대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
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Co/Si/Ti P형 4H-SiC 오옴성 접합에서 낮은 접촉 저항에 관한 연구

Low Resistivity Ohmic Co/Si/Ti Contacts to P-type 4H-SiC

  • 양성준 (순천향대학교 정보기술공학부) ;
  • 이주헌 (순천향대학교 정보기술공학부) ;
  • 노일호 (순천향대학교 정보기술공학부) ;
  • 김창교 (순천향대학교 정보기술공학부) ;
  • 조남인 (선문대학교 전자공학과) ;
  • 정경화 (선문대학교 전자공학과) ;
  • 김은동 (한국전기연구소) ;
  • 김남균 (한국전기연구소)
  • Yang, S.J. (Division of Information Technology Engineering, Soonchunhyang University) ;
  • Lee, J.H. (Division of Information Technology Engineering, Soonchunhyang University) ;
  • Nho, I.H. (Division of Information Technology Engineering, Soonchunhyang University) ;
  • Kim, C.K. (Division of Information Technology Engineering, Soonchunhyang University) ;
  • Cho, N.I. (Electronic Engineering, Sun Moon University) ;
  • Jung, K.H. (Electronic Engineering, Sun Moon University) ;
  • Kim, E.D. (Korea Electrotechnology Research Institute) ;
  • Kim, N.K. (Korea Electrotechnology Research Institute)
  • 발행 : 2001.11.03
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초록

In this letter, we report on the investigation of Si/Ti, Pt/Si/Ti, Co/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at $550^{\circ}C$ for 5 min, $850^{\circ}C$ for 2 min respectively. The contact resistances were measured using the transmission line model method, which resulted in specific $10^{-4}{\Omega}cm^2$, and the physical properties of the contactcontact resistivities in the $9.2{\times}10^{-4}$, $7.1{\times}10^{-4}$ and $4.5{\times}s$ were examined using microscopy, AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature, there was a intermixing of the Ti and Si, migration of into SiC. Overlayer of Pt, Co had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.

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