• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.280-281
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• 2011

We fabricated the devices of TFT type with the amorphous chalcogenide channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is about 4 order. Based on the experiments, we contained the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

• Journal of the Korean Society for Nondestructive Testing
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• v.36 no.4
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• pp.288-294
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• 2016

This paper aims to compare the ability to detect notch defects existing in the plate and welded area using a flexible ECA (eddy current array) probe with OmniScan MX and MS-5800E. The characteristics of signals with various frequencies and lift-offs were also compared. As a result, when signals of frequencies 500, 1000, and 1500 kHz were used, the amplitude of the signal increased, as the depth of the notch increased, but reduced linearly in accordance with the lift-off variation. In addition, the detection sensitivity of the weld defect was found to be closely related to the contact surface of the probe and specimen. In this paper, it was demonstrated that the detection sensitivity was excellent when the contact surface of the probe and the specimen was sufficient, but it was poor when the contact surface was insufficient.

• Journal of IKEEE
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• v.25 no.4
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• pp.774-777
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• 2021

In this paper, we analyzed the gate controllability of 3D NAND Flash Memory with Charge Trap Flash using Ferroelectric (CTF-F) structure. HfO₂, a ferroelectric material, has a high-k characteristic besides polarization. Due to these characteristics, gate controllability is increased in CTF-F structure and on/off current characteristics are improved in Bit Line(BL). As a result of the simulation, in the CTF-F structure, the channel length of String Select Line(SSL) and Ground Select Line(GSL) was 100 nm, which was reduced by 33% compared to the conventional CTF structure, but almost the same off-current characteristics were confirmed. In addition, it was confirmed that the inversion layer was formed stronger in the channel during the program operation, and the current through the BL was increased by about 2 times.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.912-917
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• 2006

In this paper, Trench emitter electrode IGBT structure is proposed and studied numerically using the device simulator, MEDICI. The breakdown voltage, on-state voltage drop, latch up current density and turn-off time of the proposed structure are compared with those of the conventional trench gate IGBT(TIGBT) structures. Enhancement of the breakdown voltage by 19 % is obtained in the proposed structure due to dispersion of electric field at the edge of the bottom trench gate by trench emitter electrode. In addition, the on-state voltage drop and the latch up current density are improved by 25 %, 16 % respectively. However increase of turn-off time in proposed structures are negligible.

• Proceedings of the KIEE Conference
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• 2008.04c
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• pp.53-55
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• 2008

복합층에서 나타나는 투과형 펄스와전류(Pulsed Eddy Current; PEC) 탐상신호를 수치해석 방법을 사용하여 예측하고 분석하였다. 공기층이 없는 복합층에서 Ti-6Al-4V의 두께가 변하는 경우에는 Lift-off를 변화시켰을 때 나타나는 펄스와전류 신호특성과 LOI(Lift-off Intersection)가 형성되는 것을 관찰할 수 있었고, Aluminum의 두께가 변하는 경우에는 Aluminum만의 두께변화 시 발생하던 신호특성이 났다. 공기층이 있는 복합층에서는 Lift-off를 변화시켰을 때 나타나는 신호특성과 LOI가 형성되었고, 공기층이 증가하면 피크 값이 감소하는 것을 볼 수 있었다.

• Proceedings of the KIPE Conference
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• 2003.07a
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• pp.327-331
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• 2003

This paper proposes a novel ZVZCS-PWM Boost Converter. It enables the main switch to be turned on and off with both zero voltage and zero current and the auxiliary switch to be turned on and off with ZCS, the rectify diode to be turned on and off with ZVS. Moreover, this converter is suitable for not on]y minority carrier device but also majority carrier device. The auxiliary resonant circuit of the proposed boost converter is placed out the main power path, therefore, there are no voltage/current stresses on the main switch and diode. The operation of the proposed boost converter is explained and analyzed theoretical and experimentally, from a prototype operating at 100kHz, with an input voltage rated at 50V.

• Journal of Korea Multimedia Society
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• v.4 no.3
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• pp.205-214
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• 2001

As the real time multimedia data service has become available due to the rapid progress of computer and Internet technology, the users can enjoy the newly developed service, which is called Video On-Dem-and(VOD). However, most of service providers have not paid their attention much on the software for various service modes on VOD, but they are only concentrating un the hardware to provide with the high resolution video display. Therefore, the service providers are recently to pay more attention on the software to cope with the various demands of users than hardware. So this paper has designed and implemented the VOD service system for those demands. Since the VOD service system suggested by this paper enable off-line search functions through E-mail, the users can possibly get the necessary information from off-line Search without connecting to the server while the current VOD service can prominently help users to save the time and effort to sea고 and select the Video contents by using periodical current awareness service supported by PUSH technology and user oriented information booking and feedback service supported by SDI service.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.1012-1015
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• 1992

A gate-turn-off thyristor (GTO) that has a fuction of self-commutation is a device that can be turned on like a thyristor with a single pulse of gate current and turned-off by injecting a negative gate current pulse. GTOs have been in existence almost from the beginning of thyristor era, recently are these devices being developed with large power-handling capabilities and improved performance, and they are gaining popularity In conversion equipment. In this paper, the effects of internal parameters of GTO model using a circuit containing two transistors and three resistors the switching operation and the turn-off snubber characteristics is investigated using SPICE program.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2002.05a
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• pp.35-35
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• 2002

Atomic force microscopy was applied to study the formation and growth mechanism of thin chrome layers prepared under various pulse plating conditions. The chrome was electro-deposited from an electrolyte bath containing 250 gl-l of chromic acid, 25 gl-l of sulfuric acid using direct current density of $1.6{\;}mA.$\textrm{mm}^{-2} and pulse currents with on-off time from 5 to 900 ms. The higher current density enhanced nucleation rate which resulted in refining grain size. The chrome growth kinetics determining nodule size and shape significantly depends on the duration of on-time rather than duration of off-time and on/off time ratio.

• Proceedings of the KIPE Conference
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• 1998.10a
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• pp.668-676
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• 1998

A passive energy recovery snubber for high-power-factor boost rectifier, in which the main switch is described in terms of the equivalent circuits that are operational during turn-on and turn-off sequences. These equivalent circuits are analyzed so that the overshoot voltage across the main switch, the snubber current, and the turn-off transition time can be predicted analytically. The main switch combined with proposed snubber can be turned on with zero current and turned off at limited voltage stress. The high-power-factor boost rectifier with proposed snubber is implemented, and the experimental results are presented to confirm the validity of proposed snubber.