• 한국전기전자재료학회논문지
• /
• 제18권1호
• /
• pp.17-23
• /
• 2005

The switching characteristics of MOS-Controlled Thyristor(MCT) is studied with variation of the channel length and impurity concentration in ON and OFF FET channel. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator and PSPICE simulator are used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of channel length and impurity concentration in P and N channel. The channel length and N impurity concentration of the proposed MCT power device show the strong affect on the transient characteristics of current and power. The N channel length affects only on the OFF characteristics of power and anode current, while the N doping concentration in P channel affects on the ON and OFF characteristics.

• 한국콘크리트학회:학술대회논문집
• /
• 한국콘크리트학회 1998년도 가을 학술발표대회 논문집(III)
• /
• pp.668-673
• /
• 1998

The specimen of current study has the same type with the 3-span slabs of Burns et al used in the study by Mojtahedi/Gamble, which laid a ground for the revision of the ACI318-77 code to the ACI 318-83 code. But those specimens was failed prematurely before it reached the ultimate strength which the specimen had. The reason is that bonded reinforcements were cut off where there is no need for the flexural reinforcement. As results. the slabs failed ultimately where the reinforcements was cut off. Thus, the tendon stresses of failure may have been much smaller than the values which culd reach if the bonded reinforcements were extended beyond the theoretical cut off points. On the based on the fact mentioned above. the specimens which had the same conditions as the specimens of Burns et al were used in the current study, but in which the reinforcements were distributed in a sequence for the reinforcements not to be cut anywhere in the 3-span. As a results, it was known that the current ACI code, revised by the result of Mojtahedi/Gamble's study, overestimated the effect of span/depth ratio on the members with high span/depth ratio. Thus it was concluded that the effect of span/depth ratio on the ultimate stress of unbonded tendon regulated by the current ACI code must be reconsidered and reevaluated.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제48권5호
• /
• pp.315-318
• /
• 1999

We have proposed and fabricated the new bottom-gated polycrystalline silicon (poly-Si) thin film transistor (TFT) with a partial amorphous-Si region by employing the selective laser annealing. The channel layer of the proposed TFTs is composed of poly-Si region in the center and a-Si region in the edge. The TEM image shows that the local a-Si region is successfully fabricated by the effective cut out of the incident laser light in the upper a-Si layer. Our experimental results show that the ON/OFF current ratio is increased significantly by more than three orders in the new poly-Si TFT compared with conventional poly-Si TFT. The leakage current is decreased significantly due to the highly resistive a-Si re TFTs while the ON-series resistance of the local a-Si is reduced significantly due to the considerable inducement of electron carriers by the positive gate bias, so that the ON-current is not decreased much.

• 한국컴퓨터정보학회논문지
• /
• 제23권9호
• /
• pp.113-122
• /
• 2018

In this paper, IoT(Internet of things) technology, which is the core of the 4th industrial revolution, was applied to the study of reduction of consumption current. The IoT is a sensor that collects data, a sensor communication, a gateway that processes and stores the collected data. Data application of IoT technology is applied to smart home, smart city, healthcare, smart factory, etc. and it needs to be applied to various industrial fields. By sensing the location of the sensor device, the specific functions of the gateway and the platform are turned ON and OFF to reduce the consumption current of the equipment during the OFF period. When the sensor device accesses the gateway, the specific function of the gateway is turned ON and When the device is separated from the gateway, it senses the sensitivity of the wireless signal and automatically turns off the certain functions. As a resurt, it has reduced the consumption of current. In this paper, we propose a novel system for detecting the location of sensor devices by applying IoT technology. The system implementation is realized by software based, and defines the requirements for the implementation of the sensor device gateway. The gateway automatically detects the location, movement of the device and performs necessary functions. Finally verifies the automatic detection performance of the gateway according to the location of the device. It will contribute greatly to the development of the smart city and office.

• 한국전기전자재료학회논문지
• /
• 제25권9호
• /
• pp.723-726
• /
• 2012

A current intensity convertible CLD chip was fabricated using small and large FET cell configuration. Pinch-off current of 8.82 mA and 11.56 mA were obtained for small and large cell in the CLD chip, respectively. Constant current was fairly maintained until the breakdown voltage of 60 V. Measured knee voltage, $V_k$ were 3.8 V and 4.5 V for small and large cell, respectively. We configured current amplifying chip with parallel connection of each cells, by connecting 8 individual large cells in parallel network, 92.0 mA of current was obtained. The pinch-off constant current of CLD chip was varied very linearly with respect to the number of parallel connected cell.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 1998년도 전력전자학술대회 논문집
• /
• pp.323-327
• /
• 1998

Under high power IGBTs Switching, a large overvoltage is induced across the IGBT module due to the stray inductance in the circuit. This paper proposes a new gate drive circuit for high power IGBTs which can actively suppress the overvoltage across the driven IGBT at turn-off while preserving the most simple and reliable power circuit. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage can be limited much effectively at the fault collector current. Experimental results under various normal and fault conditions prove the effectiveness of the proposed.

