• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.531-532
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• 2005

We have used ITO/$Alq_3$/Al structure to study electrical conduction mechanism in $Alq_3$ based organic light emitting diode. Current-voltage characteristics were measured at room temperature by varying the thickness of $Alq_3$ layer from 60 to 400nm. We were able to prove that there are three different mechanism depending on the applied voltage; Ohmic, SCLC (space-charge-limited current). and TCLC (trap-charge -limited current) mechanism.

• Elastomers and Composites
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• v.33 no.4
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• pp.246-254
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• 1998

In order to investigate the characteristics of resistance and conduction of vulcanized styrene butadiene rubber (SBR)/ carbon black (CB) composites, surface/ volume resistivity, point to point resistance, decay time, and electrical conduction experiments with four different kinds of non-conductive carbon black were measured. When about 50phr of carbon black were loaded in SBR, all resistivites suddenly decreased and critical region (Rc) was shown. Current densities of SBR/CB composites showed critical point (Pc) and increased with the electric fields. Electrical conduction mechanisms of SBR/CB composites could be considered as the ohmic conduction at low electric fields and the space charge limited conduction (SCLC) at high electric fields, respectively.

• Applied Chemistry for Engineering
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• v.29 no.6
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• pp.789-798
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• 2018

The role of empirical equation to predict the performance of polymer electrolyte membrane fuel cell is important. The activation, ohmic and mass transfer losses were separated in a polarization curve, and the curve fitting according to each region was performed using Kim's model and Hao's model. Changes of each loss were compared according to operation variables of the temperature, pressure, oxygen concentration and membrane thickness. The existing model showed a good fitting convergence, but less fitting accuracy in the separated loss region. A new model using the convergence coefficient was suggested to improve the accuracy of performance prediction of fuel cells of which results were demonstrated.

• International Journal of Precision Engineering and Manufacturing-Green Technology
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• v.5 no.5
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• pp.637-642
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• 2018

The impact of the sintering process, especially in terms of sintering temperature and sintering aid concentration, on the ohmic transport and electrode performance of $(La_{0.80}Sr_{0.20})_{0.95}CoO_{3-{\delta}}$-gadolinia-doped ceria (LSCF-GDC) cathodes is studied. The ohmic and charge-transfer kinetics exhibit a highly coupled $Co_3O_4$ concentration dependency, showing the best performances at an optimum range of 4-5 wt%. This is ascribed to small grain sizes and improved connection between particles. The addition of $Co_3O_4$ was also found to have a dominant impact on charge-transfer kinetics in the LSCF-GDC composite layer and a moderate impact on the electronic transport in the current-collecting LSCF layer. Care should be taken to avoid a formation of excessive thermal stresses between layers when adding $Co_3O_4$.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.329-333
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• 2011

To develop wide-band noise absorbers with a special design for low-frequency performance, this study proposes a tin oxide (Sn-O) thin films as the noise absorbing materials in a microstrip line. Sn-O thin films were deposited on polyimide film substrates by reactive sputtering of the Sn target under flowing $O_{2}$ gas, exhibiting a wide variation of surface resistance (in the range of $10^{0}-10^{5}{\Omega}$) depending on the oxygen partial pressure during deposition. The microstrip line with characteristic impedance of $50\Omega$ was used for the measurement of noise absorption by the Sn-O films. The reflection parameter $(S_{11})$ increased with a decrease of surface resistance due to an impedance mismatch at the boundary between the film and the microstrip line. Meanwhile, the transmission parameter $(S_{21})$ diminished with a decrease of surface resistance resulting from an Ohmic loss of the Sn-O films. The maximum noise absorption predicted at an optimum surface resistance of the Sn-O films was about $150{\Omega}$. For this film, greater power absorption is predicted in the lower frequency region (about 70% at 1 GHz) than in conventional magnetic sheets of high magnetic loss, indicating that Ohmic loss is the predominant loss parameter for the conduction noise absorption in the low frequency band.

