fishing status of chub mackerel, fork length measurements were conducted at least twice every week for 100 individuals randomly selected at the Busan Cooperative Fish Market from January of 2012 to December of 2014; and biological characteristics and proximate composition (moisture, protein, fat, ash) were analyzed by length class (I~IV) on a monthly basis from January to December of 2014. Monthly catch trend showed low level below 5,000 mt from February to July, whereas high level above 15,000 mt from October to December. For the period between 2012 and 2014, annual average catch proportion of juvenile were relatively high at 68.1%, 53.1% and 53.2% from January to April, before spawning season, while those were low at 21.5%, 20.7% and 29.12% from June to November. As for the change in the proximate composition per 100 g of muscle, protein and ash did not change much by seasons and length class, whereas fat and moisture contents showed large fluctuations and complementary relationship between the two factors. Regardless of length class, monthly average fat content, containing Omega-3, showed the lowest at 7.18 g in April and highest at 19.27 g in December, which exhibited 2.6 times difference from one another. Regardless of fishing seasons, fat content by length class were 19.06 g for the class I and 6.43 g for the class IV, which showed three times difference. Fat contents of the class I were high at 26.97 g and 27.19 g in November and December, while low at 8.37 g and 9.99 g in April and May. Especially, fat contents from January to May were 5.0 g, which was the lowest. Therefore, it is expected that consumer could indirectly contribute fisheries management through their understanding and wise consumption based on fishing status and fluctuation of proximate composition.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.537-541
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• 2003

The a-Si:H TFTs using ferroelectric of SrTiO$_3$, as a gate insulator is fabricated on glass. Dielectric characteristics of ferroelectric is better than SiO$_2$, SiN. Ferroelectric increases ON-current, decreases threshold voltage of TFT and also breakdown characteristics. The a-Si:H deposited by PECVD shows absorption band peaks at wavenumber 2,000 $cm^{-1}$ /, 635 $cm^{-1}$ / and 876 $cm^{-1}$ / according to FTIR measurement. Wavenumber 2,000 $cm^{-1}$ /, 635 $cm^{-1}$ / are caused by stretching and rocking mode SiH1. The wavenumber of weaker band, 876 $cm^{-1}$ / is due to SiH$_2$ vibration mode. The a-SiN:H has optical bandgap of 2.61 eV, refractive index of 1.8 - 2.0 and resistivity of 10$^{11}$ - 10$^{15}$ aim respectively. Insulating characteristics of ferroelectric is excellent because dielectric constant of ferroelectric is about 60 - 100 and breakdown strength is over 1 MV/cm. TFT using ferroelectric has channel length of 8 - 20 $\mu$m and channel width of 80 - 200 $\mu$m. And it shows drain current of 3 $\mu$A at 20 gate voltages, Ion/Ioff ratio of 10$^{5}$ - 10$^{6}$ and Vth of 4 - 5 volts.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.163-163
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• 2010

중적외선 영역 ($3{\sim}5\;{\mu}m$)은 공기 중에 존재하는 이산화탄소나 수증기에 의해 흡수가 일어나지 않기 때문에 군사적으로 중요한 파장 영역이며, 야간에 적을 탐지하는데 응용되고 있다. InSb는 77 K에서 중적외선 파장 흡수에 적합한 밴드갭 에너지 (0.228 eV)를 갖고 있으며, 다른 화합물 반도체와 달리 전하 수송자 이동도 (전자: $10^6\;cm^2/Vs$, 정공: $10^4\;cm^2/Vs$)가 매우 빠르기 때문에 적외선 화상 감지기 재료로 매우 적합하다. 또한 현재 중적외선 영역대에서 널리 사용되는 HgCdTe (MCT)와 대등한 소자 성능을 나타냄과 동시에 낮은 기판 가격, 소자의 제작 용이성 때문에 MCT를 대체할 물질로 주목 받고 있다. 하지만, 기판과 절연막의 계면에 존재하는 결함 때문에 에너지 밴드갭 내에 에너지 준위를 형성하여 높은 누설 전류 특성을 보인다. 따라서 InSb 적외선 소자의 구현을 위하여 고품질의 절연막의 연구가 필수적이라고 할 수 있겠다. 절연막의 특성을 알아보기 위해, n형 InSb 기판에 플라즈마 화학 기상 증착법 (PECVD)을 이용하여 $SiO_2$, $Si_3N_4$를 증착하였으며, 증착 온도를 $120^{\circ}C$에서 $240^{\circ}C$까지 $40^{\circ}C$ 간격으로 변화하여 증착온도가 미치는 영향에 대하여 알아보았다. 절연막과 기판의 계면 특성을 분석하기 위하여 77 K에서 커패시턴스-전압 (C-V) 분석을 하였으며, 계면 트랩 밀도는 Terman method를 이용하여 계산하였다 [1]. $Si_3N_4$를 증착하였을 경우, $120{\sim}240^{\circ}C$의 증착 온도에서 $2.4{\sim}4.9{\times}10^{12}\;cm^{-2}eV^{-1}$의 계면 트랩 밀도를 가졌으며, 증착 온도가 증가할수록 계면 트랩 밀도가 증가하는 경향을 보였다. 또한 모든 증착 온도에서 flat band voltage가 음의 전압으로 이동하였다. $SiO_2$의 경우 $120{\sim}200^{\circ}C$의 증착온도에서 $7.1{\sim}7.3{\times}10^{11}\;cm^{-2}eV^{-1}$의 계면 트랩 밀도 값을 보였으나, $240^{\circ}C$ 이상에서 계면 트랩밀도가 $12{\times}10^{11}\;cm^{-2}eV^{-1}$로 크게 증가하였다. $SiO_2$ 절연막을 사용함으로써, $Si_3N_4$ 대비 약 25% 정도 낮은 계면 트랩 밀도를 얻을 수 있었으며, 모든 증착 온도에서 양의 전압으로 flat band voltage가 이동하였다. 두 절연막에 대한 계면 트랩의 원인을 분석하기 위하여 XPS 측정을 진행하였으며, 깊이에 따른 조성 분석을 하였다. 본 실험에서 최적화된 $SiO_2$ 절연막을 이용하여 InSb 소자의 pn 접합 연구를 진행하였다. Be+ 이온 주입을 진행하고, 급속열처리(RTA) 공정을 통하여 p층을 형성하였다. -0.1 V에서 16 nA의 누설 전류 값을 보였으며, $2.6{\times}10^3\;{\Omega}\;cm^2$의 RoA (zero bias resistance area)를 얻을 수 있었다.