• 전력전자학회논문지
• /
• 제6권6호
• /
• pp.506-513
• /
• 2001

SRM의 토크는 상전류와 인덕턱스의 기울기에 따라 달라진다. 그러나 자기회로의 포화로 인하여 원하는 토크를 제어하기 어렵다. 원하는 토크를 발생시키기 위해 SRM 드라이브는 스위치-온각, 스위치-오프각 그리고 인가 접압에 의해 제어된다. 스위치-온, 오프 각 에의해 원하는 전류와 토크를 제어할수있다. 본 논문은 스위치 온, 오프각을 제어하는 최적제어방식을 제안하였다. 스위치 오프 각은 시뮬레이션과 실험을 통하여 효율을 기준으로 결정하였으며, 스위치 온각은 부하에 의해 결정되었다. 도통각은 토크제어와 속도제어를 위해 GA-신경회로망을 이용하여 제어하였다.

• 대한전기학회논문지
• /
• 제45권4호
• /
• pp.562-567
• /
• 1996

A new lateral MOS controlled thyristor, named Shorted Anode LMCT(SA-LMCT), is proposed and analyzed by a two-dimensional device simulation. The device structure employs the implanted n+ layer which shorts the p+ anode together by a common metal electrode and provides a electron conduction path during turn-off period. The turn-off is achieved by not only diverting the hole current through the p+ cathode short but also providing the electron conduction path from the n-base into the n+ anode electrode. In addition, the modified shorted anode LMCT, which has an n+ short junction located inside the p+ anode junction, is also presented. It is shown that the modified SA-LMCT enjoys the advantage of no snap-back behavior in the forward characteristics with little sacrificing of the forward voltage drop. The simulation result shows that the turn-off times of SA-LMCT can be reduced by one-forth and the maximum controllable current density may be increased by 45 times at the expense of 0.34 V forward voltage drop as compared with conventional LMCT. (author). 11 refs., 6 figs., 1 tab.

• Journal of Power Electronics
• /
• 제19권1호
• /
• pp.11-23
• /
• 2019

In this study, a novel zero voltage zero current transition (ZVZCT) bidirectional DC-DC converter is proposed by employing coupled inductors. This converter can turn the main switch on at ZVZCT and it can turn it off with zero voltage switching (ZVS) for both the boost and buck modes. These characteristics are obtained by using a simple auxiliary sub-circuit regardless of the power flow direction. In the boost mode, the auxiliary switch achieves zero current switching (ZCS) turn-on and ZVS turn off. Due to the coupling inductors, this converter can make further efficiency improvements because the resonant energy in the capacitor or inductor can be transferred to the load. The main diode operates with ZVT turn-on and ZCS turn-off in the boost mode. For the buck mode, there is a releasing circuit to conduct the currents generated by the magnetic flux leakage to the output. The auxiliary switch turns on with ZCS and it turns off with ZVT. The main diode also turns on with ZVT and turns off with ZCS. The design method and operation principles of the converter are discussed. A 500 W experimental prototype has been built and verified by experimental results.

• 전력전자학회논문지
• /
• 제11권4호
• /
• pp.307-312
• /
• 2006

본 논문에서는 직류링크전류를 기반으로 SRM의 상전류를 추정하였고 이를 이용한 SRM 에 대한 속도제어법을 제안하였다. 또한 직류링크전류검출회로를 제안하여 전류검출분해능을 높일 수 있었으며 오프셋에 의한 영향을 최소화시킬 수 있는 장점을 가지고 있다. 상전류 정보를 이용한 SRM 구동방식과 직류링크전류정보를 이용한 SRM 구동방식을 실제실험을 통하여 비교함으로서 본 논문에서 제안한 상전류 추정알고리즘과 이에 관련된 직류링크전류 검출회로에 대한 유효성이 검증되었고 직류링크전류를 이용한 SRM 속도제어시스템은 속도응답이 3 상 전류정보를 이용한 시스템만큼 빠른 응답특성이 있음을 확인하였다.