• Transactions of the Korean hydrogen and new energy society
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• v.35 no.1
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• pp.48-55
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• 2024

The electrochemically active site of mixed ionic and electronic conductor (MIEC) as a cathode material is restricted to the triple phase boundary in protonic ceramic fuel cells (PCFCs) due to the insufficient of proton-conducting properties of MIEC. This study primarily focused on expanding the electrochemically active site by La_0.6Sr_0.4Co_0.2Fe_0.8O_3-δ(LSCF6428)-BaZr_0.4Ce_0.4Y_0.1Yb_0.1O_3-δ (BZCYYb4411) composite cathode. The electrochemical properties of the composite cathode were evaluated using anode-supported PCFC single cells. In comparison to the LSCF6428 cathode, the peak power density of the LSCF6428-BZCYYb4411 composite cathode is much enhanced by the reduction in both ohmic and non-ohmic resistance, possibly due to the increased electrochemically active site.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.587-592
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• 2010

We have fabricated schottky barrier diode (SBDs) using polar (c-plane) and non polar (a-, m-plane) n-type 6H-SiC wafers. Ni/SiC ohmic contact was accomplished on the backside of the SiC wafers by thermal evaporation and annealed for 20minutes at $950^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The specific contact resistance was $3.6{\times}10^{-4}{\Omega}cm^2$ after annealing at $950^{\circ}C$. The XRD results of the alloyed contact layer show that formation of $NiSi_2$ layer might be responsible for the ohmic contact. The active rectifying electrode was formed by the same thermal evaporation of Ni thin film on topside of the SiC wafers and annealed for 5 minutes at $500^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The electrical properties of SBDs have been characterized by means of I-V and C-V curves. The forward voltage drop is about 0.95 V, 0.8 V and 0.8 V for c-, a- and m-plane SiC SBDs respectively. The ideality factor (${\eta}$) of all SBDs have been calculated from log(I)-V plot. The values of ideality factor were 1.46, 1.46 and 1.61 for c-, a- and m-plane SiC SBDs, respectively. The schottky barrier height (SBH) of all SBDs have been calculated from C-V curve. The values of SBH were 1.37 eV, 1.09 eV and 1.02 eV for c-, a- and m-plane SiC SBDs, respectively.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.134-134
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• 2010

Fuel cell is a device that directly converts chemical energy in the form of a fuel into electrical energy by way of an electrochemical reaction. In the anode for a high temperature fuel cell, nickel or nickel alloy has been used in consideration of the cost, oxidation catalystic ability of hydrogen which is used as fuel, electron conductivity, and high temperature stability in reducing atmosphere. Most MCFC stacks currently operate at an average temperature of $650^{\circ}C$. There is some gains with decreased temperature in MCFC to diminish the electrolyte loss from evaporation and the material corrosion, which could improve the MCFC life. However, operating temperature has a strong related on a number of electrode reaction rates and ohmic losses. Baker et al. reported the effect of temperature (575 to $650^{\circ}C$). The rates of cell voltage loss were 1.4mV/$^{\circ}C$ for a reduction in temperature from 650 to $600^{\circ}C$, and 2.16mV/$^{\circ}C$ for a decrease from 600 to $575^{\circ}C$. The two major contributors responsible for the change in cell voltage with reducing operation temperature are the ohmic polarization and electrode polarization. It appears that in the temperature range of 550 to $650^{\circ}C$, about 1/3 of the total change in cell voltage with decreasing temperature is due to an increase in ohmic polarization, and the electrode polarization at the anode and cathode. In addition, the oxidation reaction of hydrogen on an ordinary nickel alloy anode in MCFC is generally considered to take place in the three phase zone, but anyway the area contributing to this reaction is limited. Therefore, in order to maintain a high performance of the fuel cell, it is necessary to keep this reaction responsible area as wide as possible, that is, it is needed to keep the porosity and specific surface area of the anode at a high level. In this study effective anodes are prepared for low temperature MCFC capable of enhancing the cell performance by using zirconium hydride at least in part of anode material.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.115-115
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• 1999

