• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1050-1055
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• 2005

We report the development frontiers that are dictating the speed of adoption of polymer organic light emitting diode (P-OLED) technology in market applications. Our presentation includes both the developments taking place in materials and the rapid advances in the manufacturing processes used for solution processable P OLEDs. On the manufacturing side, the latest progress in ink jet printing process is discussed. On the materials side, we look at both fluorescent and phosphorescent material performance including the CDT development roadmap.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1355-1360
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• 2005

We report the development frontiers that are dictating the speed of adoption of polymer organic light emitting diode (P-OLED) technology in market applications. Our presentation includes both the developments taking place in materials and the rapid advances in the manufacturing processes used for solution processable P-OLEDs. On the manufacturing side, the latest progress in ink jet printing process is discussed. On the materials side, we look at both fluorescent and phosphorescent material performance including the CDT development roadmap.

• Journal of Information Display
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• v.11 no.4
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• pp.160-164
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• 2010

Organic light-emitting devices (OLEDs) have shown superior characteristics and are expected to dominate the nextgeneration flat-panel displays. Active-matrix organic light-emitting diode (AMOLED) displays, however, have stringent demands on the performance of the backplane. In this paper, the development of thin-film transistors (TFTs) based on indium gallium zinc oxide (IGZO) on both Gen 1 and 6 glasses, and their decent characteristics, which meet the AMOLED requirements, are shown. Further, several display prototypes (e.g., 2.4" AMOLED, 2.4" transparent AMOLED, and 32" AMLCD) using IGZO TFTs are demonstrated to confirm that they can indeed be strong candidates for the next-generation TFT technology not only of AMOLED but also of AMLCD (active-matrix liquid crystal display).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.81-85
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• 2009

We has been analysed optical properties of OLED(organic light emitting diode) and characteristics of ITO(Indium Tin Oxide) in terms of $O_2$ plasma treatment for manufacturing high efficiency OLED, RF power of $O_2$ plasma was changed 25, 50, 100, 200 W. $O_2$ gas flow, gas pressure and treatment time were fixed. Sheet resistance and surface roughness of ITO were measured by Hall-effect measurement system and AFM, respectively. The ranges of sheet resistance and surface roughness were $5.5{\sim}6,06\;{\Omega}$ and $2.438{\sim}3.506\;nm$ changing of RF power, respectively, PM(Passive Matrix)OLED was fabricated with the structure of ITO(plasm treatment)/TPD($400\;{\AA}$)/$Alq_3(600\;{\AA})$/LiF($5\;{\AA}$)/Al($1200\;{\AA}$). Turn-on voltage of PMOLED was 7 V and luminance was $7,371\;cd/m^2$ at the RF power of 25 W, $O_2$ plasma treatment of ITO surface was result in lowering the operating voltage and improving luminance of PMOLED.

• Journal of the Semiconductor & Display Technology
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• v.21 no.1
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• pp.71-74
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• 2022

For the process simplification in the fabrication of organic light emitting diode(OLED), top emission OLED (TEOLED) was fabricated without lithium fluoride(LiF) used as an electron injection layer (EIL). After co-deposition of Mg and Ag with a different process conditions, a cathode material adjacent to EIL was optimized when Mg and Ag have a ratio of 1:9 considering sheet resistance and transmittance. From the energy band diagram of TEOLED, band gap difference between Trisaluminium (Alq3) and Mg:Ag cathode show the difference of 0.4 eV according to the usage of LiF The fabricated TEOLED without LiF showed the improvement of 5.2 % and 2.7 % in the luminance and the current density comparing that with LiF. The results show there is no significant difference in OLED characteristics regardless of LIF layer in the TEOLED structures.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.428-430
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• 2008

We demonstrated high power efficiency and long lifetime for organic light-emitting diode (OLED) using a new electron transport material (ETM-1). A power efficiency of the device with ETM-1 was improved compared to a standard device using tris(8-hydroxy-quinolinate)aluminum ($Alq_3$). Moreover, the lifetime was 4 times longer than the standard device.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.625-627
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• 2007

We demonstrated high power efficiency and long lifetime in organic light-emitting diode (OLED) using new electron transport materials (ETMs). Electroluminescent device with these ETMs showed lower driving voltage than that with $Alq_3$. The device lifetime with a new ETM was 2 times longer than that with $Alq_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1002-1006
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• 2004

The studies on OLED(Organic Light-Emitting Diode) materials and structures have been researched in other to improve luminescence efficiency of OLED. Electrons and holes are injected into the devices, transported across the layer and recombine to form excitons, their profiles are sensitive to mobility velocity of electrons and holes. A suggested means of improving the efficiency of LEDs would be to balance the injection of electrons and holes into light emission layer of the device. In this paper, we demonstrate the difference of velocity between hole and electron by experiments, and compare with a data of simulation and experiment changing hole carrier transport layer thickness, so we get the optimal we improve luminescence efficiency. We improve understanding of the various luminescence efficiency through experiments and numerical analysis of luminescence efficiency in the hole carrier transport layer's thicknes.

• Journal of Information Display
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• v.7 no.2
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• pp.26-30
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• 2006

Insertion of a thin lithium fluoride (TLF) layer between an emitting layer (EML) and an electron transporting layer has resumed in the developement of a highly efficient and bright organic light-emitting diode (OLED). Comparing with the performance of the device as a function of position with the TLF layer in tris-(8-hydroxyquinoline) aluminum $(Alq_{3})$, we propose the optimal position for the TLF layer in the stacked structure. The fabricated OLED shows a luminance efficiency of more than 20 cd/A, a power efficiency of 12 Im/W (at 20 mA/$cm^{2}$), and a luminance of more than 22 000 cd/$m^{2}$ (at 100 mA/$cm^{2}$), respectively. We suggest that the enhanced performance of the OLED is probably attributed to the improvement of carrier balance to achieve a high level of recombination efficiency in an EML.

• Applied Chemistry for Engineering
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• v.32 no.2
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• pp.214-218
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• 2021

We investigated the optimal stacked structure from the perspective of process architecture (PA) through emission spectrum analysis according to the wavelength of quantum dot (QD)-organic light-emitting diodes (OLED). We confirmed that the blue-light leakage through the QD can be minimized by increasing the QD filling density above a critical value in the red QD (R-QD) layer. In addition, when the thickness of red-color filter (R-CF) at the upper part of the R-QD increased to more than 3 ㎛, the leakage of blue light through the R-CF was effectively blocked, and a very sharp emission spectrum in the red wavelength band could be obtained. According to these outstanding results, we expect that the development of QD-OLED displays with very excellent color gamut can be possibly realized.