The electronic structures and the electrical properties of ITO thin films by REELS and c-AFM

  • Baik, Min-Kyung (Devices & Materials Laboratory, LG Electronics Institute of Technology) ;
  • Joo, Min-Ho (Devices & Materials Laboratory, LG Electronics Institute of Technology) ;
  • Choi, Jong-Kwon (Devices & Materials Laboratory, LG Electronics Institute of Technology) ;
  • Park, Kyu-Ho (Devices & Materials Laboratory, LG Electronics Institute of Technology) ;
  • Sung, Myeon-Chang (Digital Display Research Laboratory, LG Electronics) ;
  • Lee, Ho-Nyun (Digital Display Research Laboratory, LG Electronics) ;
  • Kim, Hong-Gyu (Digital Display Research Laboratory, LG Electronics)
  • Published : 2007.08.27

Abstract

We studied the surface defects and the current distributions of ITO thin films by reflected electron energy loss spectroscopy (REELS) and conductiveatomic force microscope (c-AFM). The ohmic behavior of ITO thin film was observed at $230\;^{\circ}C$ annealed sample. The defects related to the electronic structure decreased after anneal process.

Keywords