GaN는 직접천이형 wide band gap(3.4eV) 반도체로서 청색/자외선 발광소자 및 고출력 전자장비등에의 응용성 때문에 폭넓게 연구되고 있다. 이러한 넓은 분야의 응용을 위해서는 열 적으로 안정된 Ohmic contact을 반드시 실현되어야 한다. n-type GaN의 경우에는 GaN계면에서의 N vacancy가 n-type carrier로 작용하기 때문에 Ti, Al, 같은 금속을 접합하여 nitride를 형성함에 의해서 낮은 접촉저항을 갖는 Ohmic contact을 하기가 쉽다. 그러나 p-type의 경우에는 일 함수가 크고 n-type와 다르게 nitride가 형성되지 않는 금속이 Ohmic contact을 할 가능성이 많다. 시료는 HF(HF:H2O=1:1)에서 10분간 초음파 세척을 한 후 깨끗한 물에 충분히 헹구었다. 그런 후에 고순도 Ar 가스로 건조시켰다. Pd와 Ni은 열적 증착법(thermal evaporation)을 사용하여 p-GaN에 상온에서 증착하였다. 현 연구에서는 열처리에 의한 Pd의 clustering을 줄이기 위해서 wetting이 좋은 Ni을 Pd 증착 전과 후에 삽입하였으며, monchromatic XPS(x-ray photoelectron spectroscopy) 와 SAM(scanning Auger microscopy)을 사용하여 열처리 전과 40$0^{\circ}C$, 52$0^{\circ}C$ 그리고 695$0^{\circ}C$에서 3분간 열처리 후의 온도에 따른 morphology 변화, 계면반응(interfacial reaction) 및 벤드 휨(band bending)을 비교 연구하였다. Nls core level peak를 사용한 band bending에서 Schottky barrier height는 Pd/Ni bi-layer 접합시 2.1eV를, Ni/Pd bi-layer의 경우에 2.01eV를 얻었으며, 이는 Pd와 Ni의 이상적인 Schottky barrier height 값 2.38eV, 2.35eV와 비교해 볼 때 매우 유사한 값임을 알 수 있다. 시료를 후열처리함에 의해 52$0^{\circ}C$까지는 barrier height는 큰 변화가 없으나, $650^{\circ}C$에서 3분 열처리 후에 0.36eV, 0.28eV 만큼 band가 더 ？을 알 수 있었다. Pd/Ni 및 Ni/Pd 접합시 $650^{\circ}C$까지 후 열 처리 과정에서 계면에서 matallic Ga은 온도에 비례하여 많은 양이 형성되어 표면으로 편석(segregation)되어지나, In-situ SAM을 이용한 depth profile을 통해서 Ni/Pd, Pd/Ni는 증착시 uniform하게 성장함을 알 수 있었으며, 후열처리 함에 의해서 점차적으로 morphology 의 변화가 일어나기 시작함을 볼 수 있었다. 이는 $650^{\circ}C$에서 열처리 한후의 ex-situ AFM을 통해서 재확인 할 수 있었다. 이상의 결과로부터 GaN에 Pd를 접합 시 심한 clustering이 형성되어 Ohoic contact에 문제가 있으나 Pd/Ni 혹은 Ni/Pd bi-layer를 사용함에 의해서 clustering의 크기를 줄일 수 있었다. Clustering의 크기는 Ni/Pd bi-layer의 경우가 작았으며, $650^{\circ}C$ 열처리 후에 barrier height는 Pd/Ni bi-layer의 경우에도 Ni의 영향을 받음을 알 수 있었다.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.10-13
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• 2010

We studied the effect of $O_2$ plasma treatments on the electrical property of Ti / Al ohmic contacts to N-face n-type GaN. The surface of N-face, n-type GaN has been treated with $O_2$ plasma for 120 s before the deposition of bilayered electrodes, Ti (50 nm) / Al (35 nm), and its contact resistance was compared with that of the reference sample without $O_2$ plasma. As a result, we found that the ohmic contact was reduced from $4.3\;{\times}\;10^{-1}\;{\Omega}cm^2$ to $1.25\;{\times}\;10^{-3}\;{\Omega}cm^2$ by applying $O_2$ plasma on the surface of n-type GaN, which was attributed to the reduction in the Schottky barrier height (SBH), caused by nitrogen vacancies formed during the $O_2$ plasma process.