• 전자공학회논문지 IE
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• 제43권2호
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• pp.1-6
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• 2006

Two-wavelength에 의한 백색 유기발광소자를 청색계열의 발광재료 DPVBi와 오렌지계열의 발광재료 Rubrene 물질을 사용하여 제작하였다. 소자의 구조는 glass/ITO/TPD$(225{\AA})$/DPVBi/Rubrene/BCP$(210{\AA})/Alq_3(225{\AA})/Al(1000{\AA})$로 하였다. 청색 발광층인 DPVBi와 오렌지색 발광층인 Rubrene층의 두께비율를 변화시켜 가면서 백색광을 구현하였다. 청색발광재료 DPVBi층의 두께가 210${\AA}$ 이고 오렌지색 발광재료의 Rubrene 층의 두께가 180${\AA}$일 때 구동전압 15V에서 $1000cd/m^2$ 휘도와 (0.29, 0.33)의 CIE 색좌표값을 갖는 백색광을 얻었다.

• 공업화학
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• 제22권6호
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• pp.594-598
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• 2011

본 연구는 유기발광 디바이스용(Organic Light Emitting Device, OLED) 녹색 발광재료인 3-크로몬알데히드 유도체의 합성에 관한 것으로서, 유도체들은 탈수 축합반응으로 합성되었다. 이들은 전자흡인성의 3-크로몬알데히드류와 전자공여성의 디아민류의 공액구조를 가지고 있다. 합성한 물질들은 각각 FT-IR, $^1H-NMR$ 스펙트럼으로부터 그의 구조적 특성을 확인하였고, 융점, 수득률 등을 통하여 열적 안정성, 반응성들을 확인하였으며, 여기스펙트럼과 발광스펙트럼으로부터 자외가시광과 발광특성을 확인하였다.

• 한국전기전자재료학회논문지
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• 제24권8호
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• pp.678-681
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• 2011

We have investigated the effect of organic thin film on the driving voltage of OLED (organic light emitting diode) by inserting a 5 nm thick 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) or triphenylphosphineoxide ($Ph_3PO$) between tris-(8-hydroxyquinoline)aluminum ($Alq_3$) electron transport layer and 4,4'-bis(2,2'-diphyenylvinyl)-1,1'-biphenyl (DPVBi) emission layer. The device with 5 nm thick $Ph_3PO$ layer exhibited higher maximum current efficiency and lower driving voltage than the device with BCP layer, resulting from better electron injection from $Alq_3$ to DPVBi in the device with $Ph_3PO$ layer.

• 반도체디스플레이기술학회지
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• 제21권1호
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• pp.91-94
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• 2022

Top emission organic light-emitting diode is commonly used because of high efficiency and good color purity than bottom - emission organic light-emitting device. Unlike BEOLED, TEOLED contain semi-transparent metal cathode. Because of semi-transparent cathode, micro cavity effect occurs in TEOLED. We optimized this effect by changing the thickness of hole injection layer. Device consists of is indium-tin-oxide / N,N'-Di-[(1-naphthyl)-N,N'-diphenyl]-1,1'-biphenyl-4,4'-diamine (x nm) / tris-(8-hydroxyquinoline) aluminum (50nm) / LiF(0.5nm) / Mg:Ag (1:9), and we changed NPB thickness which is used as HTL in our device in order to study how micro cavity effects are changed by optical path. As the results, NPB thickness at 35nm showed the current efficiency of 8.55Cd/A.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1002-1006
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• 2004

The studies on OLED(Organic Light-Emitting Diode) materials and structures have been researched in other to improve luminescence efficiency of OLED. Electrons and holes are injected into the devices, transported across the layer and recombine to form excitons, their profiles are sensitive to mobility velocity of electrons and holes. A suggested means of improving the efficiency of LEDs would be to balance the injection of electrons and holes into light emission layer of the device. In this paper, we demonstrate the difference of velocity between hole and electron by experiments, and compare with a data of simulation and experiment changing hole carrier transport layer thickness, so we get the optimal we improve luminescence efficiency. We improve understanding of the various luminescence efficiency through experiments and numerical analysis of luminescence efficiency in the hole carrier transport layer's thicknes.

