• Journal of Sensor Science and Technology
• /
• v.21 no.6
• /
• pp.425-428
• /
• 2012

This paper presents the fabrication and characterization of graphene based hydrogen sensors. Graphene was synthesized by annealing process of Ni/3C-SiC thin films. Graphene was transferred onto oxidized Si substrates for fabrication of chemiresistive type hydrogen sensors. Au electrode on the graphene shows ohmic contact and the resistance is changed with hydrogen concentration. Nanoparticle catalysts of Pd and Pt were decorated. Response factor and response (recovery) time of hydrogen sensors based on the graphene are improved with catalysts. The response factors of pure graphene, Pt and Pd doped graphenes are 0.28, 0.6 and 1.26, respectively, at 50 ppm hydrogen concentration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.04b
• /
• pp.6-9
• /
• 2000

InSb hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at $200^{\circ}C$, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.

• Journal of Advanced Marine Engineering and Technology
• /
• v.27 no.1
• /
• pp.33-41
• /
• 2003

The optical properties of $ZnS_ySe_{1-\chi-y}:Te_{\chi}(\chi<0.08,y~0.11)$ alloys grown by molecular beam epitaxy (MBE) have been investigated by photoluminescence (PL) and PL-excitation (PLE) spectroscopy. Good optical properties and high crystal quality were established with lattice match condition to GaAs substrate. At room temperature, emission in the visible spectrum region from blue to green was obtained by varying the Te content of the ZnSSe:Te alloy. The efficient blue and green emission were assigned to $Te_1 and Te_n(n\geq2)$cluster bound excitons, respectively. Bright green (535 nm) and blue (462 nm) light emitting diodes (LEDs) have been developed using ZnSSe:Te system as an active layer. The turn-on voltage of 2.1 V in current-voltage characteristics is very small compared to that of commercial InGaN-based LEDs (>3.4 V), indicating the formation of a good ohmic contact due to the optimized p-ZnSe/p-ZnTe multi-quantum well (MQW) superlattice electrode layers.

• 한국신재생에너지학회:학술대회논문집
• /
• 2009.06a
• /
• pp.379-381
• /
• 2009

The simulation model for metal-supported Solid Oxide Fuel Cell(SOFC) is developed in this study. Open circuit voltage is calculated using Nernst equation and Gibbs free energy is required by thermodynamic. The exchange current densities are compared with experimental results since exchange current density is most effective factor for the activation loss. Liu's study is used for the exchange current density of cathode, BSCF, and Koide's result is applied for the exchange current density of anode, Ni/YSZ. For the ohmic loss, ionic conductivity of YSZ is described from Kilner's mode and the data are compared with Wanzenberg's experimental data. Diffusivity is an important factor for the mass transfer through the porous medium. Both binary diffusion and Knudsen diffusion are considered as the diffusion mechanism. For validation, simulation results at this work are compared with our experimental results.

• 한국신재생에너지학회:학술대회논문집
• /
• 2007.06a
• /
• pp.157-160
• /
• 2007

The catalyst layer of a proton exchange membrane (PEM) fuel cell is a mixture of polymer, carbon, and platinum. The characteristics of the catalyst layer play critical role in determining the performance of the PEM fuel cell. This research investigates the role of catalyst layer composition using a Central Composite Design (CCD) experiment with two factors which are Nafion content and carbon loading while the platinum catalyst surface area is held constant. For each catalyst layer composition， polarization curves are measured to evaluate cell performance at common operating conditions, Electrochemical Impedance Spectroscopy (EIS), and Cyclic Voltammetry (CV) are then applied to investigate the cause of the observed variations in performance. The results show that both Nafion and carbon content significantly affect MEA performance. The ohmic resistance and active catalyst area of the cell do not correlate with catalyst layer composition, and observed variations in the cell resistance and active catalyst area produced changes in performance that were not significant relative to compositions of catalyst layers.

• Journal of Dairy Science and Biotechnology
• /
• v.32 no.1
• /
• pp.31-36
• /
• 2014

Thermal pasteurization has been effectively used for decades as a method to extend the shelf life of milk and to inactivate any pathogenic bacteria that it may contain; however, it can negatively affect the nutritional properties of milk. In recent years, the food industry has sought new, less aggressive technologies that affect food freshness and its nutritive and health benefits less significantly. Various means have been used to extend the shelf life of dairy foods, such as high-pressure processing, irradiation, ohmic heating, and pulsed electric field (PEF) technologies. Of these, PEF technologies are potential alternatives to traditional thermal milk pasteurization, owing to their advantages in minimizing sensory and nutritional damage. In this review, we have primarily focused on the feasibility of applying PEF technologies to the sterilization of dairy products and briefly discussed whether they should be adopted for use in the dairy beverage industry in the future.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.10
• /
• pp.1786-1790
• /
• 2007

The $(SrCa)TiO_3(SCT)$ thin films are deposited on Pt-coated electrode ($Pt/TiN/SiO_2/Si$) using RF sputtering method at various deposition temperature. The dielectric constant of SCT thin films were increased with the increase of deposition temperature, and changed almost linearly in temperature ranges of $-80{\sim}+90[^{\circ}C]$. Also, SCT thin films was observed the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency was observed above 200[kHz]. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of $25{\sim}100[^{\circ}C]$ can be divided into three characteristic regions with different mechanism by the increasing current. The region 1 below 0.8[MV/cm] shows the ohmic conduction. The region 2 can be explained by the Child's law, and the region 3 is dominated by the tunneling effect.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1333-1335
• /
• 2007

We studied the surface defects and the current distributions of ITO thin films by reflected electron energy loss spectroscopy (REELS) and conductiveatomic force microscope (c-AFM). The ohmic behavior of ITO thin film was observed at $230\;^{\circ}C$ annealed sample. The defects related to the electronic structure decreased after anneal process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.582-585
• /
• 2001

InSb temperature dependent hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at 200$^{\circ}C$, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.2
• /
• pp.158-161
• /
• 2006

The purpose of this research is to establish the crosstalk characteristic of mm-wave Coplanar structure. The components in mm-wave CPW are classified to transmission devices, EM devices, and quasi - TEM devices. After design of these devices, we analyzed these CPW s electromagnetically using FDTD method, and suggested the corsstalk characteristic of mm-wave CPW. In oder to realize a CPW module up to 30 GHz-100 GHz band, we research on a technology of 3-dimensional mm-wave CPW, and GaAs substrate with ohmic lossy layer. As a result this research, we suggested the optimum crosstalk characteristic of mm-wave CPW, and improved the crosstalk quality of mm-wave CPW.