• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1303-1304
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• 2008

Nickel wire of 0.2mm diameter and 50mm in length was exploded in ethanol for Ni nanopower synthesis. The waveform of discharge current shows that the process can be divided by ohmic heating phase and plasma state. The Ni nanopowder classified after synthesis has 100nm of mean diameter.

• Bulletin of Food Technology
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• v.22 no.4
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• pp.808-815
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• 2009

Joule heating은 내부 가열법 중의 하나이며, Ohm의 법칙에 따라서 식품에 직접전기를 통전하여 식품이 갖고 있는 전기저항성에 의해서 식품자체를 자기 발열시키는 가열방법이다. 따라서 Joule 가열을 Ohmic heating 또는 통전가열이라고도 부르고 있다. 열전달성이 느린 고형물 또는 고점도의 Paste형 식품도 어느 정도 전도성이 있으면 신속하면서도 균일하게 열처리를 할 수 있다. 최근 일본에서는 통전가열에 대한 연구가 활발히 진행 중에 있으며, Joule 가열 연구 및 산업화 동향의 일부를 소개하고자 한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.444.2-444.2
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• 2014

Transparent conductors (TCs) are typically applied as an ohmic contact layer for photoelectric devices. Recent researches have illuminated a unique rectifying-junction design between a transparent conductor and a semiconductor layer. This approach may lead a significant reduction of device-fabrication steps and cost. A high-performing heterojunction device is presented, which provided significant photoelectric responses. This covers the fabrication processes, rectifying-junction formations and device analyses.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.379-381
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• 2000

Organic materials have potential advantages to be utilized as semiconductors in field effect transistors and light emmiting diodes. Gold, Aluminium, Silver, Chromium and Indium are used by electrodes. Gold is ohmic contact and the others are schottky contact. In this study, Pentacene and various electrode materials were deposited by Organic Molecular Beam Deposition (OMBD) and vacuum evaporation respectively. Those films were photolithographically patterned for measurements. These devices showed no degration after a 15 days of storage in laboratory environment.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.34 no.9
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• pp.349-354
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• 1985

The conducting currents of polypropylene film was measured a function with electric fields at temperature of 25,35,45( C). It appears that there are four regions of conducting currents, depending upon the strength of the applied electric field` ohmic region based on ionic conduction, Poole-Frenkel region, Schottky region and negative resistance region. Several information of dielectric constant and potential barrier height were obtained.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.143-144
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• 2007

저온 성장이 가능한 MOCVD를 이용하여 단결정 p-Si 기판위에 n-ZnO를 산소분압을 달리하여 성장하였다. 산소유량에 따른 이종접합 다이오드의 전기적 특성을 평가하기위하여 n-ZnO의 전기전도도, 이동도, 캐리어 농도를 측정하였으며, 소자에 저항성 접촉(ohmic contact) 전극을 형성하여 전류-전압 특성을 파악하였다.

• Proceedings of the KIPE Conference
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• 2016.11a
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• pp.226-227
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• 2016

본 논문은 SiC Mosfet Gate Driver에서 Overcurrent상황 발생시 Mosfet 양단의 전압을 검출함으로써 스위칭 소자를 보호하는 Desaturation detction circuit에 대해 다룬다. IGBT와 다르게 SiC Mosfet의 경우 ohmic 영역과 saturation영역의 구분이 명확하지 않기 때문에 과전류 발생시 Mosfet 양단 전압을 검출하는데 어려움이 있다. 따라서 이를 보완하기 위하여 Mosfet drain측에 새로운 회로를 추가로 설계함으로써 이를 보완하여 효과적으로 양단전압을 검출한다.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.112-114
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• 2001

In this letter, we report on the investigation of Si/Ti, Pt/Si/Ti, Co/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at $550^{\circ}C$ for 5 min, $850^{\circ}C$ for 2 min respectively. The contact resistances were measured using the transmission line model method, which resulted in specific $10^{-4}{\Omega}cm^2$, and the physical properties of the contactcontact resistivities in the $9.2{\times}10^{-4}$, $7.1{\times}10^{-4}$ and $4.5{\times}s$ were examined using microscopy, AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature, there was a intermixing of the Ti and Si, migration of into SiC. Overlayer of Pt, Co had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.5
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• pp.1149-1154
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• 2014

To observe the tunneling phenomenon of oxide semiconductor transistor, The Indium-gallum-zinc-oxide thin film transistors deposited on SiOC as a gate insulator was prepared. The interface characteristics between a dielectric and channel were changed in according to the properties of SiOC dielectric materials. The transfer characteristics of a drain-source current ($I_{DS}$) and gate-source voltage ($V_{GS}$) showed the ambipolar or unipolar features according to the Schottky or Ohmic contacts. The ambipolar transfer characteristics was obtained at a transistor with Schottky contact in a range of ${\pm}1V$ bias voltage. However, the unipolar transfer characteristics was shown in a transistor with Ohmic contact by the electron trapping conduction. Moreover, it was improved the on/off switching in a ambipolar transistor by the tunneling phenomenon.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.12
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• pp.27-34
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• 2005

We have investigated the correlation between the active-layer uniformity and reliability of InGaN/GaN blue LEDs. According to initial characteristics, the devices are classified into two groups: group I devices of uniform light-emission and group II devices of non-uniform light-emission. The group II devices are more dependent on temperature and we have found two degradation mechanisms through reliability test. One is bulk degradation in which the degradation occurred over the entire chip and another one is edge degradation in which the degradation occurred from the edge of the chip. Bulk degradation caused by the nonradiative defects is found to be faster in group II devices while there is no difference in the rate of the much faster edge degradation, where darkening starts from the n-Ohmic contact edge. Therefore, more uniform active layer, more uniform current spreading, and the passivation of the dry-etched side-wall are essential for the high reliability of InGaN/GaN LEDs.