• 한국전기전자재료학회논문지
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• 제23권8호
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• pp.638-644
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• 2010

We have carry out numerical simulation of the electric-optical characteristics of organic light emitting diodes with gradient-doped emitting layer which were reported to be effective in improving luminous efficiency and lifetime. In this paper, the basic structure is comprised of ITO/NPB/$Alq_3$:C545T[%]/$Alq_3$/LiF/Al, six devices by separating the emitting layer of $Alq_3$:C545T[%] were studied. As the result, the uniformly-doped devices exhibited superior luminous efficiency-current density characteristics over conventional undoped device. In the case of gradient-doped devices, electric-optical characteristics were improved similar to uniformed-doped devices, unusually the distribution of traped-charge density in the OLED devices was shown as the staircase.

• 한국전기전자재료학회논문지
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• 제22권10호
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• pp.850-853
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• 2009

We have optimized the device structure by using the dielectric layer such as anti-reflection thin film to improve the emitting efficiency of white organic light emitting device (WOLED). Basically, dielectric layer with anti-reflection characteristics can enhance the emitting efficiency of WOLED by compensating the refractive index of organic layer, ITO, and Glass. Here, WOLED was designed and optimized by Macleod simulator. The refractive index of 1.74 was calculated for Dielectric layer and was selected as $TiO_2$. The optimal thicknesses of $TiO_2$ and ITO were 119.3 and 166.6 nm, respectively, at the wavelength of 600 nm. The transmittance of ITO was measured with the thickness variation of dielectric layer and ITO in Organic layer/ITO/Dielectric layer structure. The transmittance of ITO was 95.17% and thicknesses of $TiO_2$ and ITO were 119.3 and 166.6 nm, respectively. This result, calculated and measured values were coincided.

• 한국전기전자재료학회논문지
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• 제23권2호
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• pp.143-147
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• 2010

We have fabricated simple triple-layer blue-emitting phosphorescent organic light emitting diodes (OLEDs) using different thicknesses of N,N'-dicarbazolyl-3,5-benzene (mCP) host layers doped with bis[(4,6-di-fluorophenyl)-pyridinate-N,$C^{2'}$]picolmate (FIrpic) guest materials. The thicknesses of mCP:FIrpic layers were 5, 10, and 30 nm. Driving voltage, current and power efficiencies were investigated. The current efficiency was higher in the 10 nm thick mCP:FIrpic device, resulting from the better electron-hole balance. The device with 10 nm mCP:FIrpic layer exhibited the maximum current efficiency of 22.5 cd/A and power efficiency of 7.4 lm/W at a luminance of 1000 cd/$m^2$.

• 반도체디스플레이기술학회지
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• 제22권1호
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• pp.23-27
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• 2023

Organic light-emitting diode(OLED) is very thin organic films which are hundreds of nanometers. Unlike bottom-emission OLED(BEOLED), top-emission OLED(TEOLED) emits light out the front, opaque moisture absorbents or metal foils can't be used to prevent moisture and oxygen. And it is difficult to have flexible characteristics with glass encapsulation, so thin film encapsulation which can compensate for those two disadvantages is mainly used. In this study, Al₂O₃ thin films by atomic layer deposition(ALD) were examined by changing the argon gas purge flow rate and we applied this Al₂O₃ thin films to the encapsulation of TEOLED. Ag / ITO / N,N'-Di-[(1-naphthyl)-N,N'-diphenyl]-1,1'-biphenyl-4,4'-diamine / tris-(8-hydroxyquinoline) aluminum/ LiF / Mg:Ag (1:9) were used to fabricate OLED device. The characteristics such as brightness, current density, and power efficiency are compared. And it was confirmed that with a thickness of 40 nm Al₂O₃ thin film encapsulation process did not affect OLED properties. And it was enough to maintain a proper OLED operation for about 9 hours.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.449-452
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• 2009

Ink-jet printed (IJP) self-aligned (SA) organic light emitting diodes (OLEDs) and its application to light emitting seal have investigated. Ink-jet printing of light emitting material is carried out onto transparent anode covered with insulating material. Laminated light emitting seal with SA IJP OLED without photo - lithographic process and any vacuum process, noncontact type electromagnetic power supply without electric power supply line, and light emitting tag with network type RF communication terminal by controlling display information were demonstrated.