• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권8호
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• pp.463-467
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• 2000

In this paper, the new LIGBT structures with trap injection are proposed to improve switching characteristics of the conventional SOI LIGBT. The Simulations are performed in order to investigate the effects of the positiion, whidth and concentration of trap injection region with a reduced minority carrier lifetime using 2D device simulator MEDICI. Their electrical characteristics are analyzed and the optimum design parameters are extracted. As a result of simulation, the turn off time for the model A with the trap injection is $0.78\mus$. These results indicate the improvement of about 2 times compared with the conventional SOI LIGBT because trap injection prevents minority carriers which is stored in the n-drift region during turn off switching. The latching current is $1.5\times10^{-4}A/\mum$ and forward blocking voltage is 168V which are superior to those of conventional structure. It is shown that the trap injection is very effective to reduce the turn off time with a little increasing of on-state voltage drop if its design and process parameters are optimized.

• International Journal of Control, Automation, and Systems
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• 제5권6호
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• pp.652-662
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• 2007

This paper presents a new and simple method for sensorless operation of matrix converter drives using a constant air-gap flux and the imaginary power flowing to the motor. To improve low-speed sensorless performance, the non-linearities of a matrix converter drive such as commutation delays, turn-on and turn-off times of switching devices, and on-state switching device voltage drop are modeled using PQR transformation and compensated using a reference current control scheme. The proposed compensation method is applied for high performance induction motor drives using a 3 kW matrix converter system. Experimental results are shown to illustrate the feasibility of the proposed strategy.

• 전기학회논문지
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• 제56권3호
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• pp.524-530
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• 2007

This paper presents a new and simple method for sensorless operation of matrix converter drives using a constant air-gap flux and the imaginary power flowing to the motor. To improve low-speed sensorless performance, the non-linearities of a matrix converter drive such as commutation delays, turn-on and turn-off times of switching devices, and on-state switching device voltage drop are modelled using PQR transformation and compensated using a reference power control scheme. The proposed compensation method is applied for high performance induction motor drives using a 3 kW matrix converter system. Experimental results are shown to illustrate the feasibility of the proposed strategy.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제53권12호
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• pp.751-758
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• 2004

This paper presents a new method to compensate the non-linearity for matrix converter drives using PQR instantaneous Power theory. The non-linearity of matrix converter drives such as commutation delay, turn-on and turn-off time of switching device, and on-state switching device voltage drop is modelled by PQR power theory and compensated using a reference current control scheme. The proposed method does not need any additional hardware and off-line experimental measurements. The proposed compensation method is applied for high performance induction motor drives using a 3 kW matrix converter system without a speed sensor. Simulation and experimental results show the proposed method using PQR power theory Provides good compensating characteristic.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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• pp.441-444
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• 1997

최근 전력용 반도체 소자로서 많이 사용되고 있는 IGBT를 이용한 시스템의 제작시 신뢰성의 향상을 위해 시스템 운전시 정확한 접합부 온도를 순시적으로 추정할 필요가 있다. 기존의 소자온도 추정 방법들은 시스템 운전시의 순시적 추정이 아니라는 점과 정확한 접합부 온도가 아니라는 점이 문제가 된다. 본 논문에서는 시스템 운전시의 접합부 온도를 순시적으로 정확하게 추정할 수 있는 방법을 제시하여 경제적으로 시스템의 효율과 신뢰성을 높일 수 있도록 하였다.

• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1264-1270
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• 2004

A fast switching thyristor with a superior trade-off property between the on-state voltage drop and the turn-off time could be fabricated by the proton irradiation method. After making symmetric thyristor dies with a voltage rating of 1,600 V from 350 $\mu$m thickness of 60 $\Omega$ㆍcm NTD-Si wafer and 200 $\mu$m width of n-base drift layer, the local carrier lifetime control by the proton irradiation was performed with help of the HI-13 tandem accelerator in China. The thyristor samples irradiated with 4.7 MeV proton beam showed a superior trade-off relationship of $V_{TM}$ = 1.55 V and $t_{q}$ = 15 $\mu$s attributed to a very narrow layer of short carrier lifetime(～1 $\mu$s) in the middle of its n-base drift region. To explain the small increase of $V_{TM}$ , we will introduce the effect of carrier compensation at the low carrier lifetime region by the diffusion current.ffusion current.t.

• 전력전자학회논문지
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• 제25권5호
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• pp.395-403
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• 2020

This study presents a stable start-up strategy for v/f scalar-controlled permanent magnet synchronous motors (PMSMs). The v/f-controlled PMSMs easily lose synchronism under low-speed conditions if an insufficient stator voltage is applied to the machine due to errors in measured motor parameters and inverter nonlinearity, such as inverter dead time and on-state voltage drop. The proposed method adopts the I/f control method to ensure a stable start at low speeds and then switches to the v/f control method at medium speeds. A smooth transition method from I/f control to v/f control is proposed to minimize the oscillation of the stator current and rotor speed during transition. Moreover, the stability of the I/f and v/f control methods is analyzed using a small-signal model. Simulation and experimental results are provided to verify the performance of the proposed control strategy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.271-275
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• 2004

A fast switching thyristor with a superior trade-off property between the on-state voltage drop and the turn-off time could be fabricated by the proton irradiation method. After fabricating symmetric thyristor dies with a voltage rating of 1,600V from $350{\mu}m$ thickness of $60{\Omega}cm$ NTD-Si wafer and $200{\mu}m$ width of N-base drift layer, the local carrier lifetime control by the proton irradiation was performed with help of the HI-13 tandem accelerator in China. The thyristor samples irradiated with 4.7MeV proton beam showed a superior trade-off relationship of $V_{TM}=1.55V\;and\;t_q=15{\mu}s$ attributed to a very narrow layer of short carrier lifetime(${\sim}1{\mu}s$) in the middle of its N-base drift region. To explain the small increase of $V_{TM}$, we will introduce the effect of carrier compensation by the diffusion current at the low carrier lifetime region.

• 전기전자학회논문지
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• 제12권4호
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• pp.255-262
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• 2008

본 논문에서는 기존 IGBT의 구조적 한계로 인한 순방향 전압강하와 스위칭 손실간의 트레이드-오프 관계를 극복하고, 좀 더 우수한 전기적 특성을 갖는 새로운 구조의 nMOS 삽입형 IGBT를 제안하였다. 제안된 구조는 IGBT소자의 셀(Cell)과 셀 사이에 존재하는 폴리(poly) 게이트 영역에 nMOS를 형성시킨 구조로 N-드리프트 층으로의 전자, 정공의 주입효율을 증가시켜 기존 구조보다 더 낮은 온-저항과 빠른 스위칭 손실을 얻도록 설계된 구조이다. 시뮬레이션 결과 제안된 구조의 단일 소자인 경우 순방향 전압강하와 스위칭 특성은 각각 2.65V와 4.5us로, 기존 구조가 갖는 3.33V와 5us비해 약 26%의 감소된 순방향 전압강하와 10%의 낮은 스위칭 특성을 보였으며 래치-업 특성은 773A/$cm^2$로 기존 520A/$cm^2$보다 33%의 상승된 특성을 보였다.

• 전기전자학회논문지
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• 제14권1호
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• pp.55-64
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• 2010

본 논문에서는 기존 TIGBT의 구조적 한계로 인한 순방향 전압강하와 스위칭 손실간의 트레이드-오프 관계를 극복하고, 좀 더 우수한 전기적 특성을 갖는 새로운 구조의 pMOS 삽입형 트렌치 TIGBT를 제안하였다. 제안된 구조는 TIGBT소자의 셀(Cell)과 셀 사이에 존재하는 폴리(poly) 게이트 영역에 pMOS를 형성시킨 구조로 n-드리프트 층으로의 전자, 정공의 주입효율을 증가시켜 기존 구조보다 더 낮은 온-저항과 빠른 스위칭 손실을 얻도록 설계된 구조이다. 시뮬레이션 결과 제안된 구조의 단일 소자인 경우 순방향 전압강하와 스위칭 특성은 각각 1.67V와 3.1us로, 기존 구조가 갖는 2.25V와 3.4us비해 각각 약 25%의 감소된 순방향 전압강하와 약 9% 감소된 스위칭 특성을 보였다.